ITC Approves Investigation of Patent Infringement Complaint Against 34 Companies
CompoundSemi News StaffMarch 24, 2008...On March 20, 2008, the U.S. International Trade Commission, as expected, has agreed to investigate the patent infringement claims in a complaint filed by Gertrude Neumark Rothschild of Hartsdale, New York on February 20. The complaint alleges that 34 separate big-name electronics manufacturers who produce products containing short-wavelength (e.g., blue, violet) LEDs and laser diodes such as hand-held mobile devices, instrument panels, billboards, traffic lights, HD DVD players (e.g., Blu-ray disc players), and data storage devices that infringe on a patent owned by a former Columbia University professor, Gertrude Neumark Rothschild.
The complaint seeks an injunction against importation of the products, and financial damages. The list of companies being investigated for alleged infringement makes up most of the big players in the compound semiconductor industry, the makers of Blu-ray consumer products. It also includes many of the big companies that produce products with blue or violet LEDs. Noticeably absent from the list are the several companies that in the LED market that have already settled. Philips Lumileds, Toyoda Gosei, Nichia, and Osram have already settled the dispute. A patent infringement claim that alleges that Cree infringed the former professor’s patent is still pending.The Honorable Paul J. Luckern, an ITC administrative law judge will schedule and hold an evidentiary hearing. The ITC expect to complete the investigation in 45 days of the investigations start. ITC News Release with List of Companies
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U.S. Air Force Selects Ascent Solar for Phase II of Tandem Solar Cell Development Project
CompoundSemi News StaffMarch 24, 2008...The U.S. Air Force has selected Ascent Solar Technologies, Inc., of Littleton, Colorado USA to continue development of flexible thin-film copper indium gallium diselenide (CIGS) tandem solar cells. The goal of the second phase of the continuing project is to achieve photovoltaic conversion efficiencies of 20 percent. A tandem solar cell is two cells stacked atop one another. The top and bottom cells gather energy from separate parts of the solar spectrum. For optimum efficiency, tandem cells require two solar cells that have the desired electrical and optical properties and also share compatible manufacturing processes. The project is expected to be performed under the second phase of an Air Force Small Business Innovative Research contract. The company expects the contract value of the project to be about $750,000, pending negotiation.
Ascent Solar's Vice President and Chief Technology Officer, Dr. Joseph Armstrong stated, “This Phase II project follows our success in Phase I of the U.S. Air Force program, and builds upon work already performed by our scientists in the areas of wide bandgap and durable bottom cell thin-film photovoltaic technologies. Our objective in Phase II is to demonstrate an ability to make tandem solar cells using new material systems we developed during Phase I. We are delighted that the U.S. Air Force has selected Ascent Solar to continue work with these exciting thin-film photovoltaic technologies.” Company News Release Kyma Gets Sales Distributor for Japan
CompoundSemi News StaffMarch 24, 2008...New Metals and Chemicals Corporation, Ltd. (NMCC) reportedly signed an agreement with Kyma Technologies, a maker of ultra-pure crystalline gallium nitride (GaN) and aluminum nitride (AlN) products, to become its exclusive sales representative in Japan. Kyma says its products are used in the development of several new III-V nitride semiconductor devices, including visible and ultraviolet light emitting diodes (LEDs) and laser diodes, solar blind ultraviolet detectors, and advanced high power electronics. Kyma also notes that many development and manufacturing activities are already in progress in Japan for all of these device technologies, targeting a broad range of commercial applications.
"We are very pleased with this business alliance with Kyma Technologies and look forward to supporting the wide bandgap industries in Japan as they develop novel III-V nitride semiconductor devices using Kyma's leading-edge and quality materials," said Minoru Mito, General Manager of NMCC. Keith Evans, Kyma president and CEO, added, "The great sales support we receive from NMCC in Japan enables Kyma to focus on manufacturing in North Carolina. The end result is the improved ability to serve our customers."
Kyma News Release
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Nitronex Develops 45W GaN-on-Si RF Power Transistor
CompoundSemi News StaffMarch 24, 2008...Nitronex, a producer of gallium nitride-on-silicon (GaN-on-Si) RF power devices based in Durham, North Carolina USA, has developed a GaN high electron mobility transistor (HEMT) that delivers 45W at 28V for high peak-to-average (PAR) and pulsed applications. The device is manufactured using the company’s SiGaNtic NRF1 process. The NPT1004 has a broadband DC to 4 GHz high power density process, and it offers a cost effective thermally enhanced plastic package that is optimized for thermal load power applications.
