IMEC, a leading European nanotechnology research company, has reportedly demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. According to the company headquartered in Leuven, Belgium, the growth process will allow the development of high-efficiency/high-power systems that go beyond silicon capabilities. The company used their new 150mm metal organic chemical vapor phase epitaxy (MOVPE) system to grow the high-quality aluminum gallium nitride (AlGaN) / gallium nitride (GaN) high-electron mobility transistors (HEMTs) on silicon. IMEC says it can now offer AlGaN/GaN epiwafer production for laboratories and partner companies.
The company says it uses an AlGaN buffer layer to overcome the high lattice mismatch and large difference in thermal expansion coefficient between Si and GaN. IMEC adds their proprietary in-situ Si3N4 passivation layer, resulting in what the company calls