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        <title>Compound Semiconductors Online:  Infrastructure</title>
        <description>An online resource site dedicated to the needs of the compound semiconductor industry, including news, jobs, reviews, analysis, education, technology primers, white papers and directories of companies, products and services.</description>
        <link>http://compoundsemi.com/</link>
       <dc:date>2013-05-19T21:19:02+01:00</dc:date>
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        <dc:date>2013-05-13T04:00:00+01:00</dc:date>
        <dc:source>http://www.compoundsemi.com/</dc:source>
        <title>IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates</title>
        <link>http://www.compoundsemi.com/documents/articles/news/122905.html#top</link>
        <description>IQE of Cardiff, UK announced the launch of gallium nitride based, high
electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter
semi-insulating silicon carbide (SiC) substrates. The SiC substrates are
supplied by the WBG Materials subsidiary of II-VI Inc., a provider of
optoelectronic components.&lt;/p&gt;

&lt;p&gt;IQE says that GaN power amplifiers offer superior power capability,
efficiency, ...&lt;br&gt;&lt;br&gt;Category: inframaterialsubstrate</description>
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        <dc:date>2013-05-13T04:00:00+01:00</dc:date>
        <dc:source>http://www.compoundsemi.com/</dc:source>
        <title>IQE Launches New, Dedicated Infrared Products Division</title>
        <link>http://www.compoundsemi.com/documents/articles/news/122880.html#top</link>
        <description>IQE of Cardiff, UK, announced the launch of a new division, &amp;lsquo;IQE
Infrared&amp;rsquo;. IQE Infrared will provide its customers with a complete
&amp;lsquo;one stop shop&amp;rsquo; for infrared substrate and epitaxial wafer
materials covering short to very long wavelength (SWIR to VLWIR) regimes. The
new division launch is part of IQE&amp;rsquo;s overall rebranding to enable ...&lt;br&gt;&lt;br&gt;Category: infraservicecapital</description>
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        <dc:date>2013-05-13T04:00:00+01:00</dc:date>
        <dc:source>http://www.compoundsemi.com/</dc:source>
        <title>TriQuint Produces GaN HEMTs Using GaN-on-Diamond Wafers</title>
        <link>http://www.compoundsemi.com/documents/articles/news/122882.html#top</link>
        <description>TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the
production of gallium nitride (GaN) high electron mobility transistors (HEMTs)
using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce
semiconductor temperatures while maintaining high RF performance. TriQuint
successfully transfered a semiconductor epitaxial overlay onto a synthetic
diamond substrate. This provides high thermal conductivity and low thermal
boundary resistance, ...&lt;br&gt;&lt;br&gt;Category: inframaterialsubstrate</description>
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        <dc:date>2013-05-13T04:00:00+01:00</dc:date>
        <dc:source>http://www.compoundsemi.com/</dc:source>
        <title>CrystAl-N Launches 2-Inch Bulk AlN</title>
        <link>http://www.compoundsemi.com/documents/articles/news/122881.html#top</link>
        <description>CrystAl-N, a German maker of AlN crystals is shifting its production from
1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company
says that its AlN substrates will boost the efficiency of ...&lt;br&gt;&lt;br&gt;Category: inframaterialsubstrate</description>
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