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Editorial: Strategy Analytics' Asif Anwar Predicts GaN LD Market Trends
 
... At our recent Compound Semi Vision executive business forum in Austin, Texas, market analyst extraordinare, Asif Anwar of Strategy Analytics, presented a keynote address that provided enough solid and clearly bankable numbers to excite even the most jaded compound semi industry follower. While he covered the gambit of materials...
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Cree Announces Agreement with NIEC for SiC Diodes in Japan
CompoundSemi News Staff

July 22, 2007...Cree of Durham, North Carolina USA, announced an agreement under which Nihon Inter Electronics Corporation (NIEC) will introduce a line of silicon carbide (SiC)-based Schottky diode power rectifiers in Japan with Cree Inc. The agreement plays on the expertise of both companies. NIEC is a dominant maker of silicon Schottky diodes, and Cree is a maker of SiC Schottky diodes.

“Silicon carbide offers numerous concrete benefits over silicon-based rectifiers. Our market is showing growing demand for the far greater efficiency and performance offered by silicon carbide-based diodes, which enables reduced energy consumption in applications for home appliances including air conditioner and automotive invertors,” said Masao Ishii, NIEC president. “Cree is the world’s leader in silicon carbide components and materials, and it only makes sense that we chose the leading products.”

Cree points several additional benefits of SiC Schottky diodes: they eliminate the need for snubbers and reduce component count, they reduce power losses, leading to cooler operating temperatures, and they produce less electromagnetic interference (EMI). Cree News Release

Mimix Introduces 32 to 45 GHz GaAs MMIC Transmitter

July 22, 2007...Mimix Broadband Inc., of Houston, Texas USA, has introduced a gallium arsenide monolithic microwave integrated circuit (MMIC) transmitter that operates from 32 to 45 GHz. It delivers 14dBm OIP3 and 5dB conversion gain with +4 dBm LO drive level. The device utilizes .15 micron length GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. It integrates a balanced resistive mixer, a distributed amplifier, a LO doubler, and a LO buffer amplifier. The device called, XU1004-BD, is reportedly well suited for point-to-point radio, LMDS, SatCom or VSAT applications.

“The high level of integration in the XU1004-BD allows our customers to reduce the number of components on their board, facilitating a smaller design area and fewer interconnects,” stated Paul Beasly, Product Manager, Mimix Broadband, Inc. “The device is suitable for PTP commercial applications, as well as defense applications where board-space is a critical design requirement.” Company News Release

Sensors Unlimited Introduces New NIR SWIR Camera
CompoundSemi News Staff

July 23, 2007...Sensors Unlimited Inc., part of Goodrich Corporation, a supplier of shortwave infrared imaging systems, has introduced a new NIR/SWIR camera for high-speed, high resolution applications. The new SU-LDH Digital Line Camera for spectroscopy and machine vision applications is based on indium gallium arsenide technology. According to the company the infrared NIR camera increases line rates for 1024 pixels to over 40,000 lines per second. The company says this makes the camera ideal for optical coherence tomography (OCT) and high data rate industrial process control.

It comes in a variety of configurations; wavelength ranges are available from 0.8 to 1.7 microns and 1.0 to 2.2 microns. Square pixels for machine vision or rectangular pixels for spectroscopy can be selected and configured with optional 256, 512, or 1024 pixel arrays on a 25-micron pixel pitch, or alternatively a 50-micron pixel pitch for 256 and 512 arrays. Applications for the device include: biomedical imaging, inspection of wood, hot glass and metals processing, scientific imaging, agricultural inspection, high-speed spectroscopy, materials classification and sorting, remote ground sensing and telecommunications fiber and waveguide alignment. Sensors Unlimited News Release

LG Electronics to Offer Hybrid DVD Drive
CompoundSemi News Staff

July 23, 2007...LG Electronics of Taiwan reported that it will launch the GGC-H20LI hybrid optical disk drive supporting both the Blu-ray Disc (BD) and HD DVD formats, a Digitimes article indicated. The drive will come at a recommended price of US$400. Unlike the Pioneer BDC-S02, a BD Combo drive, the LG drive has its additional HD DVD read support. The multi format support comes at a price. Instead of the US$299, pioneer is selling their BD combo drive for blue ray and conventional DVDs, the hybrid drive from LG for Blu-ray, HD DVD, and conventional DVDs will cost about $100 more. Sony, Philips as well as Taiwan-based Lite-On IT, and Asustek Computer plan to offer BD Combo drives, with the same functionality of the Pioneer combo drives, in the second half of the year, according to the Digitimes article. Both HD DVD and Blu-ray DVD technology require the use of blue gallium nitride laser diodes.

