IMEC Demonstrates Growth of GaN High-Electron Mobility Transistors on 150 mm Silicon

Presented at the 13th International Conference on Metal Organic Vapor Phase Epitaxy – Miyazaki, Japan

Leuven, Belgium — IMEC, Europe’s leading independent nanoelectronics and nanotechnology research institute, has demonstrated the growth of low-sheet-resistivity AlGaN/GaN high-electron mobility transistors (HEMTs) on 150mm silicon (Si) wafers. The process paves the way to low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits. The high-quality AlGaN and GaN layers were grown in IMEC