Freescale Semiconductor introduced a 125 watt continuous wave (CW) GaN-on-SiC transistor. The new MMRF5014H transistor offers extended operational bandwidth, making it perfect for wideband amplifiers in scientific equipment and military communications products for U.S. defense including radar implementations, electronic warfare systems, and jammers.
The available reference circuit demonstrates 100 W CW power over 200-2500 MHz bandwidth with greater than 12 dB gain across the band. Freescale designed the transistor to deliver 58 percent efficiency and provide power levels over 125 W in narrower band applications. The company says that the device also delivers thermal performance of less than 1° C/W and offers extreme VSWR ruggedness of 20:1. Freescale says its new GaN product is the first of several to help customers push the performance envelope while addressing the stringent size, weight and power (SWaP) requirements of the defense and other markets.
“Radios today typically require multiple RF amplifiers to cover a wide frequency spectrum, but with the new MMRF5014H, only one is needed,” said Paul Hart, senior vice president and general manager of Freescale’s RF group. “Size, weight, and power upgrades are critical for our customers, and by replacing several amplifiers with a single device, the MMRF5014H helps across all three of these factors.”
The MMRF5014H is in Freescale’s Product Longevity Program along with other RF products in the company’s military portfolio.