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NeoPhotonics Opens Sales and R&D Office in Moscow
CompoundSemi News Staff
May 20, 2013...NeoPhotonics Corporation announced the opening of a Sales and R&D office
in Moscow and servicing the Russian Federation and the broader eastern European
market.The company is a leading designer and manufacturer of photonic
integrated circuit, or PIC, based optoelectronic modules and subsystems for
bandwidth-intensive, high speed communications networks.
Tim Jenks, Chairman and CEO of NeoPhotonics commented, “Together
with our expanded sales force serving the region, this is the next step in our
local business development activities including a greater research presence and
the potential for production of advanced PIC-based solutions.”
Mellanox Agrees to Acquire Kotura
CompoundSemi News Staff
May 20, 2013...Mellanox® Technologies, Ltd. of Sunnyvale, California USA, a supplier of
interconnect solutions for servers and storage systems, has agreed to acquire
Kotura, Inc., a developer of silicon photonics for high-speed networking
applications. Mellanox and Kotura have signed a definitive agreement under
which Mellanox will acquire the privately owned Kotura at a total cash purchase
price of approximately $82 million subject to certain adjustments. The terms of
the transaction have been unanimously approved by both the Mellanox and Kotura
boards of directors.
Mellanox expects to establish its first R&D center in the United States
at Kotura’s current location. Further, Mellanox intends to retain
Kotura’s existing product lines to ensure continuity for customers and
Kotura reportedly has over 120 granted or pending patents in CMOS photonics
and packaging design, and successfully integrated multiple high speed active
and passive optical functions onto a silicon chip. Mellanox says that the
addition of Kotura’s technology will enable its interconnect products to
reach 100Gb/s and beyond bandwidth, and have longer reach optical connectivity
at a lower cost
Eyal Waldman, president, CEO and chairman of Mellanox Technologies stated,
“We expect that the proposed acquisition of Kotura’s technology
and the additional development team will better position us to produce 100Gb/s
and faster interconnect solutions with higher-density optical connectivity at a
lower cost. We welcome the great talent from Kotura and look forward to their
contribution to Mellanox’s continued growth.”
Bridgelux Closes Agreement and Expands Relationship with Toshiba to Drive GaN-on-Silicon Development
LiGHTimes News Staff
May 20, 2013...Bridgelux Inc., of Livermore California USA, a developer and manufacturer of
LED lighting technologies, has closed an agreement with Toshiba Corporation.
The agreement was originally announced on April 22, 2013 (See: Coverage),
and the companies have now completed the transfer of Bridgelux GaN-on-Silicon
technology assets to Toshiba.
The agreement includes an expanded licensing and manufacturing supply
relationship. Bridgelux says it will continue to develop and market its
GaN-on-Sapphire LED products as a fabless solid state lighting company. The
companies began their collaboration in early 2012, and later in 2012 Toshiba
became an investor in Bridgelux. As part of the previously announced agreement,
Toshiba hired Bridgelux’s GaN-on-Silicon development team. In turn,
Bridgelux reportedly retains a majority of its revenue generating operations as
a fabless LED company.
“We are thrilled to be moving into the next stage of our joint
work with Toshiba to advance GaN-on-Silicon-based solid state lighting
technologies,” said Brad Bullington, CEO of Bridgelux. “As
we outlined last month, Bridgelux will focus on commercializing, productizing
and bringing to market GaN-on-Silicon technologies alongside a proven global
scale semiconductor manufacturer. At the same time, we remain committed to our
GaN-on-Sapphire business and look forward to continuing to provide world-class
innovation and service to our customers.”
Bridgelux says it will continue developing GaN-on-Sapphire LED products which drive its operating revenue.
