Infineon Technologies AG of Munich, Germany has launched the CoolSiC™ Schottky diode 650 V G6. The company designed this latest product in the CoolSiC diode family based upon the distinctive traits of the G5, offering reliability, quality, and improved efficiency. According to Infineon, the CoolSiC G6 diodes perfectly complement the firm’s 600 V and 650 V CoolMOS™ 7 families. These SiC Schottky diodes target current and future applications in PC and Server power, PV inverters, and Telecom equipment power.
CoolSiC Schottky diode 650 V G6 Offers New Layout and Cell Structure
The CoolSiC Schottky diode 650 V G6 features a new cell structure, a new layout, and a new proprietary Schottky metal system. This design results in an industry benchmark VF (1.25 V), and a Qc x VF figure of merit (FOM), which is 17 percent lower than the previous generation. In addition, the new G6 diode makes takes advantage of the SiC strengths of temperature independent switching behavior and no reverse recovery charge.
The device design offers improved efficiency over all load conditions along with raised system power density. This improved efficiency and increased power density translate reduced cooling requirements, enhanced system reliability, and extremely fast switching. Furthermore, Infineon boasts that the new device is the SiC diode generation with the best price performance.