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Editorial: The Role of Compound Semiconductors in Tomorrow's Consumer Lives and Economy
 
... This week we present a guest editorial by Nisa Khan who is best recognized in the compound semi industry for her pioneering work on 40 Gb/s InP modulators and switches at Bell Laboratories, which she continued on at JDSU and at her own startup Atrium Networks. With her recent...
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Kyma Awarded New DOD Development Contract for Native GaN Substrate Device Technology
CompoundSemi News Staff

January 16, 2007...The United States Department of Defense (DOD) has awarded Kyma Technologies of Raleigh, North Carolina USA, a $3.3 million mult-year contract to develop high-power high frequency electronic device technology. The contract, which draws some of its funding from both the Missile Defense Agency (MDA) and the Air Force Research Laboratory (AFRL), hopes to utilize the company’s low defect density native GaN substrates to develop and advance high-power high frequency (HPHF) electronic device technology for applications such as: radar, electronic warfare, communications, and optoelectronic systems critical to the DOD. (“Native GaN substrates” refers to single crystal GaN substrates that are sliced from crystalline boules of GaN.) Kyma points out that the new contract leverages the achievements and plans of several of the company’s ongoing cooperative research and development agreements with the AFRL, the Naval Research Laboratory (NRL) and several MDA small business innovative research programs (SBIRs) and small business technology transfer research programs (STTRs) (Ref: NRL Coverage, AFRL Coverage, MDA Coverage).

Mr. John Blevins of AFRL’s Materials Directorate is the technical monitor of the new program, while Dr. Drew Hanser, Kyma’s CTO and VP Business Development, is the principal investigator. “While today’s HPHF GaN device technology has reached impressive performance levels, reliability issues remain which we believe are tied to the current reliance on foreign substrates. Kyma’s native GaN has the potential to solve these problems by enabling a higher quality device active region. Our overall approach is to use the best materials possible, prove out the device benefits, while working in parallel to make these materials more readily available,” said Hanser.

Dr. Keith Evans, Kyma’s president and CEO, added, “This program represents an important contribution to our mission to provide our customers with a range of best-in-class III-nitride products. We are thankful for the vision and the support of our DoD colleagues and are dedicated to making this a successful effort.” Kyma News Release

Spire's Bandwidth Awarded Nasa Contract
CompoundSemi News Staff

January 16, 2007...NASA’s John Glenn Research Center in Cleveland, Ohio USA, has awarded Spire Corporation a $600,000 contract to develop a new type of thermo photovoltaic (TPV) cell that produces electricity from heat. In theory, NASA could use TPV cells to generate electricity from heat produced by radioisotope sources for long duration space missions. Potential consumer applications include using heat from combustion to produce electricity.

According to Spire, the work will be carried out in part at its wholly owned subsidiary, Bandwidth Semiconductor. Bandwidth Semiconductor reportedly already offers gallium arsenide (GaAs) solar concentrator cells for converting the sun’s energy to electricity. Bandwidth Semiconductor says it has over ten years of experience producing cells like these TPV cells, which use indium gallium arsenide (InGaAs), a variation of GaAs. Spire News Release

SatCon Awarded Subcontract in DARPA Diode Battery Project
CompoundSemi News Staff

January 15, 2007...SatCon Technology, a maker and developer of power electronics of Boston, Massachusetts USA, reports that it was awarded a $208 thousand subcontract from North Dakota State University (NDSU) to design electronics for an advanced Diode Battery. NDSU was contracted through a Defense Advanced Research Projects Agency (DARPA) contract to develop a Micro-Isotope Power Supply. NDSU has subcontracted SatCon Technology to design power conditioning and management for the battery devices that NDSU is producing. Other collaborators on the team include: experts from Rensselaer Polytechnic Institute, Battelle Pacific Northwest Division (Pacific Northwest National Laboratory), and the Naval Research Laboratory.

