IDT and EPC to Collaborate on Integrating GaN and Silicon Technology

Integrated Device Technology, Inc. (IDT®) of San Jose, California reported that the company is collaborating with Efficient Power Conversion (EPC) to develop Gallium nitride (GaN)-based technology. The companies hope to integrate GaN and Silicon using a combination of EPC’s eGaN® technology with IDT solutions.

“GaN offers exciting opportunities to develop higher-performance, differentiated products for our customers,” said Sailesh Chittipeddi, vice president, Global Operations and chief technology officer at IDT. “EPC’s leadership in GaN-based power management technology made them the obvious choice to team with, and I look forward to exploring how GaN-based products—with all their inherent benefits—may be brought to market in the not-so-distant future.”

The companies plan to use GaN’s low capacitance and zero QRR coupled with the low inductance of GaN chip-scale packages for high efficiency at high frequency. IDT intends to combine this increase in efficiency its precise computation and system expertise to drive up power density for improving communications and computing infrastructures.
Another area that the collaboration hopes to advance is in wireless power transfer. The wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz. At this resonant frequency, GaN’s high-speed, low-loss switching capability can drive efficiency to the levels of wired solutions, according to the companies. EPC and IDT plan to combine their technology and expertise to develop a highly efficient and cost competitive solution for wireless power transfer.

The collaborative effort also intends to develop radio frequency products for the communications infrastructure market.