Canadian power semiconductor firm, GaN Systems, announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018. At poster sessions of the IEEE Energy Conversion Congress and Exposition (ECCE) 2018, experts at GaN Systems will present to-date developments, solutions, and discussions about GaN power electronics. The presentation topics will cover the array of products and customer and application demonstrations that the company plans to show at booth #312.
Paul Wiener, vice-president, strategic marketing for GaN Systems, commented, “We are especially excited to show GaN advancements and how it has become an important building block in power systems for today’s devices and in the future.”
GaN Systems will be exhibiting the latest products including 100W and 300W wireless power amplifiers and two high-electron-mobility transistor (HEMT) devices. The two HEMT devices are a 100 V, 120 A, 5 mΩ GaN E-HEMT, which boasts highest current and power efficient 100 V GaN power transistor and a 120 A, 650 V, 12 mΩ GaN E-HEMT, which the company claims to be the world’s highest current rated GaN power transistor. In addition, the company will showcase reference designs and evaluation kits that ease the design process.
GaN System to Provide Customer and Application Demonstrations
The company will also provide a broad range of customer and application demonstrations focused on industrial, automotive, and renewable energy applications. Additionally, GaN Systems experts will present two presentations in the poster session that explain best engineers practices to take advantage of GaN power transistors in designing improved power systems.
Ruoyu Hou, Juncheng Lu, and Di Chen will present their paper titled, “An Ultrafast Discrete Short-Circuit/Over-Current Protection Circuit for GaN HEMTs.” Also, Juncheng(Lu) Lu, Ruoyu Hou and Di Chen, will explain their paper titled, “Paralleled GaN HEMTs Loss Distribution Analysis for High-power Applications.”