TDI Makes InGaN Substrates Available CompoundSemi News StaffAugust 20, 2007...Technologies and Devices International, Inc. (TDI), a developer and supplier
of nitride semiconductor materials headquartered in Silverspring, Maryland USA, announced the availability of what the company
says are the world's first InGaN substrates. InGaN is used in the production
of GaN-based blue, green, white, and UV LEDs in addition to laser diodes. The
structural mismatch between InGaN epitaxial structures and the conventional
substrates they are on is known to greatly reduce performance. “Crystal
lattice and thermal match between the substrate and the overgrown InGaN device
has been predicted for a long time to reduce defects in the light emitting regions,
increase light emitting efficiency and device lifetime. With these substrates,
this is now possible," Alexander Syrkin, a senior crystal growth specialist
at the company said.
The substrates consist of an InGaN layer deposited on 2-inch GaN/sapphire template.
The InN content in the InGaN layers ranges from 5 to 20 mol. percent. Volume
production is expected to begin in early 2008. Vladimir Dmitriev, President
and CEO of TDI stated, "Since the first demonstration of high quality
InGaN materials grown by hydride vapor phase epitaxy (HVPE) in 2006, we have
been receiving continuous requests from our customers regarding these new products.
Today we are pleased to announce the expansion of our substrate materials offering
to include InGaN substrates. Support provided by the US Department of Energy
and Department of Defense for this product development is greatly appreciated.
We view this effort as one of the key components to enable advanced light emitting
devices, particularly for solid state lighting applications." Company
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August 20, 2007...Goodrich Corporation of Charlotte, North Carolina USA, was again selected by
the Defense Advanced Research Projects Agency (DARPA) Microsystems Technology
Office (MTO) to continue development of indium gallium arsenide (InGaAs), night
vision technology. Specifically the company will continue to develop visible
and shortwave infrared focal plane arrays for use in passive, night vision systems.
The company was first awarded the multiphase DARPA contract in September 2005.
(Ref: Coverage).
Goodrich’s SUI team (previously a company called Sensors Unlimited Inc.),
based in Princeton, New Jersey USA, developed the design and production methods
of shortwave infrared cameras and systems utilizing InGaAs imaging technology
for industrial, commercial, military, agricultural and scientific markets.
Edward Hart, Vice President and General Manager of Goodrich's SUI team, "Our
team has successfully completed the first phase of this contract and we now
look forward to taking the technology to the next level. We welcome the opportunity
to carry on this important initiative with DARPA and their innovative MTO group.
The focus of this next phase of development will be to raise the resolution
of the camera we developed in the first phase and make the imager more sensitive,
allowing for better night vision capabilities." Company
News Release GSM Power Amplifier Technology Declining Slower than Anticipated, ABI Research Says CompoundSemi News StaffAugust 20, 2007...ABI Research (ABI) has revealed that the demand for GSM and other 2G RF power
amplifiers has been shrinking. However, the use of higher efficiency power amplifier
designs has been increasing. “Though basic GSM is slowly declining,
EDGE has satisfied the data needs of many users to a greater extent than anticipated.
At the same time, many operators are becoming more wary of big 3G-related spending.
The result is that such GSM-based systems have enjoyed a longer life-cycle,
which in turn stretches out the growth period for 3G. That has a direct impact
on what happens in the power amplifier and devices market,” said
research director Lance Wilson.
The company said that Chinese vendors, led by Huawei Technologies and ZTE,
have become more active in the RF power amplifier market. In this way ABI says,
Chinese vendors are beginning to have an effect on the device market. ABI notes
that high-efficiency RF amplifiers for wireless infrastructure are beginning
to enter the mainstream. ABI predicts that these will be seen in increasing
quantities over the next five years. ABI points out that greater amplifier efficiency
translates to lower base station costs, in both initial price, and in lower
power consumption and operating cost. ABI
Research News Release Kyma Adds New Sizes to Native Semi-Insulating GaN Substrate Product Line CompoiundSemi News StaffAugust 15, 2007...Kyma Technologies Inc., a supplier of nitride materials, products, and services
located in Raleigh, North Carolina USA, reported the availability of its new
25mm x 25mm native semi-insulating GaN (SI GaN) substrates. The new substrates
add to the company’s portfolio of SI GaN substrates which also includes:
10mm x 10mm and 18mm x 18mm substrates.
Kyma’s expanded SI GaN product line has received strong financial support
from the US Air Force and US Missile Defense Agency (MDA) and from military
collaborations in SI GaN related materials and devices including working with
EOC, US Air Force Research Laboratory (AFRL), US Naval Research Laboratory (NRL),
and US Naval Surface Weapons Center (NSWC).
Dr. Edward Preble, Kyma’s Chief Operating Officer, commented, “Our
25mm x 25mm native SI GaN product has excellent resistivity properties just
like our smaller SI GaN substrates, as corroborated by recent electrical resistivity
mapping measurements carried out by Tim Bogart, one of our collaboration partners
at the Electro-Optics Center (EOC) of Penn State University. The larger size
and availability are the results of yield improvements in our native SI GaN
boule growth and wafering processes. We have also produced limited quantities
of 30mm x 30mm high quality native SI GaN substrates and plan to announce their
availability in the coming months.” Company
News Release JDSU Makes Diode Laser Available with Twice the Power and Highest Brightness CompoundSemi News StaffAugust 15, 2007...JDSU announced the general availability of its 2495-L3 Series 808 nanometer
(nm) fiber-coupled diode laser. According to JDSU, the diode laser incorporates
new chip technology that translates to a more reliable and less expensive laser
solution for many industrial, dental and medical applications. JDSU also pointed
out that the laser generates twice the power of previous offerings and provides
the highest level of 808 nm brightness among commercially available single-emitter
fiber coupled diode lasers.
