Cree Introduces S-Band GaN Device to Maximize Efficiency in Radar Applications
Press Releases - As issued by company
May 11, 2012... New 60W GaN HEMT Psat Transistor Reduces Size, Weight and Thermal Management Requirements for High-Power Amplifiers in Military and Civilian Radar Systems
DURHAM, NC --
Cree, Inc. (Nasdaq: CREE) announces the sample release of a high-efficiency unmatched GaN HEMT transistor for military and commercial S-Band radar applications. Rated at 60W for frequencies between 3.1 and 3.5GHz, this new S-Band GaN HEMT delivers superior drain efficiency (approaching 70 percent) when compared to conventional silicon or GaAs MESFET devices. Additionally, the combination of high efficiency and power density helps minimize thermal management requirements and allows for reduced size and weight in commercial radar systems.
“The introduction of the new Cree® S-Band GaN HEMT devices gives our customers a complete portfolio of superior S-Band GaN transistors and MMICs for use in high-power amplifier circuits for commercial radar applications,” said Jim Milligan, director, Cree RF and microwave. “Their high efficiency allows for extended pulse capability along with superior signal fidelity, which in turn minimizes the thermal management requirements, enabling RF design engineers to dramatically reduce the size and weight of radar systems while increasing their range and lowering installation costs.”
Designated the CGH35060, the unmatched GaN HEMT transistor features a rating of 60W pulsed power (at a pulse width of 100usec), a power gain of 12dB and a 65 percent drain efficiency at 28V operation (50 percent higher than typical silicon LDMOS devices). The CGH35060 GaN devices have been proven in high power amplifier reference designs at S-Band frequencies from 3.1 - 3.5GHz. Other performance characteristics include longer pulse and duty capability (<0.6dB) and superior signal fidelity with extremely low power droop compared with GaAs and Si technologies.
The new GaN HEMT transistors are complemented by Cree’s comprehensive S-Band product portfolio, including the CGH31240F/CGH35240F fully matched 240W GaN HEMT devices (2.7 – 2.9GHz / 3.1 – 3.5GHz) and the CMPA2735075F two-staged packaged GaN HEMT MMIC.
For additional information about the latest S-Band GaN devices, please visit Cree at the 2012 International Microwave Symposium, Booth 2125 or at www.cree.com.
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs and LED lighting solutions.
Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.
For additional product and company information, please refer to www.cree.com
This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of products; the risk that we may be unable to manufacture these new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; the risk that actual savings may vary from expectations; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2011, and subsequent filings.
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