II-VI Shows Off First 200mm SiC Substrate

II-VI Advanced Materials of Pittsburgh, Pennsylvania USA, recently exhibited the first 200mm diameter SiC wafer at the 2015 Compound Semiconductor Manufacturing Technology (CS MANTECH) conference in Scottsdale, Arizona. The company also showcased the wafer at the International SiC Power Electronics Applications Workshop (ISiCPEAW) in Stockholm, Sweden.

The development comes after years of work funded, in part, by the U.S. Air Force Research Laboratory (AFRL). The work focused on the scaling-up the manufacturing of the II-VI Advanced Physical Vapor Transport (APVT) SiC crystal growth technology. The project also developed a fabrication, polishing and cleaning processes and increased the diameter of SiC wafers from 3″ to 100mm, then to 150mm, and now to the first 200mm SiC substrates.

Dr. Thomas Anderson, General Manager of II-VI Advanced Materials said, “This achievement is a direct result of our consistent focus on providing the market with leading-edge quality substrates at the diameters required to enable more cost effective semiconductor device manufacturing.”

Dr. Anderson added, “Devices built on these substrates will be or are currently being utilized in a wide range of applications requiring high power density and system efficiency, such as electric vehicles, inverters for PV solar energy and other renewable energy installations.”