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October 16, 2006...Fairchild Semiconductor, a power electronics company of South Portland, Maine
USA, has reportedly lost the first phase of a jury trial for infringement against
Power Integration. The jury ruled that Fairchild Semiconductor willfully infringed
four patents asserted by Power Integrations and awarded approximately $34 million
in damages. Despite this, Fairchild says it will ultimately prevail in the lawsuit,
and it added that the second phase of the three phase trial has not yet begun.
Fairchild said it is disappointed by the verdict in the first phase of the trial,
and it contends that a jury has not yet heard the company’s defense that
the patent claims are invalid. Fairchild also said it will continue to offer
its full line of pulse width modulation (PWM) products.
The trial was divided into three phases. The first phase was on infringement
and the willingness of infringement. The second phase of the trial , scheduled
to begin Dec. 4 before a different jury, will rule on the validity of the Power
Integrations’ patents being asserted. The enforceability of the asserted
patents will be ruled on in the third phase of the trial with yet another jury.
To win the jury’s recommended damages, court must rule that Power Integrations’
asserted patents are both valid (a claim to be evaluated in phase two of the
trial) and enforceable (ruled on in phase three). Fairchild
News Release
In April Fairchild brought a counter patent infringement lawsuit against Power
Integrators for infringement of US patent no. 5,264,719.
Tom Beaver, Fairchild's executive vice president for worldwide sales and marketing,
said at the time, “…Fairchild is asserting a patent that pre-dates
Power Integrations' patents by at least fifteen months.” (Ref: April
2006 Coverage). The litigation between the two companies began in October
2004 Power Integrations Files Patent-Infringement Suit against Fairchild Semiconductor.
(Ref: Oct.
2004 Power Integrations News Release). Solar Power 2006 Conference and Expo Kicks Off in San Jose Scott McMahanOctober 16, 2006...The Solar Power 2006 Conference and Expo opened today in San Jose, California
USA.
The conference, which is reportedly the largest business to business solar power
conference, is organized by the Solar Electric Power Association and the Solar
Energy Industries Association. (Ref: Solar
Power 2006 web site). The location of the conference is a fitting tribute
for a state that has taken the lead in alternative energy and environmental
concerns. Over 4000 attendees and more than 160 companies are expected to exhibit.
California Governor Arnold Schwarzenegger in August passed what was dubbed the
‘Million Solar Roofs initiative.’ It requires developers who make
over 50 new single-family homes to offer the option of a solar energy
system to all of them by January 1, 2011. (Ref:
Governor News Release).
In late September Governor Schwarzenegger passed legislation to reduce greenhouse
gas emissions within the state. The law is part of the goal of reducing greenhouse
gas emissions to 1990 levels by 2020, a reduction of about 25 percent. (Ref:
CBS
news coverage). Thin film cells continue to hold promise in terms of efficiency.
Emcore and Heliovolt are two important players in this arena. (Ref: May
Editorial Coverage). However, silicon still has the edge in cost per watt.
Kycera and SunPower announced independently that they have made major breakthroughs
in solar energy technology, according to an EE Times article.
Japan’s Kycera announced that it has achieved a new world record
of 18.5 percent energy conversion efficiency for a 15- x 15-cm multicrystalline
silicon solar cell. SunPower claimed 22 percent efficiency for single crystalline
silicon solar cells. Thin film solar cell maker, Heliovolt claims that its manufacturing process allows
CIGS (Copper Indium Gallium Diselenide) solar cells to be produced in a way that makes the technology economical
compared to silicon solar cells. Overall, it is difficult to tell how the solar market
will play out, but California will likely be a big part of it. Sirenza Begins Volume Production of RF Receiver for Satellite CompoundSemi News StaffOctober 17, 2006...Sirenza Micro Devices announced the production of a high performance receiver
for satellite radio. The S52 20077 reportedly converts signals from radio frequency
(RF) to digital baseband. "Sirenza's engineering group collaborated
closely with SIRIUS on the radio development," stated Richard Bay-Ramyon,
strategic business unit director of broadband and consumer products at Sirenza
Microdevices.
