Aixtron SE reported that Korean electronics company, LG Innotek has chosen the AIX G5 WW (Warm-Wall) reactor to produce silicon carbide (SiC) epitaxial wafers. LG Innotek plans to use the device to fabricate mainly power devices for automotive and renewable energy applications. Aixtron configured LG Innotek’s system for 8×6-inch substrates. The system was delivered in the fourth quarter 2015.
The AIX G5 WW vapor phase epitaxy (VPE) system is based on Aixtron’s planetary reactor platform. Aixtron says that the G5 WW system features the largest batch capacity and highest throughput available. Aixtron designed the system to minimize production costs while maintaining excellent production quality.
Dr. Minseok Kang, Vice President of LG Innotek and the head leader of the Korea’s WPM (World Premier Material) national project for SiC materials development lead by LG Innotek, commented, “We see rising demand for SiC-based systems from major automotive manufacturers. Based on our long-term experience with Aixtron epitaxy systems, we believe that Aixtron’s G5 WW tool offers unique advantages such as high throughput and yield on 6-inch wafers. Furthermore, we can pre-qualify SiC epitaxial wafer samples using Aixtron’s SiC application lab and we appreciate the outstanding, dedicated SiC customer support package.”
“Our AIX G5 WW perfectly matches the industry requirements for high-volume production of SiC-based power electronic devices. We will provide full support to LG Innotek for the quick installation and SiC process qualification of the system,” stated Dr. Frank Wischmeyer, vice president Power Electronics at Aixtron.
LG Innotek is an international specialized materials and components manufacturer and an affiliate of LG Group. The company focuses on the core material and components for industries including Mobile, Automotive, Display, Semiconductor, IoT, and LED.