Integra Technologies Inc. of El Segundo, California USA, introduced a pair of 135- and a 130-Watt gallium-nitride-on-silicon-carbide (GaN-on-SiC) RF and microwave transistors for S-band radar applications. The IGT2731M130 is a 50-Ohm matched high-power GaN high-electron-mobility-transistor (HEMT). It provides a minimum of 130 Watts of peak pulsed power. With a gain of 13.5 dB and a drain efficiency of 55 percent, it operates at pulse conditions of 300 microseconds at 10 percent duty cycle.
The IGT2731M130 operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz and serves as a depletion mode device. It demands a negative gate bias voltage and bias sequencing.
The IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz. The IGT3135M135 supplies up to 135 Watts of peak pulsed power. This transistor serves as a 50-Ohm matched high-power GaN HEMT transistor and a depletion-mode device that requires bias sequencing and a negative gate bias voltage.
Both Integra Technologies HEMTs Feature PL44A1 Package
Both HEMT transistors come in Integra’s package PL44A1 measuring 0.8 inches by 0.4 inches. Earless, the devices measure 0.4 inches wide and 0.4 inches long. Integra Technologies assembles them using chip and wire technology featuring gold metallization. Also, both units come in metal-based packages sealed with a ceramic-epoxy lid.