Cree Celebrates 20 Years of Innovation
LIGHTimes Staff

July 19, 2007...Compound semiconductor and LED pioneering company, Cree, announced that it is celebrating the twentieth anniversary of its founding in 1987. The company grew from six founders in Durham, North Carolina USA, to over 2600 employees worldwide today. The company continues to innovate with its work in silicon carbide, gallium nitride, and LED lighting. The company says that opportunities have never been better, in part due to the drive for a cleaner environment via more energy efficient products. LEDs are just what the doctor prescribes for a cleaner environment.

"There is an ever-increasing global recognition that LEDs can be used in many lighting applications in place of today's common light bulb to help solve the world's energy and environmental challenges. Cree is in the unique position of being one of the few companies that has the technology to lead the LED lighting revolution, without the baggage of a traditional bulb business to slow us down," commented Chuck Swoboda, Cree chairman and CEO. Content continues for LIGHTimes SecondPage members...

RFMD Expands Capacity and Capabilities of Beijing Facility
CompoundSemi News Staff

July 18, 2007...RF Micro Devices Inc., of Greensboro, North Carolina USA, announced a major capacity expansion at its Beijing, China facility. Part of the Capacity expansion will be the production ramp of the company’s Polaris 3 RF solution scheduled this quarter. RFMD says that the increased capacity will approximately double the number of transmit modules the company can assemble. Additionally, the company said it would expand its capacity of wire bond and test capabilities during the current quarter, with full capacity available by November 2007.

The company has also chosen to add capabilities to the facility including flip chip packaging technology and its patent-pending RF shielding technology. In addition RFMD is developing proprietary RF test platforms internally and is collaborating with third party suppliers for advanced transceiver module testing. RFMD says that the 200,000-square foot expansion and new technologies will streamline the supply chain, speed time to market, and reduce manufacturing and inventory carrying costs.

"We are introducing new enabling technologies that support our market leadership in cellular front ends and position RFMD to deliver more highly integrated RF solutions that reduce overall costs and increase our dollar content in current- and next-generation cellular phones,” stated Bob Bruggeworth, RFMD's president and CEO. “Our patent-pending self-shielding technology, in particular, reduces the volume required for RF solutions by 30% to 50% and provides customers with RF components that are not sensitive to board placement.” Company News Release

Sirenza Produces High-Performance GaN PA; Names VP and GM of Premier Devices ShangHai
CompoundSemi News Staff

July 18, 2007...Sirenza Microdevices of Broomfield, Colorado USA, reported developing a gallium nitride (GaN) power amplifier operating in the .2 to 8 GHz range with an output power above 2 Watts and a noise figure below 1 db. The company boasts that its device is the first GaN PA that outputs such high power with such a low noise figure. At 12 V and 200 mA the MMIC PA recorded a NF of approximately 0.5 dB. At 15 V and 400 mA the NF was in the range of 0.7 to 0.9 dB. Maximum power density of the device was reported as 2.2 W/mm.

Kevin Kobayashi, executive engineering fellow, presented the details of the AlGaN/GaN-SiC high electron mobility transistor (HEMT) at the International Microwave Symposium in Hawaii on June 5. Sirenza’s GaN-based HEMT amplifier was built at Northrop Grumman Corporation’s Space Technology sector in Redondo Beach, California. Kobayashi pointed out that some of the potential applications for the device include cellular base station transceivers, WiMAX and CATV. “We describe fully monolithic solutions which offer the potential for development of future commercial devices with industry-leading performance, reproducibility and scalability for MMIC applications. Until now MMIC matched low-noise amplifiers have been limited to linear output of 1 Watt or less and noise figures above 1 db over a multi-octave bandwidth in the S- and C-band frequency range,” Kobayashi stated. Sirenza News Release.

In other company news, Sirenza named Robert Pinato as vice president and general manager of Premier Devices Shanghai (PDS), A Sirenza Company, reporting to Robert Van Buskirk, president and CEO. Sirenza News Release

Hoya Makes Nanoimprinting Mold for IBM

July 18, 2007...Nanoimprint mold making company, Hoya of Tokyo, reportedly fabricated a mold made out of quartz glass for IBM. The mold has line widths of just 30nm. According to an article in Nikkei News, IBM reportedly used the mold to prototype a device with line width variations of just 2.6nm (notably only half the variation of argon fluoride laser photolithography). Nanoimprinting, uses molds to create circuit patterns. Hoya makes such molds. The mold is pressed onto a photocuring resin with a special tool. The impressions that it leaves in the semiconducting resin are hardened using ultraviolet light. These impressions form circuit patterns. According to the article, Hoya plans to supply IBM with a mold capable of defining 20nm lines within the year. Hoya will also work to develop a mold for 10nm lines. The imprint mold that Hoya made for IBM was for use on a tool from Molecular Imprints, a nanoimprinting tool making company, according to Molecular Imprints. (Ref: Coverage).

