II-VI Inc. and Sumitomo Collaborate on GaN-on-SiC

II‐VI Incorporated,a compound semiconductor solution provider, reported that the company began a strategic collaboration with Sumitomo Electric Device Innovations, Inc., (SEDI) a subsidiary of Sumitomo Electric Industries, Ltd. The collaboration aims to establish a vertically integrated, 150 mm wafer fabrication platform for producing gallium nitride (GaN) on silicon carbide (SiC) HEMT devices for next generation wireless networks.

II-VI will provide its expertise in 150 mm compound semiconductor fabrication. SEDI’s will offer its GaN RF device technology.  Together the companies intend to parties to enhance 5G RF performance, as well as increase its scalability and cost competitiveness.


“II-VI has invested aggressively to establish a world-class 150 mm compound semiconductor manufacturing platform,” said Keiichi Imamura, Corporate Director, Sumitomo Electric Device Innovations, Inc. “Based on rapidly growing market opportunities, it was important to act now to evolve our long standing commercial relationship into a full strategic relationship. We will leverage II-VI’s manufacturing platform to achieve economies of scale to enable us to meet the upcoming global demand for gallium nitride on silicon carbide HEMT devices.”

“We are excited to collaborate with SEDI, the market leader in high-performance gallium nitride HEMT products for wireless communications. This collaboration establishes a differentiated, vertically integrated value chain solution that spans from substrates through RF modules,” said Dr. Chuck Mattera, president and CEO, II-VI Incorporated. “Coupling SEDI’s industry-leading HEMT device technology with our 150 mm manufacturing platform will accelerate both companies’ wide-bandgap RF product roadmaps, as well as secure a leading technology and market position for many years to come. To be ready for the mass production ramps, we are preparing a 150 mm semi-insulating substrate manufacturing platform and expanding our Warren, NJ Device fab to add these core technologies to our growing optoelectronic device fab capability.”


II-VI serves the markets for wide-bandgap materials from its facilities in Champaign, IL, and Pinebrook, NJ. II-VI expects the 150 mm production facility in Warren, NJ to be qualified for HEMT production in mid-calendar year 2020.