According to SatCon the goal of the program is to develop a one cubic centimeter AlphaVoltaic (AV) battery that can deliver 35 milliwatts continuously for many months to many years. SatCon explained in its news release that the principle of the operation is very similar to photovoltaics (PV) with the radioisotope the source of energy rather than the sun. The AlphaVoltaic is designed for higher energy excitation, using wider bandgap materials than photovoltaics. SatCon also said that batteries like these could be used to power unattended sensors for applications such as perimeter defense networks and other broader applications. SatCon's Chief Executive Officer, Dave Eisenhaure stated, "The company is poised for substantial growth in alternative energy solutions and advanced technology for energy and power management. We believe such development programs will advance the state of the art in energy storage - critical for the widespread adoption of alternative energy technologies. This contract underscores our leadership in supplying power conversion products in a new and growing market for advanced power solutions." SatCon News Release

Xponent Photonics Goes Fabless With Help From GCS
CompoundSemi News Staff

January 15, 2007...Global Communication Semiconductors (GCS), Inc. of Torrence, California USA and Xponent Photonics, Inc. have signed a foundry service agreement in which GCS will manufacture Xponent’s product portfolio. Under the agreement GCS will utilize its proprietary laser and PIN PD (positive intrinsic negative photo diode) processes to manufacture Xponent’s product portfolio.

GCS will use high-volume 4-inch wafer manufacturing techniques to produce the optical component portfolio for Xponent. Xponent produces a wide range of opto-electronic components including: triplexer and diplexer FTTx components, transmitter optical subassemblies (TOSA), fiber ready optical assemblies (FROA), and fiber aligned packages. Xponent says it uses translates the complexity found in traditional optical assemblies into surface mounted photonics. According to Xponent, these SMP chips are designed for low cost manufacturing criteria such as: waferscale fabrication, test and burn-in of Surface Mount Photonics chips; low-cost assembly using passive alignment on flip-chip die bonders (i.e. no active laser welding or other active alignments required); Environmental sealing with simple encapsulant. No hermetic packaging is required. Xponent says its goal is to become a broad-based horizontal supplier of merchant optical assemblies and chipsets.

"We're pleased to be working with GCS. They have an outstanding track record of success with fabrication of state-of-the-art InP and GaAs devices and are right on target with the technology transfer," said Jeff Rittichier, President and CEO of Xponent. "With the completion of the GCS transfer in late winter, Xponent will be the world's only completely fabless volume producer of optical components." GCS News Release

 

RFMD Releases GaAs pHEMT RF Switches
CompoundSemi News Staff

January 15, 2007...RF Micro Devices showcased its newest RF switches last week at the IEEE Radio and Wireless conference in Long Beach, California USA, January 9-11. According to RFMD, the RF1200 and the RF1450 utilize the company’s gallium arsenide manufacturing capability and switch technology for the company’s transmit modules in applications including: multi-mode GSM / WCDMA cellular handsets, antenna tuners, IEEE802.11a/b/g WLAN and cellular infrastructure.

Reportedly meeting all the linearity requirements for WCDMA, the RF1200 is a single-pole double-throw (SPDT) high-power switch that features low insertion loss, low control voltage and what RFMD says are very good harmonic characteristics. It is fabricated with 0.5um GaAs pHEMT process and is packaged in a very compact 2X2mm, 6-pin, leadless QFN package. The RF1450, designed for multimode WCDMA applications, is a single-pole four-throw (SP4T) high-power switch specifically designed to provide what RFMD contends is superior linearity performance. It includes integrated decoding logic, allowing just two control lines needed for switch control. It is packaged in a compact 3X3X0.6mm, 16-pin, leadless QFN package. Company News Release

Digi-Key Agrees to Distribute Cree’s SiC Power Electronics

January 11, 2007...Cree Inc. of Durham North Carolina USA, and Digi-Key Corporation of Thief River Falls, Minnesota signed a global distribution agreement for Cree’s silicon carbide-based power devices. Cree, a maker of silicon carbide (SiC) semiconductors, uses the material in power electronics, solid state lighting, and communications. SiC is ideal for high power and high frequency devices because of its strength and its ability to dissipate extreme heat.

