According to Epistar, the initial phases of the technology transfer project was already concluded successfully. The technology transfer brings together ALLOS’ 150 mm and 200 mm GaN-on-Si epi-wafer process with the excellent homogeneities of Epistar’s epitaxy reactors. Epistar says that with the technology it will be able to produce GaN-on-Si LEDs or power semiconductors. The use of GaN-on-Si epi-wafers enables epi-wafer processing at silicon foundries.
“Gaining full capability via a technology transfer in a very short period is a time and cost effective way to move ahead.” said Dr. M. J. Jou, president of Epistar Corporation. “GaN-on-Si remains interesting for Epistar as there are advantages in a number of applications and the cost benefits of larger wafer sizes,” Dr. Jou later added.
“Our combined licensing and technology transfer packages allow customers in both the LED and power semiconductor industry to kick-start their own GaN-on-Si programs successfully. This lets them achieve state-of-the-art results in months instead of trying to catch-up with the pioneers who are years and multi-million dollars of development spending ahead,” noted Dr. Atsushi Nishikawa, CTO and co-founder of ALLOS.