SolidStateLighting.net             
News  |  Events  |  Jobs  |  Contact Us  
Compound Semi Online rss feeds - CompoundSemi.com - All News
Sponsored Links

Commentary: Where to Go for Knowledgeable Nitride Market Research
 
... One of the things we're especially proud of here at CompoundSemi News is an ability to field questions about our industry and point inquiring minds in the right direction. (And you can't believe some of the far out questions we get!) Answers-R-Us. If we don't have the right answer,...
Jump down to the full story

Features:
Get your CS News
via email
Catching up?
Check the list of
recent headlines
(the last 2 weeks)

 


Jury Rules Against Fairchild Semiconductor in First Part of Power Integrations' Infringement Lawsuit
CompoundSemi News Staff

October 16, 2006...Fairchild Semiconductor, a power electronics company of South Portland, Maine USA, has reportedly lost the first phase of a jury trial for infringement against Power Integration. The jury ruled that Fairchild Semiconductor willfully infringed four patents asserted by Power Integrations and awarded approximately $34 million in damages. Despite this, Fairchild says it will ultimately prevail in the lawsuit, and it added that the second phase of the three phase trial has not yet begun. Fairchild said it is disappointed by the verdict in the first phase of the trial, and it contends that a jury has not yet heard the company’s defense that the patent claims are invalid. Fairchild also said it will continue to offer its full line of pulse width modulation (PWM) products.

The trial was divided into three phases. The first phase was on infringement and the willingness of infringement. The second phase of the trial , scheduled to begin Dec. 4 before a different jury, will rule on the validity of the Power Integrations’ patents being asserted. The enforceability of the asserted patents will be ruled on in the third phase of the trial with yet another jury. To win the jury’s recommended damages, court must rule that Power Integrations’ asserted patents are both valid (a claim to be evaluated in phase two of the trial) and enforceable (ruled on in phase three). Fairchild News Release

In April Fairchild brought a counter patent infringement lawsuit against Power Integrators for infringement of US patent no. 5,264,719. Tom Beaver, Fairchild's executive vice president for worldwide sales and marketing, said at the time, “…Fairchild is asserting a patent that pre-dates Power Integrations' patents by at least fifteen months.” (Ref: April 2006 Coverage). The litigation between the two companies began in October 2004 Power Integrations Files Patent-Infringement Suit against Fairchild Semiconductor. (Ref: Oct. 2004 Power Integrations News Release).

Solar Power 2006 Conference and Expo Kicks Off in San Jose
Scott McMahan

October 16, 2006...The Solar Power 2006 Conference and Expo opened today in San Jose, California USA. The conference, which is reportedly the largest business to business solar power conference, is organized by the Solar Electric Power Association and the Solar Energy Industries Association. (Ref: Solar Power 2006 web site). The location of the conference is a fitting tribute for a state that has taken the lead in alternative energy and environmental concerns. Over 4000 attendees and more than 160 companies are expected to exhibit. California Governor Arnold Schwarzenegger in August passed what was dubbed the ‘Million Solar Roofs initiative.’ It requires developers who make over 50 new single-family homes to offer the option of a solar energy system to all of them by January 1, 2011. (Ref: Governor News Release).

In late September Governor Schwarzenegger passed legislation to reduce greenhouse gas emissions within the state. The law is part of the goal of reducing greenhouse gas emissions to 1990 levels by 2020, a reduction of about 25 percent. (Ref: CBS news coverage). Thin film cells continue to hold promise in terms of efficiency. Emcore and Heliovolt are two important players in this arena. (Ref: May Editorial Coverage). However, silicon still has the edge in cost per watt. Kycera and SunPower announced independently that they have made major breakthroughs in solar energy technology, according to an EE Times article. Japan’s Kycera announced that it has achieved a new world record of 18.5 percent energy conversion efficiency for a 15- x 15-cm multicrystalline silicon solar cell. SunPower claimed 22 percent efficiency for single crystalline silicon solar cells. Thin film solar cell maker, Heliovolt claims that its manufacturing process allows CIGS (Copper Indium Gallium Diselenide) solar cells to be produced in a way that makes the technology economical compared to silicon solar cells. Overall, it is difficult to tell how the solar market will play out, but California will likely be a big part of it.

Sirenza Begins Volume Production of RF Receiver for Satellite
CompoundSemi News Staff

October 17, 2006...Sirenza Micro Devices announced the production of a high performance receiver for satellite radio. The S52 20077 reportedly converts signals from radio frequency (RF) to digital baseband. "Sirenza's engineering group collaborated closely with SIRIUS on the radio development," stated Richard Bay-Ramyon, strategic business unit director of broadband and consumer products at Sirenza Microdevices.

