An online resource site dedicated to the needs of the compound semiconductor industry, including news, jobs, reviews, analysis, education, technology primers, white papers and directories of companies, products and services. http://compoundsemi.com/ 2013-05-20T04:36:59+01:00 text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122905.html#top IQE of Cardiff, UK announced the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates. The SiC substrates are supplied by the WBG Materials subsidiary of II-VI Inc., a provider of optoelectronic components.</p> <p>IQE says that GaN power amplifiers offer superior power capability, efficiency, ...<br><br>Category: inframaterialsubstrate text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122906.html#top Skyworks Solutions, Inc. of Woburn, Massachusetts USA has introduced RF switching technology that is enabling early adopters to implement carrier aggregation solutions. Carrier aggregation allows mobile service providers to use utilizing two or more bands simultaneously instead of the single band method used currently to combine spectrum and increase data rate throughput for an enriched ...<br><br>Category: broadbandrf text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122909.html#top Transphorm Inc. based in Goleta, California USA, announced that Fumihide &ldquo;Humi&rdquo; Esaka will join Transphorm as its new CEO starting July 1, 2013. The company says that Esaka will play a pivotal role in its expansion in providing GaN-based power conversion in power supplies and adapters, motor drives, solar panels, and electric vehicles. Esaka ...<br><br>Category: highpower text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122907.html#top Excelitas Technologies’ Surface Mount 905 nm pulsed semiconductor laser is designed specifically for high volume applications such as laser therapy, range finders, safety light curtains and adaptive cruise control. Multi-cavity layers concentrate the emitting source size and create three emitting active areas. When operated at 30A, these areas produce 70W ...<br><br>Category: semilasersvcsels text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122908.html#top International Rectifier of El Segundo, California USA, reports that it has qualified and shipped gallium nitride-on-silicon power device components for a leading consumer electronics company’s home theater systems. The company says that this commercialization was made possible through the company’s high throughput, 150mm GaN-on-Si epitaxy along with subsequent device fabrication processes that are compatible with ...<br><br>Category: highpower text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122880.html#top IQE of Cardiff, UK, announced the launch of a new division, &lsquo;IQE Infrared&rsquo;. IQE Infrared will provide its customers with a complete &lsquo;one stop shop&rsquo; for infrared substrate and epitaxial wafer materials covering short to very long wavelength (SWIR to VLWIR) regimes. The new division launch is part of IQE&rsquo;s overall rebranding to enable ...<br><br>Category: infraservicecapital text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122879.html#top M/A-COM Technology Solutions Inc. of Lowell, Massachusetts USA, has introduced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on silicon carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain and ...<br><br>Category: highpower text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122882.html#top TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the production of gallium nitride (GaN) high electron mobility transistors (HEMTs) using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce semiconductor temperatures while maintaining high RF performance. TriQuint successfully transfered a semiconductor epitaxial overlay onto a synthetic diamond substrate. This provides high thermal conductivity and low thermal boundary resistance, ...<br><br>Category: inframaterialsubstrate text/html 2013-05-13T04:00:00+01:00 http://www.compoundsemi.com/ http://www.compoundsemi.com/documents/articles/news/122881.html#top CrystAl-N, a German maker of AlN crystals is shifting its production from 1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company says that its AlN substrates will boost the efficiency of ...<br><br>Category: inframaterialsubstrate