IQE Grows First 6" InSb Substrates

IQE plc of Cardiff, UK, this week presents a series of invited papers on recent key developments in advanced optoelectronic technologies at Photonics West in San Francisco. One of the papers announces the commercial growth and characterization of 6” diameter InSb substrates that are suitable for use in the fabrication of MWIR focal plane infrared detectors and infrared imaging applications.

In addition to the 150mm InSb announcement, IQE will present two invited papers by the Group’s infrared division: The first paper titled, “GaSb-based photodetectors covering short-wave to long-wave IR grown by molecular beam epitaxy”, covers the growth of barrier-type nBn detectors, grown on 4-inch GaSb or 6-inch GaAs. The second paper titled, “Multi-wafer growth of GaInAs photodetectors on 4″ InP by MOCVD for SWIR imaging applications “, details the growth of InP/GaInAs photodetectors on 4” InP using MOCVD.

Photonics West runs from 3 to 6 February at the Moscone Convention Center in San Francisco. It is expected to attract around 1,200 exhibitors and 19,000 visitors.