Digi-Key Corporation will add Cree’s power electronics devices to its print and online catalogs which already include a range of Schottky diodes. Digic-Key stocks and sells electronic devices directly to customers. The Schottky diodes, which Digi-Key stocks, range from 300V to 1200V and have current ratings from 1A to 20A. Cree said that the distribution agreement will allow Digi-Key to fulfill both its customers’ design and quantity needs. “Cree’s expertise in silicon carbide brings greater energy performance to a number of power applications, including power factor correction in personal computer and laptop power supplies,” said Mark Larson, Digi-Key president and CEO. “We are very pleased to add Cree to our line card and certain that its products will be of consequential interest to many of our customers.” Cree News Release

Raytheon Reaches Milestone in Testing GaN Circuit Lifetime
CompoundSemi News Staff

January 11, 2007...Raytheon reported achieving a testing milestone for gallium nitride semiconductor technology. Ratheon’s Integrated Defense Systems division developed GaN semiconductor circuits which recently went through a strenuous 8,000 hours of operational testing. The monolithic microwave integrated circuits (MMIC) for military radar, communications, electronic warfare, and missile systems, went through testing conducted at elevated temperatures and more extreme operating conditions to simulate performance over about 80,000. According to Raytheon, this equates to more than nine years of non-stop normal operation. Raytheon says it plans to continue accumulating test hours on the circuits into 2007. The company also will run concurrent testing into 2007.

According to Raytheon, GaN semiconductors offer substantially improved power and functionality beyond current semiconductor technologies. They operate at higher voltage levels allowing significantly greater power output for the same size chip. Additionally, the material characteristics of GaN semiconductors allow efficient multi-band or wideband operation. Raytheon pointed out that GaN technology used in radar can reduce the antenna size by half while more than doubling the search volume. This improves the radar's transportability and reduces acquisition and lifecycle costs. Company News Release

Freescale Reveals New RF Amplifiers
CompoundSemi News Staff

January 10, 2007...Freescale Semiconductor of Austin, Texas USA, unveiled four new general purpose broadband RF amplifiers. The amplifiers boast the ability to deliver high gain linearity over bandwidths from DC up to 6 GHz. The company indicated that the amplifiers are suited for applications ranging from WiMAX base stations to meter readers, set-top boxes, RFID readers, and any application requiring a cost-effective small signal gain source. The new devices are reportedly the first of the company’s to feature indium gallium phosphide (InGaP) active biasing technology, which reduces performance variation due to temperature and supply voltage variations and provides ease-of-use for system designers.

The company added the four new devices to its portfolio of 13 other general purpose amplifiers (GPA). Freescale entered the GPA market in 2004 with gallium arsenide devices designed to deliver performance and reliability with a dynamic supply capability. “The addition of these devices strengthens our portfolio and allows designers to meet a greater variety of system and market requirements,” said Gavin Woods, vice president and general manager, RF Division, Freescale Semiconductor. “Customers using these amplifiers will benefit from Freescale's worldwide technical support and our ability to deliver large volumes consistently.” According to Freescale, samples of the MMG3014N and MMG3016N are expected in March 2007 with production planned for May 2007. Company News Release

SatCon Receives UL1741 Approval for its GFDI System
CompoundSemi News Staff

January 9, 2007...SatCon Technology reports receiving UL1741 approval for its ground fault detection interruptor (GFDI) for commercial photovoltaic inverters. According to SatCon, the purpose of the GFDI is to detect low levels of ground currents and interrupt any faults within specified limits. SatCon has developed and installed GFDI for its photovoltaic systems well before the electrical protection system becomes mandatory for photovoltaic that interconnect with electrical power systems under UL1741 by May 7, 2007. SatCon says PowerLight Corporation is the first to install its new GFDI device.