SatCon Expects About $4.7 Million From Exercise of Warrants

July 18, 2007...SatCon reported that it obtained about $4.7 million in financing from the exercise of warrants. The company has agreed to amend its existing Warrant B's issued in connection with its $12,000,000 secured convertible note financing to reduce the exercise price from $1.68 to $1.31 per share. Also under the agreement, the note holders have all exercised such Warrant B's. Company News Release

Alain Couder Joins Bookham as New President and CEO

July 16, 2007...Bookham Inc., an optical electronics component maker of San Jose, California USA, reported that the company has appointed Alain Couder as president and chief executive officer (CEO). Bookham said it expects Couder to also be elected to the company’s board of directors. Alain Couder succeeds Dr. Peter Bordui, acting president and CEO. Dr. Bordui will now serve as chairman of the board of directors. Mr. Couder will take his position as CEO effective August 13, 2007 at the company headquarters in San Jose.

“I am joining Bookham at a time when, having achieved significant technological success, the Company is poised to achieve profitable growth in a market eager for ever increasing bandwidth,” said Mr. Couder. “I plan to leverage the Company’s position in the communication market to increase shareholder value.”

Mr. Couder most recently served as president and CEO of Solid Information Technology Inc., a supplier of database solutions. Prior to joining Solid Information Technology, Mr. Couder served as president and CEO of Confluent Software, Inc., and IP Dynamics, Inc., and as chairman and CEO of Packard Bell NEC, Inc. Mr. Couder has also held the position of chief operating officer (COO) for both Agilent Technologies and Groupe Bull. Earlier in his career, Mr. Couder held a series of general and technology management positions at Hewlett Packard and IBM. He has also served as an advisor for Sofinnova Ventures, a venture capital firm. Bookham News Release

Emcore Photovoltaic Division Up 30 Percent Despite Net Loss
CompoundSemi News Staff

July 16, 2007...Emcore reported its preliminary unaudited financial results for the second fiscal quarter ending March 31, 2007. The company reportedly posted consolidated revenue of $40 million, a 3 percent increase from the prior quarter, and a 10 percent increase from the same period a year ago. So for the first six months of the fiscal year, the consolidated revenues totaled $78.1 million, a 9 percent increase from the first half of the last fiscal year. Fiber optics revenues for the quarter totaled $26.2 million, an increase from $25.9 million reported during the same quarter last year, and an increase from $25.3 million in the previous quarter. The company revenues from the Photovoltaics division rose about 30 percent to $13.4 million from $10.3 million in the quarter a year ago.

Despite solid quarters from the fiber optics business and growth from the photovoltaic business segment, the company reported a net loss for the quarter of $14.4 million and a net loss for the six month period of $26.2 million. The net loss widened from the net loss reported for the quarter during the previous year of $9.6 million and a net loss for the six month period of $14.2 million. Preliminary, Unaudited Financial Result for Quarter Ending March 31, 2007

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Commentary & Perspective...

Strategy Analytics' Asif Anwar Predicts GaN LD Market Trends

July 17, 2007...At our recent Compound Semi Vision executive business forum in Austin, Texas, market analyst extraordinare, Asif Anwar of Strategy Analytics, presented a keynote address that provided enough solid and clearly bankable numbers to excite even the most jaded compound semi industry follower. While he covered the gambit of materials and applications sectors at Vision, he provides our readers here with an update on one of the hottest topics, the gallium nitride (GaN) based laser diode (LD) market.

What people always want the most are the numbers. Well, here they are: According to Strategy Analytics, the market for GaN-based laser diodes will grow at a CAAGR of 103% through to 2011 with the consumer based optical data storage market dominating all other applications. Principal optical data storage applications will be in games consoles, PCs and home theater; the latter finally becoming the dominant market as the two competing formats, Blu-Ray and HD-DVD, gain mass market acceptance. That, reassuringly, reaffirms their previous predictions, which is that the optical data storage market will account for >99% of the total available market for GaN-based laser diodes from 2006 through to 2011.

Furthermore, the average selling price of all GaN based laser diodes is expected to rise with a CAAGR of ~4%, reflecting the move from just playback devices to the higher performance recordable devices. SA believes that the GaN-based laser diode market will increase at a CAAGR of 103% from $33.9 million in 2006 to over $1.2 billion in 2011 and that the supply of GaN-based laser diodes will be dominated by Japan with that country supplying almost 100% of the total demand for at least the next three years. And the part that might surprise some... Strategy Analytics says that GaN laser diode production will move away from sapphire substrate usage over the next five years. Asif notes that, while this migration will not affect companies like Rubicon and Kyocera materially in a significant way, a similar development in LED production would have serious ramifications for sapphire substrate suppliers.

