EPC Releases GaN Phase Nine Reliability Report

Efficient Power Conversion (EPC) of El Segundo, California USA has released its GaN Phase Nine Reliability Report. The report documents the results of a rigorous set of thermo-mechanical board level reliability testing. The new report adds to the growing knowledge base EPC previously published in its first eight reports.

According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration of the reliability of new technology is a major undertaking and one that EPC takes very seriously. The test results described in this ninth reliability report show that EPC gallium nitride products in wafer level chip-scale packages have the superior reliability, cost, and performance to displace silicon as the technology of choice for semiconductors. The time has come to finally ditch the package.”  

EPC FETs and ICs come in wafer level chip-scale packages (WLCSP), which the company claims improves performance, lowers cost, and minimizes footprint, while also improving reliability. According to EPC, wafer level chip-scale packages offer excellent thermal dissipation, which is critical for devices are soldered to printed circuit boards in end-use applications. The main portion of the report covers thermo-mechanical board level reliability.

The company chose devices for this Phase Nine Reliability Report that span package size and have various solder layout configurations. EPC developed a predictive model for solder joint integrity, and customers can now apply this thermo-mechanical stress model in the report to predict the reliability of specific end-use applications. The predictive model uses the correlation between strain at the solder joint along with fatigue lifetime to forecast thermal cycles to failure under arbitrary stress conditions of specific end-use applications.

EPC contends that given this reported superior performance, cost, and reliability of its GaN products over silicon devices, designers should use chip-scale GaN technology FETs and ICs instead of packaged silicon devices.