The government of India has given initial approval for the Indian Institute of Science (IISc) to set up a $500 Million (RS 3,000-crore) GaN foundry, according to an Indian Express article. IISc proposed that the foundry will be developed at an existing facility the IISc’s Centre for Nano Science and Engineering (CeNSE). associate professor Srinivasan Raghavan will lead the foundry which intends to produce gallium nitride on silicon wafers.
GaN is a wide bandgap semiconductor that can operate at high temperatures and at high switching speeds with power flow superior to silicon.
Prime Minister Narendra Modi inaugurated the CeNSE facility at the IISc in 2015. The facility intends to form an ecosystem of GaN electronics development including materials, devices, and systems. CeNSE reports that it is already selling some of the GaN-based transistors it fabricated to researchers in India. The new commercial GaN foundry would help meet industry demand for GaN technology.
GaN semiconductors can be used for phased array radars including AESA radars that are fitted onto ultra-modern fighter jets.
Blue ray information storage systems and some high-power and high-speed electronics now also use GaN electronics.