"The S520077, utilizing IBM's advanced silicon germanium semiconductor
process technology, is one of the most highly integrated RF ICs developed to
date by Sirenza," stated Robert Van Buskirk, president and CEO of
Sirenza Microdevices. "Sirenza's design and production capabilities
support an increasing customer demand for higher levels of RF component integration.
This new product is a good example of Sirenza's ability to provide leading edge
RF components with relatively short design cycles for a wide range of consumer
applications." Company
News Release Infineon Introduces Power Modules for Hybrid Vehicles CompoundSemi News StaffOctober 17, 2006...Infineon AG of Munich, Germany, showcased its new line of electronic power
modules for hybrid electric vehicles (HEV) motor drive systems at the Convergence
trade show in Detroit, Michigan USA. Infineon says the design of the HybridPACK1
and HybridPACK2 power modules uses 30 percent less semiconductor area to achieve
the required power rating and therefore reduces the cost and complexity of HEV
inverter systems. Infineon also says their systems reduce power losses by one
fifth. The company contends that this enables simpler cooling systems.
The company says that the module is based on the its Trench FieldStop IGBT
(Insulated Gate Bipolar Transistor) and Emcon diode technology. Infineon contends
that for mild hybrid inverter applications, the flat copper base-plate combined
with its ceramic substrate and Infineon’s special wire-bonding process
improves lifespan related to thermal cycling by a factor of 3 and lifespan related
to power cycling reliability by a factor of 2.
Infineon says HybridPACK2, for full hybrids, offers the industry’s smallest
footprint of only 9.2 cm x 20.2 cm for a 800A/600V six-pack module, approximately
a quarter smaller than today’s current solutions. According to the company,
the pin-finned aluminum silicon carbide (AlSiC) base plate in HybridPACK2 enhances
thermal performance and increases reliability. The full hybrid engine provides
energy for mid-distance driving such as city traffic. Company
News Release TDI Demonstrates Quantum Well Fabrication With HVPE CompoundSemi News StaffOctober 12, 2006...TDI of Silverspring, Maryland USA, reported its successful demonstration of
fabrication of gallium nitride (GaN) quantum well (QW) structures using novel
hydride vapor phase epitaxy (HVPE). TDI pointed out that quantum well structures
are critical components in LEDs and laser diodes. TDI said it was able to not
only produce QWs, which are made with very thin layers, the company was also
able to fabricate nanoscale multi-layer structures. TDI also pointed out that
multi-layer structures with nanometer-scale layers are important for reducing
defects and controlling strain in GaN-based materials, to improve doping, and
to open new device possibilities.
TDI president and CEO, Vladimir Dmitriev, explained, “HVPE is TDI's core
technology, which we use to produce a variety of GaN-based epitaxial products.
TDI has perfected the growth of very thick GaN layers, which is typical of the
HVPE process, along with very thin layers and multi-layer structures, in the
same epitaxial process. This proprietary HVPE process opens up a completely
new path for the formation of low defect substrate materials and device structures.
We at TDI are very thankful to the Department of Energy (DoE) and Defense Advanced
Research Project Agency (DARPA) for their continued support for these developments.
TDI plans to release epitaxial products based on HVPE grown superlattice structures
and quantum wells in early 2007."
Professor Subhash Mahajan who made material characterizations of the single
and multiple quantum wells produced at TDI commented, “We never expected
this technology to produce nanometer thick GaN layers and multi-layer structures.
However, our transmission electron microscopy measurements performed on recent
TDI's samples proved that it is achieved." Professor Michael Reshchikov,
Virginia Commonwealth University, added: "This is definitely the first
HVPE grown AlGaN/GaN structure that clearly shows a quantum well signature in
photoluminescent characterization." Professor Michael Reshchikov, Virginia
Commonwealth University, added, "This is definitely the first HVPE
grown AlGaN/GaN structure that clearly shows a quantum well signature in photoluminescent
characterization."
