At this year’s PCIM Europe trade fair in Nuremberg (June 5 to June 7) Infineon Technologies AG plans to present the first products of its automotive Silicon Carbide portfolio, the CoolSiC™ Schottky diode family. Infineon says that the CoolSiC™ Schottky diode family is now ready for current and future onboard charger (OBC) applications in hybrid and electric vehicles. Infineon designed the SiC Schottky Diodes to meet the high standards of the automotive industry about reliability, quality, and performance.
Infineon based the new product family on the company’s 5th generation Schottky Diode, which it further enhanced to meet the reliability demands of the automotive industry. Thanks to a new passivation layer design, Infineon claims that its 5th generation SiC Schottky Diode is the most robust automotive device available in terms of its resistance to humidity and corrosion.
SiC Schottky Diode Based on Thin Wafer Technology
Moreover, because Infineon based the SiC Schottky Diode on a 110µm thin wafer technology, it achieves one of the best figures of merit (Qc x Vf) in its category. A lower figure of merit suggests lower power losses and therefore a better electrical performance.
Compared to the traditional Silicon Rapid diode, the CoolSiC Automotive Schottky Diode can improve the efficiency of an OBC by one percentage point over every load condition. This efficiency translates to a potential reduction of 200kg of CO 2 emissions over the typical lifetime of an electric car, based on the German energy mix.
The new products use a standard 3-pinTO247 package, which Infineon says can easily be implemented in an OBC system and can optimally be combined with the company’s TRENCHSTOP™ IGBT and CoolMOS™ products. The company intends to make available the first CoolSiC Automotive Schottky Diodes in September 2018 in the 650V class.