Hua Hong Semiconductor Limited of Hong Kong, a pure-play 200mm foundry, reports that it has concluded the Stage I of its R&D for the third-generation Super Junction MOSFET (SJNFET) process platform. The company plans to introduce its process platform to the market gradually during the first half of 2017.
Hua Hong Semiconductor says it was able to solve the difficulty of the deep trench etching and filling process, and it launched a unique trench SJNFET process platform. According to Hua Hong, its new process is the first SJNFET process platform in the industry.
After years of R & D efforts, the company has introduced the third generation of its SJNFET process platform. The new SJNFET process platform inherits the compactness of its predecessors and adds a new trench gate structure.
This new trench gate structure reduces the junction resistance and further downsizes the cell pitch.
The company also reduced on-resistance by more than 30% compared to the second-generation process.
For example, the on-resistance per unit of area (Rsp) of a third-generation SJNFET device is 1.2ohm.mm2. Overall, the third-generation process platform features lower on-resistance, smaller footprint and lower switching loss, and faster switching-speed, the firm claims.
SJNFETs can serve as core device in switched-mode power supplies (SMPS), motor drive, LED driver, new energy vehicle (NEV), and smart grid, and discrete power devices. Hua Hong cons tens that with lower power dissipation its Super Junction technology is ideal for high-power fast-charging and LED power supplies, as well as conventional PC and cloud server power sources.
Dr. Kong Weiran, executive vice president of Hua Hong Semiconductor, commented, “Introduction of the next-generation SJNFET process platform will further consolidate our leadership in the power discrete field. We will waste no time in commercializing the platform to cater to the customers’ demand for more competitive high-voltage power chip solutions.”