"As the diode laser industry has matured, JDSU has leveraged its expertise
in the telecom space and applied it to the industrial sector, bringing higher
performance and lower cost diode laser solutions to the market," said
Alex Schoenfelder, vice president and general manager of JDSU's Integrated Photonics
business unit. "The 2495-L3 Series not only provides a more elegant
offering for high-precision laser applications, it also opens the door for JDSU
to participate in new markets."
JDSU indicated that the dental and medical fields have had growing demand for
the use of 808 nm diode lasers. For example, Japan has certified this wavelength
as the approved frequency for specific procedures. For soft tissue dental processes,
the 2495-L3 diode laser allows a dentist to more accurately treat diseased gum
tissue without disturbing surrounding healthy tissue. Company
News Release Kopin to Expand Production Facility CompoundSemi News StaffAugust 15, 2007...Kopin Corporation, a leading maker of micro displays for consumer and military
applications, announced plans to enlarge and increase the production capacity
of its Taunton, Massachusetts USA production facility. The company indicated
that the increased space and capacity are needed to keep up with demand for
micro displays and hetero junction bipolar transistors.
The company made the announcement during a ceremony at Kopin's world headquarters
in Taunton to recognize awarding of a new $3 million state development grant.
"The grant represents a partnership between Kopin and the Commonwealth
of Massachusetts to create jobs and maintain Massachusetts as a leader in high-tech
manufacturing," said Dr. John C.C. Fan, Kopin president and CEO. "This
grant is a continuation of our strategy which includes federal, state and Kopin
resources and revenues to develop leading-edge display products for use in consumer
and military applications.”
The company said that the grant will be used for the facility expansion including:
the construction of clean room facilities, infrastructure improvements, and
implementation of a job training program. Kopin said it expects to increase
the number of employees over the next five years and beyond. The company plans
to complete the expansion project later this year. Company
News Release RFMD and Sirenza Sign Definitive Merger AgreementAugust 13, 2007...As anticipated, RF Micro Devices (RFMD), and Sirenza Microdevices have signed a definitive merger agreement. The boards of both companies, RFMD, a dominant company in the realm of RF and wireless components and Sirenza, a supplier of RF components also, have approved the merger. Under the terms of the agreement, each outstanding share of Sirenza's common stock will be exchanged for a combination of 1.7848 shares of RFMD common stock and $5.56 in cash. Additionally, RFMD will assume outstanding options to purchase Sirenza stock, and these will be converted into options to purchase RFMD stock.
Based on RFMD's closing stock price on Friday, August 10, 2007, the last trading day prior to the announcement of the transaction, the consideration is valued at $16.64 per share. This represents a 17% premium over Sirenza's closing stock price on that date. As of that the value of the offer is approximately $900 million comprised of $300 million in cash with the balance in stock. The transaction structure is intended to allow all or a portion of the consideration receivable in RFMD stock to be tax-free to Sirenza stockholders. Upon completion of the merger and all of its terms, current RFMD and Sirenza stockholders will own approximately 67 percent and 33 percent, respectively, of the combined company on a fully diluted basis. The transaction is expected to be completed in RFMD's fiscal Q3, ending December 29, 2007. The transaction is subject to approval by the stockholders of both companies as well as regulatory approval. Company News Release Microsemi and SemiSouth to Collaborate on SiC Material and Device Fabrication CompoundSemi News StaffAugust 13, 2007...Microsemi Corporation of Irvine, California USA, a manufacturer of high performance
analog mixed signal components and SemiSouth Laboratories Inc. of Starkville,
Mississippi, reported that they have entered into a collaborative agreement.
Under the agreement, the companies will share their expertise in the area of silicon
carbide (SiC) epitaxy wafer supply as well as certain technical knowledge. Both
companies have proprietary knowledge of SiC material and device fabrication.
Russell Crecraft, Microsemi Power Products Group president and general
manager, stated, "We are pleased to enter into a closer working relationship
with SemiSouth. Microsemi's requirements for SiC wafers will grow in the future
and we expect that this agreement will help SemiSouth's talented team of engineers
to continue their progress toward highly manufacturable silicon carbide epitaxy."
SemiSouth's President, Jeff Casady commented, "At SemiSouth, our long-term
goals have always been to enable the SiC power device market through high-quality
SiC epitaxy wafers and devices. We are excited to be able to work with Microsemi
by supplying them epitaxy wafer products needed for their product goals. Microsemi
has a great track record of supplying high performance power device products,
and this agreement represents a great step forward for the SiC power electronics
market." Microsemi
News Release Skyworks Receives Certification for Automotive and Other Industries CompoundSemi News StaffAugust 13, 2007...Skyworks Solutions Inc. of Woburn, Massachusetts USA, has received ISO/TS 16949
certification, an internationally accepted automotive quality system accreditation,
which allows Skyworks to become a supplier in the automotive market. Other markets
also utilize the standard. Skyworks, an analog and mixed signal semiconductor
component maker, will likely have numerous applications in which it can use
its components such as: wireless, keyless entry, RFID, Bluetooth capable devices,
GPS, satellite radios, and climate control sensors.
"Skyworks is proud to have completed this rigorous audit process involving
many facets including design, manufacturing, design validation, final test,
packing and shipping," said Nien-Tsu Shen, vice president of quality
at Skyworks. "The stringent certification now positions us well with
multiple German, Italian, American and French automotive customers and gives
us the opportunity to significantly expand our Linear Products business."
Company
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