The UL1741 standard from Underwriters Laboratory is the electrical engineering standard to safely convert DC photovoltaic power into AC power. While other companies have made solar inverters that comply with previous versions of the UL1741 standard, SatCon contends it is the first to offer a solar inverter that complies with the latest soon-to-be mandatory UL1741 standard. SatCon News Release

Lockheed Martin Demonstrates Solid State Radar Antenna
CompoundSemi News Staff

January 9, 2007...Lockheed Martin reports that it has completed a successful demonstration of its solid state radar antenae with open architecture software. Lockheed Martin (Lockheed) says it was able to display live tracks with its internally developed Scalable Solid-State S-band Radar (S4R) Engineering Development Model (EDM). According to Lockheed, the live tracks demonstrate the company’s proven approach to an active antenna-based radar system designed with commercial hardware and open architecture software. The S4R EDM system, developed using silicon carbide (SiC)-based high-power transmit and receive (T/R) modules, is an electronically steered radar system, which can support air surveillance, cruise missile defense, ballistic missile defense, counter target acquisition, and littoral operations.

The company points out that SiC provides greater power than other commonly used materials due to its increased heat tolerance. With more power, the radar has longer range and provides more precise target discrimination. Lockheed derived the proven design of from the S-band antenna developed for the U.S. Navy's Volume Search Radar on the DDG-1000 next-generation destroyer. Lockheed indicated that the transmit/receive modules, the most critical components of a solid state antenna, serve as multiple function circuits that generate and transmit signal power over the full face of the radar, receive the reflected radar signal, amplify it for processing, and electronically steer the radio frequency beams in space. Company News Release

Veeco Introduces New GaN MOCVD Platform for Power LEDs and Blue Lasers
CompoundSemi News Staff

January 9, 2007...Veeco Instruments Inc., has introduced its new TurboDisc "K-series" metal organic chemical vapor deposition (MOCVD) gallium nitride (GaN) platform for the production of high-brightness LEDs (HB-LEDs). The company reports that it received orders totaling $10 million for five new systems from three leading HB-LED manufacturers. Veeco's new TurboDisc "K-series" MOCVD platform includes the K300 and K465 models. According to Veeco, they offer a modular, upgradeable path to higher throughput, larger diameter reactor chamber, and reduced cost of ownership. Veeco contends that the K 465 has 50 percent greater throughput than any competitive MOCVD production tool on the market. Veeco says that both reactors offer volume production of GaN-based blue and green LEDs and blue laser diodes.

Piero Sferlazzo, Vice President, General Manager of Veeco's MOCVD operations, said, "Our new modular system, which is extendable to larger reactors, is the only platform capable of continuous operation available on the market today.”

Edward H. Braun, Chairman and CEO of Veeco, commented, "Veeco's new multi-generational platform and larger reactor capability will give our HB-LED customers a long-term cost of ownership advantage plus the technology to achieve their LED brightness roadmap objectives.” Braun added, “We continue to anticipate strong Veeco growth in this market as HB-LED's experience adoption in applications such as automotive, architectural lighting and backlighting for laptops and LCD-TVs. Veeco will continue to partner with our customers to deliver innovative technology solutions and world-class process and applications support as the industry advances towards solid state lighting." Company News Release

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Commentary & Perspective...

The Role of Compound Semiconductors in Tomorrow's Consumer Lives and Economy
M. Nisa Khan, Ph.D.

January 9, 2007...This week we present a guest editorial by Nisa Khan who is best recognized in the compound semi industry for her pioneering work on 40 Gb/s InP modulators and switches at Bell Laboratories, which she continued on at JDSU and at her own startup Atrium Networks. With her recent Wall Street finance experience in managing assets at American Express, she is now following her true passion - contributing to technology leadership with a unique combination of technical and financial background.