For those outside the compound semi industry and new to blue spectrum laser diodes, it's important to note that the markets addressed above all use the same basic GaN-based laser diodes, whether they're Blu-Ray or HD-DVD. Nichia pioneered the blue spectrum LDs and the formula for growing these key devices remains primarily the same. To function at their optimum, they all rely on the best possible GaN compound semi material. The better GaN starting substrates become, the better the LDs. And if the improvements work for LDs, and the prices of GaN substrates become more attractive, you can bet that LED manufacturers will look to GaN as their starting substrates of choice as well. That's long been the understanding within CS industry circles. And GaN substrate quality, and quantity, is indeed improving.

Asif points out that, up until 2006, GaN-based laser diodes had been deployed in a range of markets which included printing, spectroscopy, biological agent detection as well as optical data storage. Strategy Analytics' original 2004 report "Gallium Nitride Laser Diodes: Markets and Applications" predicted that the consumer optical data storage market would be the largest, dominant market for GaN-based laser diodes but development had been hindered by the high cost of the laser diodes attributable to two main factors: Low manufacturing yield and a lack of competition. "2006 finally saw the launch of the Playstation 3 games console and whilst the initial launch was hindered by the unavailability of GaN-based laser diodes in sufficient quantities, it looks like improvements in manufacturing yield and consumer demand will mean that the market for consumer optical storage devices, especially games consoles using GaN-based laser diodes, will finally "take-off" in 2007 as a precursor to a wider consumer electronics market. By 2011, Strategy Analytics is predicting a significant shift in the market with the demand from gaming consoles, using low cost, low power GaN laser diodes, being supplanted by a significant rise in the recordable versions of Blu-ray and HD-DVD players, using higher cost, higher power laser diodes as these systems become an essential part of the consumer's home theater system," reports Asif. He goes on to report...

"Nichia continues to dominate the commercial supply of InGaN blue violet laser diodes and is reported to have > 80% of the market share. Its dominance in the market was based around a strong materials and devices patent portfolio. This has meant that as long as devices were fabricated on foreign substrates Nichia was in a strong position to ask for royalties and ensure that other companies never represented a significant commercial threat.
This strong position has had the effect of pushing Nichia's competitors towards the development of low-dislocation native substrates to enhance both performance and yield, but more importantly allow them to develop their own IP on which to enter the lucrative InGaN LD market. The technological developments in substrates and growth technologies have removed a lot of the IP worries allowing traditionally strong manufacturers of consumer laser diodes to enter the market.

"In the first half of 2006, there were a limited number of commercial suppliers of GaN-based laser diodes; Nichia Chemical Corporation, Sony, Sanyo and TopGaN. This situation changed in the autumn of 2006 with Sharp Corporation announcing it was to begin mass production of both low power R/O (read only) and high power R/W (rewritable) laser diodes for the consumer market. This element of competition has been further enhanced by the announcement in early 2007 by Sony Corporation that they were to boost the output at their Shiroishi plant to a point where they could not only meet all internal demand for GaN-based laser diodes but also be in a position to supply third parties.

"The track record of Sharp and Sony in making a significant fraction of the DVD laser market their own, suggests that they will take a large slice of the InGaN LD market too and we expect additional entrants such as Rohm to this market over the next two years. Rohm, a Japanese manufacturer that has been dominant in the supply of both IR CD-laser diodes and red-DVD laser diodes, has recently made strides in the development of laser diodes using non-polar GaN substrates, resulting in greater efficiencies and possibly a quicker route to a green InGaN laser diode. Rohm's developments, whilst impressive, will need to be transferred to a volume manufacturing environment and it is likely that this will take at least two years to realize.

"The activities of Sharp and Sony as well as other laser diode manufacturers point to GaN laser diode manufacturing moving away from sapphire substrates to nitride substrates over the next five years to both enhance the performance and yield of GaN laser diodes as well as avoid the potential IP pitfalls associated with device production on foreign substrates. Sapphire substrate suppliers such as Rubicon and Kyocera will see demand from the GaN laser diode market drop as the manufacture of GaN laser diodes will move away from sapphire substrates to nitride substrates over the next five years. While the move will not affect these companies materially in a significant way, these companies should follow the migration closely bearing in mind potential trends in future LED production."

If you'd like to contact Asif Anwar directly for more information, you can email him at: aanwar@strategyanalytics.com, or you can contact Chris Taylor at: ctaylor@strategyanalytics.com

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