"The S520077, utilizing IBM's advanced silicon germanium semiconductor process technology, is one of the most highly integrated RF ICs developed to date by Sirenza," stated Robert Van Buskirk, president and CEO of Sirenza Microdevices. "Sirenza's design and production capabilities support an increasing customer demand for higher levels of RF component integration. This new product is a good example of Sirenza's ability to provide leading edge RF components with relatively short design cycles for a wide range of consumer applications." Company News Release

Infineon Introduces Power Modules for Hybrid Vehicles
CompoundSemi News Staff

October 17, 2006...Infineon AG of Munich, Germany, showcased its new line of electronic power modules for hybrid electric vehicles (HEV) motor drive systems at the Convergence trade show in Detroit, Michigan USA. Infineon says the design of the HybridPACK1 and HybridPACK2 power modules uses 30 percent less semiconductor area to achieve the required power rating and therefore reduces the cost and complexity of HEV inverter systems. Infineon also says their systems reduce power losses by one fifth. The company contends that this enables simpler cooling systems.

The company says that the module is based on the its Trench FieldStop IGBT (Insulated Gate Bipolar Transistor) and Emcon diode technology. Infineon contends that for mild hybrid inverter applications, the flat copper base-plate combined with its ceramic substrate and Infineon’s special wire-bonding process improves lifespan related to thermal cycling by a factor of 3 and lifespan related to power cycling reliability by a factor of 2.

Infineon says HybridPACK2, for full hybrids, offers the industry’s smallest footprint of only 9.2 cm x 20.2 cm for a 800A/600V six-pack module, approximately a quarter smaller than today’s current solutions. According to the company, the pin-finned aluminum silicon carbide (AlSiC) base plate in HybridPACK2 enhances thermal performance and increases reliability. The full hybrid engine provides energy for mid-distance driving such as city traffic. Company News Release

TDI Demonstrates Quantum Well Fabrication With HVPE
CompoundSemi News Staff

October 12, 2006...TDI of Silverspring, Maryland USA, reported its successful demonstration of fabrication of gallium nitride (GaN) quantum well (QW) structures using novel hydride vapor phase epitaxy (HVPE). TDI pointed out that quantum well structures are critical components in LEDs and laser diodes. TDI said it was able to not only produce QWs, which are made with very thin layers, the company was also able to fabricate nanoscale multi-layer structures. TDI also pointed out that multi-layer structures with nanometer-scale layers are important for reducing defects and controlling strain in GaN-based materials, to improve doping, and to open new device possibilities.

TDI president and CEO, Vladimir Dmitriev, explained, “HVPE is TDI's core technology, which we use to produce a variety of GaN-based epitaxial products. TDI has perfected the growth of very thick GaN layers, which is typical of the HVPE process, along with very thin layers and multi-layer structures, in the same epitaxial process. This proprietary HVPE process opens up a completely new path for the formation of low defect substrate materials and device structures. We at TDI are very thankful to the Department of Energy (DoE) and Defense Advanced Research Project Agency (DARPA) for their continued support for these developments. TDI plans to release epitaxial products based on HVPE grown superlattice structures and quantum wells in early 2007."

Professor Subhash Mahajan who made material characterizations of the single and multiple quantum wells produced at TDI commented, “We never expected this technology to produce nanometer thick GaN layers and multi-layer structures. However, our transmission electron microscopy measurements performed on recent TDI's samples proved that it is achieved." Professor Michael Reshchikov, Virginia Commonwealth University, added: "This is definitely the first HVPE grown AlGaN/GaN structure that clearly shows a quantum well signature in photoluminescent characterization." Professor Michael Reshchikov, Virginia Commonwealth University, added, "This is definitely the first HVPE grown AlGaN/GaN structure that clearly shows a quantum well signature in photoluminescent characterization."

TDI indicated it will report these results on HVPE grown GaN-based quantum well structures at the International Workshop on Nitride Semiconductors 2006, October 22 - 27, 2006 in Kyoto, Japan. The company said it will also feature these recent epitaxial products including MQW epitaxial wafers at the workshop's exhibition. Company News Release

sp3 Diamond Technologies and Ceramics Process Systems Form Partnership
CompoundSemi News Staff

October 13, 2006...sp3 Diamond Technologies, a supplier of DiaTherm diamond heatspreaders headquartered in Santa Clara, California USA, reports it has made a strategic partnership with Ceramics Process Systems, a maker of aluminum silicon carbide (AlSiC) thermal management and packaging solutions. According to sp3 the two companies are partnering to provide AlSiC packages incorporating diamond pins.

