II‐VI Incorporated of Pittsburgh, Pennsylvania USA, reported that in collaboration with the University of South Florida (USF) the company achieved a key research milestone in developing thin-film diamond on silicon technology for 5G wireless communications.
Mobile communications service providers plan to enhance their high-speed broadband services with 5G wireless. This plan to go to the 5G wireless standard is driving the demand for devices with much higher bandwidth and power efficiency than existing technologies can achieve.
Diamond On Silicon Technology to Be Used for 5G Handsets
II-VI and USF completed the first phase of their collaborative research program, which started in June 2016. The program intends to develop a new technology platform using thin-film diamond on silicon that will enable next-generation high-speed electronic components for 5G wireless handsets.
Dr. Wen-Qing Xu, general manager of platform technology development and incubation, II-VI Incorporated commented,
“Our work with USF accelerates the development timelines and will enable us to be ready in time to serve the market for 5G wireless components.”
II-VI and USF joint research activities were partly funded by the Matching Grant Research Program (MGRP) from the Florida High Tech Corridor Council. Development activities included the design, modeling, fabrication, and characterization of prototype devices.
“Our research team at USF was able to leverage our area of expertise in micro-machined thin film diamond on silicon, to rapidly converge on a technical solution for II-VI,” said Dr. Jing Wang, Associate Professor, Department of Electrical Engineering, University of South Florida.
II-VI says that the new thin-film diamond on silicon technology will add to its portfolio of GaAs and SiC engineered materials for high-speed wireless applications.