“Feedback from early customers confirms that the NPT1004 is an excellent fit for high peak to average power amplifiers for WiMAX and pulsed waveforms found in radar, telemetry and medical applications,” said Chris Rauh, VP of Marketing and Sales at Nitronex. “We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base.”
The NPT1004 provides an average of 5W power for 2.5-2.5GHz WiMAX applications (single carrier OFDM 64-QAM ?, 10.3dB peak to average, 10MHz channel bandwidth) and 4.5W for 3.3-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ?, 10.3dB peak to average, and 3.5MHz channel bandwidth). Company News Release
NEC Develops Optical Interconnect Device for Future Supercomputer
CompoundSemi News StaffMarch 19, 2008...NEC Corp. of Tokyo and the Tokyo Institute of Technology have developed a prototype device to connect processing chips of a supercomputer, according to a Nikkeinet article. The device was specifically developed for optically interconnecting chips in the next-generation 10- petaflop (10 quadrillion floating point operations per second) supercomputer that the Japanese government hopes to build around 2010.
Supercomputers use a number of different interconnected processing chips to perform high speed calculations. However, the transfer of data over wires has been limited the speed in terms of how much data can be transfered. The article points out that it is difficult to transfer data any faster than 10Gb/s with electrical signals. NEC has developed an interconnect device that turns electrical signals into optical signals using laser diodes. The connecting reportedly is reportedly made with bundles of 1,000 fibers that transmit data between neighboring chips. Skyworks Ramps Production After RF Design Wins
CompoundSemi News StaffMarch 19, 2008...Skyworks Solutions, an RF solutions provider based in Woburn, Massachusetts USA, announced key design wins and production ramps for its growing line of power amplifiers (PAs), synthesizers, switches, and silicon voltage controlled oscillators (VCOs).
Skyworks' design wins in the industrial, scientific and medical (ISM) bands applications range from professional special mobile radio (SMR), radio frequency identification (RFID), automatic meter reading (AMR), and industrial control.
Skyworks points out that according to The Scott Report on AMR Deployments, only about 34 percent of about 300 million electric, gas, and water meters use a wireless application. Automatic meter reading significantly reduces meter reading costs. Furthermore, the Scott Report Indicates that outside of North America just six percent of the 2.5 billion meters utilize AMR solutions.
"Our Linear Products business continues to address new markets by
providing highly integrated and innovative semiconductor solutions to
solve real-world problems," said Stan Swearingen, Jr., vice president
and general manager of Linear Products at Skyworks. "With our
comprehensive RF solution set, Skyworks is setting the bar for
performance and footprint, while at the same time reducing the need
for extra components."Company News Release
Veeco's TurboDisc K465 GaN MOCVD Systems Accepted HB LED Makers in Asia
CompoundSemi News StaffMarch 19, 2008...Veeco reports that HB LED manufacturers located throughout Asia have accepted four of its TurboDisc K465 gallium nitride (GaN) metal organic chemical vapor deposition (MOCVD) systems to produce HB LEDs. The company’s TurboDisc K-Series MOCVD GaN platform, which includes the K300(TM) and K465 models, provides what the company contends is the industry’s highest throughput available today for high volume production of GaN-based blue and green LEDs and blue lasers.
Sam DiRenzo, Vice President, General Manager of Veeco's MOCVD Operations commented, "Veeco's K465 systems were qualified for production in a relatively short period of time, enabling our customers to ramp quickly. The speed of installing and qualifying an MOCVD system into production is critical as our customers continue to increase capacity of HB-LEDs for growing applications such as lighting, displays, automotive and backlighting for laptops." Company News Release U.S. Department of Energy to Invest up to $13.7 Million for 11 University-Led Projects
CompoundSemi News StaffMarch 17, 2008...The U.S. Department of Energy (DOE) said it will invest up to $13.7 million, over three years (fiscal years 2008 – 2010), for 11 university-led solar photovoltaic development projects. The projects will focus on developing advanced solar photovoltaic (PV) technology manufacturing processes and products as part of President Bush’s Solar America Initiative. The aim of President Bush’s solar initiative is to make solar energy cost-competitive with conventional forms of electricity by 2015. According to the DOE, its funding in addition to minimum university and industry cost share of 20%, add up to $17.4 million that will be invested in these projects.