sp3 said the new packages provide extreme thermal conductivity that allows increased device power and improves reliability in devices such as graphics processors, transportation power modules, and military communication components. sp3 indicated that the packages have high thermal conductivity (1,200 W/m-K) paths and a tailored, low coefficient of thermal expansion (CTE). Grant Bennett, President of CPS. “Diamond has been talked about for a long time as a potential thermal management product, having obvious benefits but a price tag associated with it. Through this partnership, we are able to deliver a package that offers all the benefits of diamond heat spreaders in a cost-effective manner.” sp3 News Release

Two LED Makers Place Repeat Orders for Aixtron MOCVD Reactors
LIGHTimes Staff

October 11, 2006...Aixtron has received orders from two different LED Makers for its MOCVD reactors. Aixtron’s most recent order comes from Visual Photonics Epitaxy Co. Ltd. (VPEC) of Taiwan. VPEC placed the order for two of Aixtron’s AIX 2600 G3 systems in the third quarter of 2006. Aixtron also received an order from SemiLEDs for its AIX 2600G3 HT system, with a 24x2-inch configured reactor. According to Aixtron, the new MOCVD tools can be configured for 12x4-inch or 7x6-inch wafers for the production of HBTs and HEMTs. The new system can also be configured for 49x2-inch wafers for the production of power LEDs (those requiring a forward voltage of 350 mA or more). Aixtron said it will install the new systems at the Visual Photonics' state-of-the-art manufacturing facility in Ping-Jen City, Taoyuan, Taiwan. VPEC will be using the systems to increase its current epitaxial wafer production capacity. Content continues for LIGHTimes SecondPage members...

Bell Labs, GaN Researcher to Be Awarded Two Young Investigator Awards
CompoundSemi News Staff

October 10, 2006...Bell Labs, the research and development branch of Lucent Technologies, reported that Hock Ng, one of the company’s material scientists, has been selected to receive two Young Investigator Awards for his pioneering work in gallium nitride research using molecular beam epitaxy. The North American Molecular Beam Epitaxy (NAMBE) has named Dr. Ng the first recipient of its Young Investigator Award. The Award will be given at the NAMBE conference at Duke University on October 8-11. Dr. Ng reportedly has also won the Charles W. Tobias Young Investigator Award of The Electrochemical Society, which will be presented at the organization’s international meeting to be held on October 29 - November 3 in Cancun, Mexico.

Ng’s list of impressive accomplishments includes: having 9 patents awarded or pending, publishing more than 45 journal articles, 3 book chapters, and 30 conference papers. He holds bachelor's, master's and Ph.D. degrees in electrical engineering from Boston University. He joined Bell Labs in 1999. He is a senior member of the Institute of Electrical and Electronic Engineers, member of the Materials Research Society, Electrochemical Society, American Physical Society and American Vacuum Society. He was selected to participate in the 2004 National Academy of Engineering's Frontiers of Engineering Symposium as one of the nation's top young engineers under 45. He was also awarded the 2003 Snell Premium by the Institute of Electrical Engineers (IEE) U.K. Bell Labs News Release

Our news features are reported by the CompoundSemi News staff writers.
For submissions or content suggestions, you can contact us using
editor -at - compoundsemi.com
For more information and to reserve promotion space contact
Info7 -at - compoundsemi.com
or call +1 (512) 257-9888

Sponsored Links
     
Commentary & Perspective...

Where to Go for Knowledgeable Nitride Market Research

October 17, 2006...One of the things we're especially proud of here at CompoundSemi News is an ability to field questions about our industry and point inquiring minds in the right direction. (And you can't believe some of the far out questions we get!) Answers-R-Us. If we don't have the right answer, we usually know who does. Like a wise person once pontificated... "the right answer is just two phone calls away." Now days, it's often just two "clicks" away, thanks to the Internet.

One of the questions we frequently field is... "Where do I go to get good, reliable market research information?" And most often the inquiring mind is wanting specific information about everyone's current most favorite wide bandgap compound semi starting material, Gallium Nitride (GaN)... also known to many within the field as simply "nitrides" since there are a growing number of varied flavors within the nitride family. GaN R&D gurus originally referred to the sector as Group III Nitrides, or Group III-N (for nitrogen v.s. nitrides) but I'm not sure if even the purists stick to that anymore. There's no need to dig into the Periodic Table of Elements though... simply say "GaN" (as in "can") and anyone in the compound semi field will know what you mean.

