Swiss Researchers Report High Quality Thin GaN HVPE on Saphire Without MOCVD Step CompoundSemi News StaffJuly 3, 2006...Researchers at the Laboratory of Advance Semiconductors
for Photonic and Electronics in Lusanne, Switzerland, report demonstrating
growth of high quality gallium nitride (GaN) templates on sapphire substrates
using hydride vapor phase epitaxy (HVPE). They were able to eliminate the costly
MOCVD growth step typically used in HVPE deposition. According to the findings
published in June 12 2006 issue of Applied Physics Letters (88,
241914, 2006), the researchers were able to grow thin GaN layers (d=8 µm)
on c-plane sapphire substrates with dislocation densities lower than 2×108
cm–2. The group describes, “a two-step process similar to that of
metal organic vapor phase epitaxy.” The article sites ex situ surface
preparation and nucleation layer thickness to be among the most critical factors
to consider in attempting to grow high quality GaN epi layers. The surface preparation
included cleaning the sapphire layer in hydrogen before exposing it to ammonia
gas at 1045 degrees C for 4 minutes.
The group reportedly used a commercially available Aixtron reactor to achieve
the desired HPVE growth thickness. The researchers contend that ex situ surface
preparation combined with GaN growth of the proper thickness allows control
of polarity and dislocation density. The researchers also site the use of in
situ reflectivity monitoring as another technique of optimizing GaN growth.
The less expensive growth technique holds promise in the production of transistors,
lasers, and LEDs. While the group does not have plans to commercialize the technology,
a number of companies have shown interest. TriQuint, Nitronex, and sp3 to Develop GaN on Silicon-on-Diamond Substrates CompoundSemi News StaffJuly 3, 2006...TriQuint, a compound semiconductor company focused on radar development, and
Nitronex a specialist in growing gallium nitride (GaN) on silicon, will collaborate
with sp3 as part of Phase II of a Small Business Innovative Research grant from
the US Missile Defense Agency. Sp3 Diamond Technologies has reportedly won a
Phase II Small Business Innovative Research (SBIR) II grant for 100mm GaN on
silicon-on-diamond (SOD) development from the US missile defense agency for
radar transmit and receive modules. The research will also be focused on documenting
the process and performing initial reliability testing for the GaN on SOD substrates.
The award comes after the completion of Phase I in which sp3 developed 100mm
SOD wafers with a GaN top surface, in addition to extensive modeling and performance
testing. The company was able to demonstrate a junction temperature drop of
80 degrees Kelvin even with an increase in power of 37 percent. Nitronex which
specializes in GaN on silicon technology will work with sp3 to fabricate the
GaN material on the SOD substrate. TriQuint will also be modeling the technology
for MMIC development. sp3
New Release IQE Wins International Safety AwardJuly 3, 2006...Merchant epiwafer supplier, IQE Europe Ltd. of Cardiff, UK, was awarded the
International Safety Award from the independent panel, the British Safety Council
for promoting health, safety, and the best practices for the environment. Reportedly,
only companies with exceptional safety records, good safety policies, plans
and commitment to health and safety at the highest board level can attain the
award. Prime Minister Tony Blair added his support: "I send my congratulations
to all those organizations being presented with an award by the British Safety
Council. These awards recognize the success that these organizations and their
employees have achieved in their pursuit of excellence in the management of
health, safety and environmental matters. The Government would like to place
on record its application of the support given by the Council in raising awareness
of the benefits that effective health, safety and environmental management brings
to business, employees and the environment." Company
News Release
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Vertilas Introduces VCSEL ArrayJuly 3, 2006...Vertilas of Garching, Germany, a maker of vertical-cavity surface-emitting
laser (VCSEL) diodes, has announced a 3 X 3 array of VCSELs. The array generates
a total output power of 32 mW, with a maximum electrical to optical conversion
efficiency of 22 percent. It uses the company’s Buried Tunnel Junction
(BTJ)-design for each VCSEL to reduce the heat dissipation. According to the
company, it therefore multiplies the advantages of a single VCSEL. Company
News Release SMI Converts Another Nitride MOCVD Machine to OxideJuly 3, 2006...Structured Materials Industries (SMI) announced another of its unique conversions
where the company was able to take an MOCVD system and change it to allow depositing
of zinc oxide films. This time the company was able to do this with an Emcore
D180 nitride reactor. The company has also previously been successful in converting
Thomas Swan, and Emcore reactors among others. According to company president
and CEO, Gary S. Tompa, the technology allows researchers and producers to address
new MOCVD markets without a costly new MOCVD machine. Company
News Release Companies Scramble to Beat ROHS July 1st Deadline CompoundSemi News StaffJune 28, 2006...Optical component maker, Bookham and LED color control pioneer, Color Kinetics, have both announced that they are now fully ROHS compliant.
