EpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
Press Releases - As issued by company
July 18, 2012... Aachen, Germany/Hasselt, Belgium, July 17, 2012 – AIXTRON SE today announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers.
The reactors were installed and commissioned by AIXTRON Europe’s service support team at the company’s purpose-built, state-of-the-art facility located in Research Campus Hasselt, Belgium.
Dr. Marianne Germain, CEO of EpiGaN, comments: “EpiGaN is a spin-off of the world-renowned IMEC. After completing our funding round, we were ready to implement the strategic plan to establish our production capacities. After several years of efficient joint collaboration with AIXTRON towards GaN-on-Si, it was evident that these Close Coupled Showerhead systems from AIXTRON perfectly suit our needs. The EpiGaN team has worked with AIXTRON CCS MOCVD systems at IMEC and we have jointly published numerous papers on GaN-on-Silicon development. There are challenges ahead for high voltage 200 mm GaN-on-Si, but we are confident that the combination of our enduring expertise and the leading edge equipment and process technology from our partner AIXTRON will deliver all our objectives rapidly and efficiently.”
Dr. Frank Wischmeyer, Vice President and Program Manager Power Electronics at AIXTRON SE, adds: “We are very pleased to announce this new order from one of Europe’s newest and most promising start-ups. AIXTRON is pleased to partner with EpiGaN as they advance equipment, processes and materials for larger area GaN-on-Silicon wafers.”
Incorporated in 2010, EpiGaN is providing device manufacturers with access to a unique, proven technology addressing market segments such as power supplies for consumer electronics, hybrid electric vehicles, solar inverters, RF power for base stations, smart grid, etc. The company is also participating in the EU project HiPoSwitch which will develop more compact and more powerful energy converters.
EpiGaN was formed in 2010 as a spin-off of Leuven, Belgium, based, renowned research institution Imec. The company focuses on providing world-leading III-nitride epitaxial material wafer solutions to manufacturers of top-performance power-management and RF semiconductors. EpiGaN gives device manufacturers early access to a unique and proven power-management technology to be applied in key market segments such as power supplies for consumer electronics devices, renewable and clean-tech energy sources such as hybrid electric vehicles and solar power inverters, wireless RF base stations, and smart grid applications. EpiGaN has begun volume production of 8-inch GaN-on-Si wafers in Hasselt.
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