IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates

IQE of Cardiff, UK announced the launch of gallium nitride based, high
electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter
semi-insulating silicon carbide (SiC) substrates. The SiC substrates are
supplied by the WBG Materials subsidiary of II-VI Inc., a provider of
optoelectronic components.

IQE says that GaN power amplifiers offer superior power capability,
efficiency, bandwidth and linearity compared with silicon (Si) or gallium
arsenide (GaAs)-based technologies commonly used. IQE contends that GaN power
amplifiers also lower overall system costs. Additionally, the company says that
GaN-based low-noise amplifiers exhibit improved robustness, noise figure and
dynamic range when compared to incumbent solutions. According to IQE, GaN-based
transistors can operate at high temperatures, thus reducing system cost, size
and weight.

IQE says that the higher cost of epitaxial material grown on 100mm SiC
substrates has limited the commercial market penetration of GaN HEMTs. However,
IQE says that its 150mm products are compatible with LDMOS processing lines,
and its customers have demonstrated the use of LDMOS to fabricate GaN HEMTs.

Russ Wagner, VP of IQE wireless business unit said,“Scaling up to 150mm
wafer diameter is a critical milestone on the path to technological maturity
and wide market acceptance of GaN HEMTs on SiC.”
Wagner added,“We are
very pleased with the quality of substrates supplied by II-VI Inc. and look
forward to continuing our partnership as we execute volume production ramp and
expand IQE’s range of advanced high-power high-frequency transistor products
for defense and wireless infrastructure applications.”