The ROHS directive (similar to California’s Title 22) bans the use of
certain hazardous substances, including lead, mercury, cadmium, hexavalent chromium,
polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), in
electrical and electronic equipment sold into Europe from July 1, 2006. An independent
audit by the British Standards Institute (BSi) confirmed that Bookham has reached
ROHS compliance ahead of the legal deadline of July 1, 2006. Bookham
News Release, Color
Kinetics News Release. These two companies will not likely be the only last
minute ROHS compliance confirmations from companies in the compound semiconductor and solid state lighting
fields. Nanosolar Secures $75 Million in Funding; Plans to Build New Factory Scott McMahanJune 28, 2006...Nanosolar, a company originally funded by the founders of Google, has secured
$75 million in series C preferred stock financing. The funding adds to the recently
secured government factory subsidies of about 10.5 million. The company says
its total cash position (including non-debt cash equivalents) is just above
$100 million. Previous investors include: MDV-Mohr Davidow Ventures, Benchmark
Capital, and Onpoint, and Japanese trading leader Mitsui. SAC Capital, GLG Partners,
Swiss Re, Grazia Equity, Christian Reitberger, Capricorn Management, and Beck.
Klaus Tschira (via FirstVentury) and Dietmar Hopp, the founders of SAP, also
took part in the new funding round.
The company, which is currently in pilot production at a facility in Palo Alto,
California, says it plans to use the funding to start building a solar cell
factory with an output of solar cells totaling 450MW or about 200 million solar
cells per year. Nanosolar is looking at San Francisco as the location of the
new factory. The company says it uses thin film, CIGS (copper indium gallium
diselenide) technology with a wide array of innovations in processing and manufacturing
to create a high efficiency thin film solar cells that are very affordable.
Nanosolar indicated that its two years in manufacturing and process technology
development have paid off with innovation and advances in nanostructured components,
printable semiconductors, rapid thermal processing, low cost substrates, roll-to-roll
processing, and fast assembly. The company plans to make to eventually have
a panel fab in Berlin, Germany. Company
News Release (regarding funding), Company
News Release (regarding new factory plans) Matsushita Develops GaN Vertical Transistor for High-Power Switching CompoundSemi News StaffJune 28, 2006...Matsushita Electric (commonly known as Panasonic) has reported developing a
gallium nitride (GaN) transistor with a vertical structure for high-power switching
devices. According to the company, the unique design dramatically reduces the
chip area by about one-eighth of conventional planar devices. Panasonic also
contends that the transistor successfully suppresses current collapse that is
often observed in GaN-based transistors. Current collapse occurs mainly when
charges trapped at the surface reduce the drain current at high voltage operation.
The company says that the transistor has a submicron channel fabricated using
a novel self-aligned process, and it has the good pinch-off characteristics
that are required for power switching devices. Panasonic says it has filed seventeen
domestic and international patent applications relating to the device. The research
and development results have been presented at Device Research Conference 2006,
held at Pennsylvania State University, Pennsylvania, U.S. from June 26 to 28,
2006. Company
News Release nLight President Named Ernst & Young Entrepreneur of the Year 2006 CompoundSemi News StaffJune 27, 2006...nLight of Vancouver, Washington USA, a maker of high-powered lasers, announced
that company president and CEO, Scott Keeney was named Ernst & Young Entrepreneur
of the Year 2006 for the Pacific Northwest region of the United States. According
to nLight, the award is given to outstanding entrepreneurs who are building
and leading dynamic and growing businesses. This year marked the 20th aniversery
of the gala event at the Westin Bellevue, June 23, 2006. “This honor
and award belongs to over 100 employees at nLight who have done a fantastic
job. Because of our great team, nLight leads the world in high-power semiconductor
lasers used in a variety of applications, including prostate surgery, entertainment
systems, and aircraft defense. We remain extraordinarily driven to continue
to grow. This is a tremendous honor,” said Keeney. As a Pacific Northwest award recipient, Mr. Keeney is eligible for consideration
for the Ernst & Young Entrepreneur of The Year 2006 national program. Award
recipients in several national categories, as well as the overall national Ernst
& Young Entrepreneur Of The Year award recipient, will be announced at the
annual awards gala in Palm Springs, California on November 18, 2006. The overall
national Entrepreneur of the Year award recipient is then considered for the
world event held in Monte Carlo. nLight
News Release Veeco and KOPTI Collaborate for SSL AdvancementJune 27, 2006...Veeco Instruments Inc. of Woodbury, New York USA, and Korea Photonics Technology
Institute (KOPTI) of Gwangju, South Korea, have reported entering into a collaborative
relationship for solid state lighting advancement. Under the terms of the agreement, Veeco
will ship its latest GaNzilla metal organic chemical vapor deposition (MOCVD)
tool used in the manufacture of HB-LEDs, and it will place key technical experts
and other process support at KOPTI's facility. Veeco indicated that the Veeco-KOPTI
site will be used for research and development, training, and demonstrations
for KOPTI's R&D efforts as well as those for other Korean HB-LED manufacturers.
Additionally, Veeco and its LED customers would be allowed to use KOPTI's LED
characterization and chip fabrication facilities. The agreement also includes
potential sharing of solid state lighting technology and intellectual property created as a result of this collaboration. Content continues for LIGHTimes SecondPage members... Our news features are reported
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