Fujitsu Limited and Fujitsu Laboratories Ltd. reported the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for W-band (75-110 GHz) transmissions. Fujitsu claims that this GaN HEMT PA achieved the world’s highest output density in the W-band of 4.5 watts per millimeter of gate width. The company also verified a 26% reduction in energy consumption compared to conventional technology.
Fujitsu expects that positioning this power amplifier between wireless communication systems in two locations will achieve communications of 10 gigabits per second (Gbit/s) over a distance of 10km.
A portion of this research was carried out with support from the Japan Ministry of Defense, through the Acquisition, Technology & Logistics Agency (ATLA) which established the Innovative Science and Technology Initiative for Security. Fujitsu is announcing details about this development at the 12th International Conference on Nitride Semiconductors (ICNS-12), in Strasbourg, France, from July 24 until July 28th.