Despite the cyclical nature of most economies, compound semiconductor products and technologies have continued to uniquely empower our lives and businesses for the past few decades. The impact of compound semiconductor-based products will be even more enormous in the future as the global economy takes new and powerful shape while the populous and developing countries like India, China, Brazil and others rapidly expand their economies. The unique characteristics of compound semiconductors enable us to produce ultra high-speed and high-power electronic and optoelectronic components with shrinking chip sizes and higher efficiencies, which no other materials have been known to match. I feel that further advancements in the CS technologies, along with the market need for information transport, information processing or computer-like gadgets, as well as efficient power, lighting and energy utilization by government, businesses, and consumers will drive the CS market to gigantic levels in the next several years. Consumer education and awareness, as well as industry partnership and cross collaboration for compound semiconductors, is now more crucial than ever for improving both people's lives and the global economies.

The role of compound semiconductors first became prominent as the march-off of the information age in the late 90's was aided by several compound semiconductor technologies for crucial and high-end applications, such as telecom lasers and photodetectors, and high-speed amplifiers for telecom and wireless equipment. Meanwhile, the consumer products and applications that use compound semiconductors have broadened vastly and are now enjoying a multi-billion dollar market. Some of these products include various playstations, handheld computers, wireless phones, DVD/CD players, and others. Currently the CS technology that is considered the most disruptive is that of Solid State Lighting (SSL) devices that use light emitting diodes (LEDs) for display and lighting, a CS technology that is expected to be widely used for general lighting in the future. These specific electronic and optoelectronic devices are a result of the unique bandgap characteristics of compound semiconductors leading to carrier generation and transport that were realized by scientists several decades ago. Although CS technologies have undergone numerous challenges and will still be overcoming many challenges to lower the cost of products while making them more efficient, it is now ever more clear that LEDs and modern consumer high-end gadgets will take the market for CS to grand new heights in the foreseeable future.

In general, high-performance compound semi electronic technology sectors face significantly lower challenges in the marketplace at present, compared to the high-performance compound semi optoelectronic technology sectors. This is primarily due to the fact that CS electronic technologies are more mature and often have fewer fundamental physics challenges compared to their optoelectronic counterpart. Since the CS-based consumer electronic market is currently much broader and better known, I wish to focus on the role of CS optoelectronics in tomorrow's consumer lives and economy, because I feel we need to better understand, and thus, better prepare for the ensuing impact. The major consumer applications for CS optoelectronics will obviously come from LEDs.

The various LED technologies for wide-usage consumer applications remain under development to improve cost, quality, and high-volume manufacturability. Major companies such as: Philips, GE, Toyota, and others currently have extensive LED development programs underway for deployment in general lighting markets, automotive lighting and display, LCD TV backlighting, traffic signals, mobile phone flashes, and various public and business place lightings. The potential advantages of replacing the current lighting technologies in these areas include: longer lifetime, lower energy consumption, low temperature operation, fast on/off response times, low heat generation, higher reliability (higher shock and vibration tolerances), and ultimately lower maintenance costs and overall cost savings. The biggest and potentially most important of these advantages may be that significant energy cost savings can be anticipated by consumers, government, and businesses, which is crucial as we all recognize the global energy consumption challenge for years to come.

Although currently limited, LEDs have already captured applaudable marketshare, totaling over $3 billion for consumers and businesses. These markets include, for example, lighting in refrigerator cases and signs in Wal-Mart stores, automotive headlights, display lighting in mobile handsets, and traffic lights. While various color such as red, blue, blue-green, and yellow-LEDs have been developed for some time, the white-LED is both harder to develop technologically and the one most in demand. Color-LEDs generally use Group III-Nitride based semiconductors in various binary, ternary, and even quaternary compounds such GaN, InGaN, and AlGaInP on single crystal substrates. The white-LED can be produced by methods such as wavelength conversion of single-color LEDs, mixing multiple color LEDs, and homoepitaxial ZnSe. While the color-mixing technique is the more efficient technique for producing white-LEDs, it usually poses a challenge for maintaining a fixed white color over time as the different color LEDs inside degrade differently over time.