“Harnessing the natural and abundant power of the sun and more cost-effectively converting it into energy has enormous potential to help reduce greenhouse gas emissions and provide greater stability in electricity costs,” DOE Assistant Secretary for Energy Efficiency and Renewable Energy, Alexander Karsner said. “These projects will not only bolster innovation in photovoltaic technology, but they will help meet the President’s goal of making clean and renewable solar power commercially viable by 2015.”
The DOE says that the projects have the potential of reducing the cost of electricity from PV from current levels of $0.18 - $0.24 per kWh to $0.05 - $0.10 per kWH. Arizona State University, California Institute of Technology, Georgia Institute of Technology, Massachusetts Institute of Technology, Penn State, University of Delaware, University of Florida, and University of Toledo will receive funding for their proposed solar PV development projects. DOE News Release RoseStreet Labs Energy Opens Full Spectrum Solar Cell Development Center
CompoundSemi News StaffMarch 17, 2008...RoseStreet Labs Energy, Inc. (RoseStreet), a developer of thin-film multi-junction solar cells for the flat panel and concentrator photovoltaic markets, announced the grand opening of its new solar cell development center in Phoenix, Arizona USA. RoseStreet Labs Energy, Inc. is a joint venture between RoseStreet Labs, LLC and Sumitomo Chemical Corporation of Tokyo, Japan. The photovoltaic development center includes a full spectrum photovoltaic pilot production line and a laboratory for solar cell packaging and interconnection.
RoseStreet reports that it collaborates locally with FlipChip International on packaging full spectrum photovoltaics. RoseStreet also indicated that Sumika Electronic Materials, Inc., a wholly owned subsidiary of Sumitomo Chemical Corp., will continue to provide support for the manufacturing and development of the full spectrum products. Bob Forcier, Chairman of RoseStreet Energy stated, "Our progress during our first year has been substantial and our momentum is building for the launch of both our thin film multiband and multijunction high efficiency solar cells." RoseStreet Labs Energy Inc. News Release Osram Opto Reports 10 Percent Higher Efficiency and Twice the Output for New Laser Bars
CompoundSemi News StaffMarch 17, 2008...Osram Opto Semiconductors reports that it has improved the performance perameters of its laser bars as part of the BRILASI research project. The “BRILASI” research project (Brilliant High-Power Laser Diodes for Industrial Applications, FKZ 13N8601) was initiated by the Germany Ministry for Education and Research. The company says that its new laser chips have improved efficiency, output power, lifetime, and beam quality. The company was also able to match them perfectly to each other. Some of the laser chips operate at a wavelength of 910 to 980 nm and achieve an optical output of 120 W under what the company says are “real industrial conditions.” Under these industrial conditions, the laser chips boast a typical efficiency of 70 percent. The fill factor of a bar, the ratio of active width to overall width, is 50 percent. The main applications of these laser bars include pumping of solid-state lasers and direct material processing.
The company said it will also produce laser chips with a a wavelength of 808 nm to 880 nm, a fill factor of 20 percent, and an efficiency of 62 percent at 120 W. Structures with a fill factor of 20 percent that operate at 910 nm to 980 nm wavelength with an output of 80 W complete the range of new more powerful components. Osram says that these lasers will be ideal for optical fiber coupling applications. “With this latest generation of laser bars we will be able to offer much more powerful components”, said Dr. Jörg Heerlein, Head of Product Marketing Lasers at Osram Opto Semiconductors. Company News Release IQE Wins Order for Gallium Nitride Based Wafer Products
CompoundSemi News StaffMarch 17, 2008...IQE plc, a maker of semiconductor wafers, has won an order from US semiconductor manufacturer TriQuint Semiconductor for IQE’s Gallium Nitride (GaN) wafer products. The order is reportedly IQE’s largest commercial order for GaN products to date. IQE says that the wafers will be manufactured at its New Jersey facility and the order is scheduled for delivery throughout 2008. According to TriQuint, it will use IQE’s GaN based HEMT (high electron mobility transistor) wafers to aid development of smaller, more durable, and highly efficient power amplifiers for new commercial and military communications products. The wafers will reportedly be used in TriQuint’s on-going research and in the development efforts and the roll-out of its new products this year.
IQE notes that GaN power amplifiers offer much higher power capability, efficiency, and greater protection against breakdown than existing solid-state amplifier technologies commonly used today. IQE says that they offer significant benefits in performance and lower overall system costs. Mr Alex Ceruzzi, VP and General Manager of IQE’s New Jersey facility commented, “This is a key order for us particularly as our broad product portfolio, which ranges from high volume HEMTs, HBTs and BiFETs to emerging technologies such as gallium nitride epitaxial wafers....”
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