Tokuyama Installs Aixtron Epitaxy Reactor for Development of AlGaN UV LEDs
Source/Type: News - Staff reports

Author: CompoundSemi News Staff

October 2, 2007... Tokuyama Corporation of Japan, a company renowned for having the largest aluminum nitride plant, has purchased the Aixtron 200/4 RF-S epitaxy reactor for the development and production of aluminum gallium nitride (AlGaN)-based ultraviolet LEDs. Aixtron reported that Tokuyama Corporation successfully installed and started the machine at its research and development center in Tsukuba, Japan. Tokuyama reportedly one of the largest aluminum nitride plants in the world.

According to Aixtron, the AIX 200/4 RF-S reactor can provide the highest quality GaN and AlGaN layers due to its process stability and its ability to operate at up to 1400°C. Tokuyama collaborated with professor Aoyagi of Tokyo Institute of Technology to evaluate the system for this application. Aixtron indicated that the installation of another of its reactors will accelerate the development of gallium nitride UV LED materials and devices. Aixtron News Release

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