TDI indicated it will report these results on HVPE grown GaN-based quantum
well structures at the International Workshop on Nitride Semiconductors 2006,
October 22 - 27, 2006 in Kyoto, Japan. The company said it will also feature
these recent epitaxial products including MQW epitaxial wafers at the workshop's
exhibition. Company
News Release sp3 Diamond Technologies and Ceramics Process Systems Form Partnership CompoundSemi News StaffOctober 13, 2006...sp3 Diamond Technologies, a supplier of DiaTherm diamond heatspreaders headquartered
in Santa Clara, California USA, reports it has made a strategic partnership
with Ceramics Process Systems, a maker of aluminum silicon carbide (AlSiC) thermal
management and packaging solutions. According to sp3 the two companies are partnering
to provide AlSiC packages incorporating diamond pins.
sp3 said the new packages provide extreme thermal conductivity that allows
increased device power and improves reliability in devices such as graphics
processors, transportation power modules, and military communication components.
sp3 indicated that the packages have high thermal conductivity (1,200 W/m-K)
paths and a tailored, low coefficient of thermal expansion (CTE). Grant Bennett,
President of CPS. “Diamond has been talked about for a long time as
a potential thermal management product, having obvious benefits but a price
tag associated with it. Through this partnership, we are able to deliver a package
that offers all the benefits of diamond heat spreaders in a cost-effective manner.”
sp3
News Release Two LED Makers Place Repeat Orders for Aixtron MOCVD Reactors LIGHTimes StaffOctober 11, 2006...Aixtron has received orders from two different LED Makers for its MOCVD reactors.
Aixtron’s most recent order comes from Visual Photonics Epitaxy Co. Ltd.
(VPEC) of Taiwan. VPEC placed the order for two of Aixtron’s AIX 2600
G3 systems in the third quarter of 2006. Aixtron also received an order from
SemiLEDs for its AIX 2600G3 HT system, with a 24x2-inch configured reactor.
According to Aixtron, the new MOCVD tools can be configured for 12x4-inch
or 7x6-inch wafers for the production of HBTs and HEMTs. The new system can
also be configured for 49x2-inch wafers for the production of power LEDs (those
requiring a forward voltage of 350 mA or more). Aixtron said it will install
the new systems at the Visual Photonics' state-of-the-art manufacturing facility
in Ping-Jen City, Taoyuan, Taiwan. VPEC will be using the systems to increase
its current epitaxial wafer production capacity. Content continues for LIGHTimes SecondPage members... Bell Labs, GaN Researcher to Be Awarded Two Young Investigator Awards CompoundSemi News StaffOctober 10, 2006...Bell Labs, the research and development branch of Lucent Technologies, reported
that Hock Ng, one of the company’s material scientists, has been selected
to receive two Young Investigator Awards for his pioneering work in gallium
nitride research using molecular beam epitaxy. The North American Molecular
Beam Epitaxy (NAMBE) has named Dr. Ng the first recipient of its Young Investigator
Award. The Award will be given at the NAMBE conference at Duke University on
October 8-11. Dr. Ng reportedly has also won the Charles W. Tobias Young Investigator
Award of The Electrochemical Society, which will be presented at the organization’s
international meeting to be held on October 29 - November 3 in Cancun, Mexico.
Ng’s list of impressive accomplishments includes: having 9 patents awarded
or pending, publishing more than 45 journal articles, 3 book chapters, and 30
conference papers. He holds bachelor's, master's and Ph.D. degrees in electrical
engineering from Boston University. He joined Bell Labs in 1999. He is a senior
member of the Institute of Electrical and Electronic Engineers, member of the
Materials Research Society, Electrochemical Society, American Physical Society
and American Vacuum Society. He was selected to participate in the 2004 National
Academy of Engineering's Frontiers of Engineering Symposium as one of the nation's
top young engineers under 45. He was also awarded the 2003 Snell Premium by
the Institute of Electrical Engineers (IEE) U.K. Bell
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