Aixtron SE announced that EpiGaN ordered an AIX G5+ C MOCVD system to boost its production capacity of large diameter GaN-on-Si and GaN-on-SiC epiwafers.
Belgian company EpiGaN concentrates on GaN-on-Si as well as GaN-on-SiC material product solutions for telecom, power electronics, and sensor applications. The company intends to install the new Aixtron AIX G5+ C reactor and bring it into operation in Q1/2019 at its manufacturing site in Hasselt/Belgium.
With the new Aixtron AIX G5+ C MOCVD system, EpiGaN expects to quickly scale up production and bring its differentiating technology solutions to the global market.
System Features Cassette-to-Cassette Wafer Transfer Module
The fully automated Planetary® MOCVD system features a cassette-to-cassette wafer transfer module that enables configurations of 8×6 inch or 5×8 inch epitaxial wafers to be automatically loaded and removed. The system also offers in-situ chamber cleaning.
EpiGaN to Increase Capacity for 150mm and 200mm Product Solutions
“With Aixtron’s AIX G5+ C Planetary® system, EpiGaN will increase its capacity for 150mm and 200mm product solutions to scope the increasing market demand,” said EpiGaN co-founder and CEO Dr. Marianne Germain. “Aixtron’s Planetary® system combines excellent on-wafer uniformity and run-to-run performance at the lowest cost of ownership – attributes that are critical to serve our customer base with products of exceptional performance and at the right price point.“
Dr. Felix Grawert, President of Aixtron, commented, “We are confident the AIX G5+ C will support EpiGaN’s demanding requirements for high-quality, cost-effective production of GaN epitaxial wafers as our tool meets the highest standards in terms of uniformity and particle density.”
Just recently EpiGaN has released large-diameter versions of its GaN-on-Si-based HVRF (High Voltage Radio Frequency, as well as its GaN-on-SiC wafer product families tailored towards 5G application requirements.