IQE and II-VI Inc. Launch 150mm GaN HEMT Epi Wafers on SiC Substrates
CompoundSemi News Staff
May 13, 2013...IQE of Cardiff, UK announced the launch of gallium nitride based, high
electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter
semi-insulating silicon carbide (SiC) substrates. The SiC substrates are
supplied by the WBG Materials subsidiary of II-VI Inc., a provider of
IQE says that GaN power amplifiers offer superior power capability,
efficiency, bandwidth and linearity compared with silicon (Si) or gallium
arsenide (GaAs)-based technologies commonly used. IQE contends that GaN power
amplifiers also lower overall system costs. Additionally, the company says that
GaN-based low-noise amplifiers exhibit improved robustness, noise figure and
dynamic range when compared to incumbent solutions. According to IQE, GaN-based
transistors can operate at high temperatures, thus reducing system cost, size
IQE says that the higher cost of epitaxial material grown on 100mm SiC
substrates has limited the commercial market penetration of GaN HEMTs. However,
IQE says that its 150mm products are compatible with LDMOS processing lines,
and its customers have demonstrated the use of LDMOS to fabricate GaN HEMTs.
Russ Wagner, VP of IQE wireless business unit said,"Scaling up to 150mm
wafer diameter is a critical milestone on the path to technological maturity
and wide market acceptance of GaN HEMTs on SiC." Wagner added,"We are
very pleased with the quality of substrates supplied by II-VI Inc. and look
forward to continuing our partnership as we execute volume production ramp and
expand IQE's range of advanced high-power high-frequency transistor products
for defense and wireless infrastructure applications."
Researchers Use Strain Engineering to Improve Green LED Light Output
LIGHTimes News Staff
May 8, 2013...Researchers from the Chinese Academy of Sciences’ Institute of
Semiconductors, Beijing, and University of Hong Kong have used strain
engineering to improve the light output of Green LEDs. The researchers improved
the light output of a 530nm green LED operating at 150 mA by 28.9 percent [Hongjian Li et al, Appl. Phys.
Express, vol6, p052102, 2013].
The researchers note that green-emitting nitride semiconductor LED
structures tend to suffer from low light output due to the difficulty in
producing the high-indium-content indium gallium nitride (InGaN) needed for
longer-wavelength light emission. In addition to the material quality
challenge, strain induced by the lattice mismatch with pure GaN leads to large
piezoelectric effects, giving electric fields that tend to pull electrons and
holes apart, reducing rates of recombination into photons (i.e. the
quantum-confined Stark effect, or QCSE), thus reducing quantum efficiency.
The Chinese team inserted a layer of lower-indium-content InGaN before the
high-In-content light-emitting layer. Simulations suggested that such a layer
could reduce the strain-dependent electric fields in the active light-emitting
multiple quantum well (MQW) structure.
MOCVD on C-plane sapphire was used to produce epitaxial material with a
low-In-content InGaN shallow quantum well (SQW) step. A 325nm helium-cadmium
laser was used to excite the photoluminescence spectra of the materials at low
temperature (85K) and room temperature (298K). One effect of the SQW was to
reduce the width of the spectral peak full-width at half maximum (FWHM) at 85K
from 16.7nm for the conventional LED material to 13.1nm for the SQW material.
The 298K measurement reduced the conventional FWHM of 20.1nm to 15.7nm. The
peak intensity was also higher with the SQW structure, therefore the SQW
material had improved crystal quality.
The peak height for the SQW material at 298K was 55.1% that at 85K. The
corresponding ratio for the conventional structure was 24.1%. The higher ratio
for the SQW material indicates a higher rate of radiative recombination and
higher internal quantum efficiency (IQE).
The electroluminescence was measured in an integrating sphere, giving light
output power–current–voltage (L–I–V) results. The
voltage performance is similar in the SQW and conventional devices. However,
the light output at 150mA is 28.9% greater in the SQW LED (49.3mW) over the
conventional device (38.4mW).
The researchers point out that improved overlap of the electron and hole
wavefunctions in the device leads to improved recombination into photons. The
external quantum efficiency (EQE) increased from 10.2–13.3% over the
conventional LED performance.