To pre-empt future calls on this specific topic, I thought a column pointing people in the direction of the latest recommended studies for sale that cover the the GaN field might be in order. While we ourselves do not do market research here at CompoundSemi Online Inc. (news, online directories, conferences, yes! Market research, no!) we certainly know the folks who do. I point you to two especially reliable sources in this column: Strategies Unlimited of Mountain View, California USA and a study from the people at IOP's Compound Semiconductor magazine based in Bristol, UK. First, Strategies Unlimited's, because they've been at this the longest.

PennWell Publishing's Strategies Unlimited market research firm has been doing formal forecasts on the GaN market for the past nine years and they issue a fresh, totally comprehensive update every two years. They have two current GaN-related studies out now, both under the direction of Bob Steele, who remains the foremost GaN market research expert. Their fourth edition, Gallium Nitride 2005 - Technology Status, Applications, and Market Forecasts was issued in March of 2005, so we can expect the next edition in the spring of 2007. These reports, the principal author of which continues to be Hank Rodeen, who has been lending his technical expertise on GaN to Strategies since 1997, cover the status of worldwide technology developments and markets for gallium nitride optoelectronic and electronic devices. Their other study, also spearheaded by Hank, was released this September, titled: Substrates for GaN Based Devices: Performance Comparisons and Market Assessment

Just to keep this all in perspective from the get-go, Strategies Unlimited reported in March of 2005 that "Having achieved a worldwide device market of $3.2 billion in 2004, gallium nitride technology continues to be one of the biggest success stories in compound semiconductors. Although high-brightness LEDs dominate the market currently, gallium-nitride-based laser diodes and electronic devices are in the early stages of market growth and will achieve substantial volumes in the next five years The total market for all types of gallium nitride devices is forecast at $7.2 billion in 2009. As of early 2005, 232 companies were participating in gallium nitride production or development, and 394 universities and research centers were involved in gallium nitride R&D. These worldwide figures represent an increase of 26% and 35%, respectively, since the publication of Strategies Unlimited's previous gallium nitride report in June 2003." No wonder people want to learn about GaN I imagine the 2007 update will see continued expansion and probably some significant consolidation.

Strategies' GaN substrate study evidently updates much of the above and looks at new technology developments, especially those that have taken place since 2004, covers present high-profile R&D activities, profiles industrial suppliers, gets into the various government support programs going on, looks at major and emerging applications extends the market forecast by application and device type through 2010. At our next Compound Semi Vision conference we'll try and get Bob Steele and the other analysts at Strategies Unlimited to look even further into the future and try and come up with some longer term forecasts. 5 and 10 years out for materials and machine people isn't too much to ask, and that's the emphasis for our annual CS Vision get-together, which matches a number of analysts for each of the sectors we cover in these pages: communications, solid state lasers, high efficiency solar cells, high temp/high power devices, and advanced LEDs. (Note that CS Vision will be held early in June, 2007 and will be back on its own in Dallas)

IOP's Compound Semiconductor magazine staff, under the editorship of Michael Hatcher, are also very in tune with what's going on in GaN, and especially the hottest current compound topic, the GaN electronics market. IOP's CS mag people, under a project name of Technology Tracking (a partnership between Europe's QinetiQ and the Institute of Physics Publishing, i.e. IOP) issued a study in January of this year called Emerging Markets for GaN Electronics. As the promotion aptly points out, "the last three years has witnessed impressive progress in the performance of electronic devices based on gallium nitride (GaN). GaN-based devices are now living up to their potential for delivering high-power performance over a range of frequencies, and are already appearing in the technology roadmaps of aerospace and defense contractors. However, more widespread adoption of GaN-based technology depends crucially on the cost, which in turn depends on the availability of high-volume manufacturing processes." The report includes indepth analysis of the technical and commercial strategies being pursued by GaN manufacturers as they seek to develop cost-effective solutions for mass-market applications such as wireless basestations, the emerging WiMAX market, and satellite communications.

The Technology Tracking GaN electronics report covers both the technology and commercial drivers at play in the market sectors being targeted by GaN manufacturers, it looks at the various material choices including the different substrate technologies being exploited and their impact on cost and performance. It goes into the technology innovations needed to ensure long-term reliability of GaN devices, and the market evolution, looking at how continuing technical advances will impact on future market growth. It also profiles the leading developers of GaN electronics.

So there you have. The right answer to where to go for knowledgeable nitride market research is, indeed, only a couple of clicks away. Just hit the hotlinks above, and there you have it!

If you have news or views to share about the compound semiconductor, LED or solid state lighting industries
contact our Publisher, Tom Griffiths
His direct tel in Austin is +1-512-257-9888

Current & Recent Company
News Releases

All site format, content and technology copyright 2001-2011 by CompoundSemi Online, Inc.

Static links to news articles, suitable for search engines, can be found at http://www.compoundsemi.com/news/searcharchive/.