LEDs have steadily improved in performance and cost over the past four decades and are expected to move from the current limited applications to the much larger market, i.e., general lighting. Based on research conducted by the Department of Energy (DOE) and the Optoelectronics Industry Development Association (OIDA), LEDs (as Solid State Lighting Devices) will be the preferred method of illumination in homes and offices by 2025. As such, the white LEDs are building momentum at a rapid rate and we may very well see a revolution in lighting which would be comparable to blowing out the gaslights by Edison's incandescent lamp over 100 years ago. The LED technology will compete for all applications from the smallest personal lamp to the most elaborate lighting system for sports arenas, providing superior performance and lower cost of ownership, at any point in this dynamic range of 11 orders of magnitude. As discussed above, the most important benefit of this disruptive technology will be energy savings and according to Dr. Roland Haitz, a retired researcher from Agilent, a complete conversion to LED based lamps could reduce electricity consumption for lighting by up to 75% and reduce global coal production by approximately 600 Mtons/year. Indeed, there is no single technology investment on the horizon with a better environmental benefit to cost ratio. Numerous public and private small to very large companies are driving the current LED market from over $3 Billion currently to more than doubling it within the next two years. This pace is only expected to increase as we head toward 2025. Although there are too many companies involved in this space, the following are currently most noteworthy: Cree, Nichia, Osram, Philips-Lumileds, Toyota-Gosei, Seoul Semiconductors, and Showa Denko.

Another major area under development that will address the global energy challenge is are semiconductor photovoltaics (PV) or, simply, solar cells. Most are made of silicon, but the high efficiency, multi-junction CS-based cells preferred for satellite applications are being applied now to terrestrial applications. In addition to the traditional CS solar technologies created at Spectrolab and Emcore, a startup company named Nanosolar in California announced the making of cost efficient CIGS solar cells from copper indium gallium selenide. The solar cell process, in contrast to the traditional fossil-burning process, generates electricity without moving parts, noise, or pollution such as greenhouse gas emission. Currently the global energy demand is growing rapidly. An estimation from an Washington State University study in January 2003 projected that, in the years to come, a 25% increase in energy demand in industrial countries and more than a 100% increase in the developing countries are expected. This concerning demand along with the rising prices for fossil fuels, concerns about the electric grid's stability, and worries about global warming are all fueling the growth of solar cells. The industry is expected to grow from $11 billion in 2005 to $51 billion in 2015, according to a projection by Clean Edge Inc., a market research firm focused on clean technology. The solar cell technology is expected to provide cheaper electricity to the people in the US within the next ten years according to the Solar Energy Industries Association. Adoption of this technology will also substantially reduce the greenhouse gas emissions (e.g., 25% reduction expected in California over the next 14 years), which will help expand the market for solar power.

Understanding that lighting and energy consumption are fundamental part of our lives, and hence, how successful disruptive technologies in these arenas can impact our lives and economy is straightforward. Further improvements in the LED technology, along with lower costs, will drive the current lighting and display market from a few billion to several tens of billions within the next decade, while dramatically saving the cost of ownership to individuals and businesses. The replacement of the current incandescent and fluorescent lighting will also provide energy savings of over 60% while virtually eliminating the emission of greenhouse gases from the current lighting technology. Less straightforward is the electronic device side of CS technology. But we have seen, and are living through, the age of what silicon has done for our society with communication and information processing electronic devices and systems. Compound semiconductors are capable of providing the same electronic functions as silicon at a significantly smaller scale, especially where silicon technology is challenged. CS solar cells replacing silicon are a prime example. Undoubtedly, the cost savings plus the environmental considerations provided by these important CS technologies will have gigantic impact leading to vast changes in consumers' lives and global economy. In order to make the implementation of the technologies rapid and efficient, relevant information distribution and sharing become especially important as the CS industry starts to escalate to very large proportions.

M. Nisa Khan, Ph.D.
Technology and Finance Consultant
3 Maple Drive, Colts Neck, NJ 07722
Email: nisa.khan@ieee.org

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