Efficient Power Conversion (EPC) Introduces Extremely Fast, Small Monolithic Gallium Nitride Power Transistor Half Bridge Operating Over 2 MHz, Ideal for Class-D Audio

EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio.

El Segundo, California USA–EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

The EPC2106 half-bridge component has a voltage rating of 100 V with a typical RDS(on) of 55 mΩ, output capacitance less than 600 pF, zero reverse recovery (QRR), and a maximum pulsed drain current of 18 A. The low on-resistance and capacitance of GaN enables high efficiency and significantly reduces distortion in Class-D systems. The EPC2106 comes in an extremely small 1.35 mm x 1.35 mm chip-scale package for improved switching speed and thermal performance for increased power density.

Hear the Difference GaN Makes

The low on-resistance and capacitance of GaN enables high efficiency and significantly reduces distortion in Class-D systems. To demonstrate, the EPC9106 Class-D audio amplifier reference design uses high frequency switching gallium nitride power transistors in the power stage providing precise high-power reproduction of the Class-D audio signal. The system demonstrates high efficiency, size reduction and eliminates the need for a heat sink while delivering prosumer quality sound. Listen to a demonstration of a GaN-based Class-D audio system at http://youtu.be/AokgH9AO9eA?t=22m3s

Development Board Reduce Time to Market

The EPC9055 is 2” x 1.5” and contains one EPC2106 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and has been laid out for optimal switching performance allowing designers to quickly evaluate the advantages that GaN can bring to their systems.

Price and Availability

The EPC2106 monolithic half-bridge price for 1K units is $0.81 each

The EPC9055 development boards are priced at $137.75 each

Products are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), andclass-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Contacts

Efficient Power Conversion
Joe Engle, 310-986-0350
joe.engle@epc-co.com