TriQuint Produces GaN HEMTs Using GaN-on-Diamond Wafers
CompoundSemi News Staff
May 6, 2013...TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, announced the
production of gallium nitride (GaN) high electron mobility transistors (HEMTs)
using GaN-on-diamond wafers. The GaN-on-diamond wafers substantially reduce
semiconductor temperatures while maintaining high RF performance. TriQuint
successfully transfered a semiconductor epitaxial overlay onto a synthetic
diamond substrate. This provides high thermal conductivity and low thermal
boundary resistance, while preserving critical GaN crystalline layers.
TriQuint demonstrated its new GaN-on-diamond, high electron mobility
transistors (HEMT) in conjunction with partners at the University of Bristol,
Group4 Labs and Lockheed Martin under the Defense Advanced Research Projects
Agency’s (DARPA) Near Junction Thermal Transport (NJTT) program. TriQuint
claims that its new technology enables RF amplifiers that are up to three times
smaller or up to three times the power of today’s GaN solutions.
NJTT focuses on device thermal resistance 'near the junction' of the
transistor. Thermal resistance inside device structures can be responsible for
more than 50% of normal operational temperature increases. TriQuint research
has shown that GaN RF devices can operate at a much higher power density and in
smaller sizes, through its highly effective thermal management techniques.
Operating temperature largely determines high performance semiconductor
reliability. It’s especially critical for GaN devices that are capable of
very high power densities.
James L. Klein, vice president and general manager for infrastructure and
defense products commented, “By increasing the thermal conductivity
and reducing device temperature, we are enabling new generations of GaN devices
that may be much smaller than today’s products. ”
CrystAl-N Launches 2-Inch Bulk AlN
CompoundSemi News Staff
May 6, 2013...CrystAl-N, a German maker of AlN crystals is shifting its production from
1-inch to 2-inch AlN and accepting pre-orders of the new material. CrystAl-N is accepting pre-orders now. The company was founded in 2010 as a spin-off of Friedrich-Alexander-University Erlangen-Nuremberg. The company
says that its AlN substrates will boost the efficiency of deep UV LEDs, lasers
and high-power, high-frequency devices as soon as its cost-performance ratio is competitive. Furthermore CrystAl-N says that shifting production to larger
substrates will help to improve cost performance ratio.
Company CTO Boris Epelbaum commented, "Further diameter increase in our
patented tungsten based furnaces is not limited as we are using SiC as initial
Wafer polishing drastically improved as well for the AlN substrates.
"The corresponding wafers feature surface roughness of less than 0.3 nm and
are highly UV transparent," said Octavian Filip, director of wafering.
IQE Launches New, Dedicated Infrared Products Division
CompoundSemi News Staff
May 6, 2013...IQE of Cardiff, UK, announced the launch of a new division, ‘IQE
Infrared’. IQE Infrared will provide its customers with a complete
‘one stop shop’ for infrared substrate and epitaxial wafer
materials covering short to very long wavelength (SWIR to VLWIR) regimes. The
new division launch is part of IQE’s overall rebranding to enable the
Group to enhance its customers' experiences in its key markets.
IQE is a leading supplier of substrates and epitaxial wafers for infrared
sensing applications ranging from night vision and thermal imaging devices to
energy conversion solutions for both military and consumer products. The new
IQE Infrared will focus on infrared detector materials based on gallium and
indium antimonide (GaSb and InSb) and indium phosphide (InP). Dr. Mark J.
Furlong, currently General Manager of IQE’s substrate divisions, will
head the new division which will offer products from across the IQE Group of
Dr. Mark J. Furlong, VP IQE Infrared, stated, “The opportunity to
establish a new business unit with an exclusive focus on infrared materials
will give IQE better opportunities to combine its substrate and epitaxial wafer
products for serving a broader range of customers and even broader range of
infrared device applications."
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