Freescale Semiconductor of Seattle, Washington USA, has created a new business unit focused on RF power and RF microwave devices for the U.S. aerospace and defense (A&D) markets. Freescale will add new gallium nitride (GaN) RF transistor products to support the A&D market. The company also plans to leverage its more than 400 LDMOS RF power transistor and gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) products in the market.
The company says its Airfast™ LDMOS devices provide high linearity, broad instantaneous bandwidth and advanced plastic packaging in products that have been “ruggedized” for commercial applications.
According to Freescale, they can operate into extreme load mismatches (VSWR) greater than 65:1 and offer enhanced protection from electrostatic discharge (ESD). The company’s LDMOS devices span frequency ranges to more than 3 GHz with RF power outputs to 1250 W.
The company’s GaAs MMIC devices reportedly cover applications to over 5 GHz and include gain block amplifiers, power amplifiers (up to 4 W), and low-noise amplifiers with noise figures as low as 0.35 dB. Freescale’s first GaN RF power transistors are planned for availability in late 2013. Freescale says that new products purchased for use in A&D applications are planned for inclusion in its Longevity Program, with assured supply for 15 years.