Ostendo & Oxford Instruments-TDI Now Offering Semi-Polar GaN Wafers for LED & LD Device Makers
Source/Type: News - Staff reports

Author: LIGHTimes News Staff

June 4, 2010... Ostendo Technologies of Carlsbad, California and Technologies and Devices International, Inc. (TDI) of Oxfordshire, UK., part of the Oxford Instruments Group, have announced the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo's proprietary design and TDI's proprietary Hydride Vapor Phase Epitaxy (HVPE) technology. Ostendo technologies produces Curved LED backlit displays.

This joint development now provides the opportunity to leading High Brightness HBLED and Laser Diode developers to increase optical efficiency significantly compared with structures grown on conventional c-plane GaN substrates. With TDI's HVPE technology the semi-polar GaN can be utilized in high brightness LEDs, laser diodes, and high electron mobility transistors (HEMTs).

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