GaN Systems Releases 120A, 650V GaN E-HEMT

GaN Systems of Ottawa, Ontario, Canada, made public the 120 A, 650 V GaN E-HEMT. The company will showcase this product at the upcoming Applied Power Electronics Conference & Exposition (APEC) in San Antonio, Texas on March 4-8, 2018 in Booth #1041.

Gan Systems’ 120 A, 650 V GaN E-HEMT increases the power density 500 kW power conversion systems such as very high power on-board chargers (OBC), automotive traction inverters, industrial motor drives, and large-scale energy storage systems. According to the company, the new GaN E-HEMT transistor, with twice the current capability of the company’s highest rated current part, lets customers double the power processing capabilities for the same volume.

GaN Systems 120 A, 650 V GaN E-HEMT

GaN E-HEMT Sells as Die for Creating Modules

The product (GS-065-120-1-D), which GaN Systems sells as a die to customers building modules, offers what the company claims to be the lowest RDS(on), highest current 650 V GaN HEMT in the power semiconductor industry. Customers can utilize this die product in half-bridge, full-bridge, and six-pack module topologies to create enhanced, high-power designs.

“This is the most pivotal GaN product on the market to be optimized for modules and is compatible with both embedded and traditional module technology,” stated Jim Witham, CEO of GaN Systems. “As an extension of our flagship product, it encompasses all the benefits of GaN technology and our approach to GaN power transistors – ease of use, high power density, and high efficiency – enabling power systems that are smaller in size and lower cost with unprecedented power levels.”