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June 5, 2006...The Advanced Technology Institute
(ATI) at the University of Surrey, and its partner for plasma processing, a
deposition system maker, CEVP, have won
project funding to develop a tool to grow nanomaterials. The funding infusion
from South East England Development Agency (SEEDA) of £215,000 increases
the total project development capital to £450,000. The program’s
goal is to commercialize a device for mass producing carbon nanotube technology.
The organization says that it has created a promising prototype called NanoGrowth
which it hopes to develop into a “turnkey” tool for manufacturing
highly bespoke nanomaterials on 3-inch substrates. ATI hopes the tool will eventually
scale up to 12-inch substrates.
Chemical vapor disposition (CVD) requires temperatures above 700 degrees Celsius
to grow carbon nanotubes. NanoGrowth however, uses a plasma enhanced system
that allows significantly lower processing temperatures. ATI says that mass
production opens the door to a wide range of possible products and applications.
In addition to selling the NanoGrowth machine itself, the University and CEVP
hope to develop some carbon nanotube-based products. "SEEDA funding
will help us transform the prototype NanoGrowth machine into a world-beating
technology platform for nanomaterials," said Professor Ravi Silva,
lead investigator at the Advanced Technology Institute. "We are already
talking with multinationals about a range of high-tech products, and as well
as developing the tool, we are actively examining routes to create a spin-out
vehicle for this exciting technology." The Advanced Technology Institute
expects the benefits of the research and development project to extend to compound
semiconductors, solid-state lighting, and high-efficiency solar cells. CEVP
News Release
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SID Conference Gets Underway in San Francisco CompoundSemi News StaffJune 5, 2006...The Society for Information Display (SID) is putting on a conference in San
Francisco where companies will showcase the latest display technology from June
4-9. Presenters will discuss the latest advances in LCD displays, backlighting,
plasma displays, and organic light-emitting diode displays. Among the companies
we regularly cover: MOCVD equipment maker Aixtron, optical component company,
Bookham, optical component maker and test and measurement company, JDSU, micro-display pioneer Kopin,
and lighting company, Osram Sylvania will be exhibiting. (Ref: SID
web site). According to SID, the conference will have 250 exhibitors and a record 540 total papers-including 61 Invited Papers and
14 Distinguished Papers-will presented over four days by the top display experts
in the world. These will reportedly examine the entire gamut of the industry's
hottest topics. In what some industry watchers consider a sign of the switch to a new technology,
cold cathode fluorescent lamps (CCFLs) are not on the agenda. Not surprisingly,
LED backlighting will be among the presented topics. (Ref: SID
web site). TDI Hopes to Open the Door to More GaN Devices CompoundSemi News StaffJune 5, 2006...Technology and Devices International Inc.(TDI) of Silver Spring, Maryland USA,
hopes to fill the industry’s need for 4–inch substrates which have
a high-latice and thermal match with gallium nitride (GaN). TDI has reported
fabricating substrates of 4-inch diameter with a layer of aluminum nitride (AlN) on silicon carbide (SiC). The company says these substrates are ideal for group III materials. The group-III nitride
compound semiconductor material family includes gallium nitride (GaN), aluminum
nitride (AlN), indium nitride (InN) and their alloys TDI’s new product
is aimed at substrate applications for ultra high power AlGaN/GaN devices such
as high electron mobility transistors (HEMTs) and high frequency power amplifiers
for next generation of wireless communications. Other possible applications
include high power blue and ultra violet (UV) light emitters, light emitting
diodes (LEDs) and laser diodes (LDs). According to the company, the product
prototype consists of 10 microns thick of single crystal AlN film deposited
on a 4-inch SiC wafer. The company points out that the substrates provide both
the unique thermal conductivity of SiC and the exceptionally high intrinsic
electrical resistivity of AlN.
“Development of 4-inch semi insulating substrates for high power
GaN-based HEMTs has a long history and we are pleased to inform nitride community
and especially our customers that the first prototype of AlN-based 4-inch substrate
has been fabricated. The prototype was fabricated using proprietary stress control
technology and crystal growth equipment developed by TDI for deposition of thick
crack free AlN films,” stated Vladimir Dmitriev, President and CEO
of TDI. He added, “Our customers have been asking about 4-inch substrates
from the very introduction of the first 2-inch AlN-on-SiC wafers three years
ago followed by 3-inch product introduction a year ago. This new product will
allow our customers to use existing 4-inch device manufacturing lines, reduce
production cost and speed up commercialization of GaN devices. We plan to start
pilot production of 4-inch AlN-based substrates in a few months and make the
first product shipments in the last quarter of 2006.” Company
News Release
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Bookham Releases LED Multiplexer Module for RPTVs CompoundSemi News StaffJune 5, 2006...Bookham has released a modular multiplexer technology product called the ZoroLight LED
Multiplexer. It supports rear projection televisions RPTV and pocket
projectors that use LED illumination instead of conventional ultra high performance
(UHP) lamps. The company has designed optical thin film filters required for
multiplexing into a package that it says is more compact and optically efficient
than conventional solutions. ZoroLight multiplexes red, blue and green LED signals
to enable DLP (Digital Light Processor) projection devices. The module is designed
to requires minimum alignment during light engine assembly by customers. The
Bookham utilizes its patented AED (Advanced Energetic Deposition) automated
thin film optical coating technology to produce optical filters with ultra-low
defect levels and higher light throughput, tighter wavelength control, high
volume and low cost. Company
News Release Aixtron Completes Taiwanese Government Funded Project CompoundSemi News StaffJune 1, 2006...Aixtron Taiwan announced the successful completion of its first research and
development project entitled, “Manufacturing-Oriented Research Lab,”
the company’s first R&D project funded by the Taiwanese government.
The project was part of the program for multinational innovative R&D centers
in Taiwan. Prof. Dr. Michael Heuken, vice president of corporate research and
development at Aixtron and member of the Aixtron Taiwan Scientific Advisory
Board officially closed the project after the review meeting was held in Hsinchu,
Taiwan at the beginning of March.
Aixtron points out that Taiwan is the fastest growing market for nearly all
Aixtron technologies in Asia, and according to the Aixtron, the funded project
is starting point in the establishment of the company’s R&D Center
in Taiwan. Aixtron says it utilizes the research activity in Taiwan to strengthen
its market position and to maintain its leading role as technology driver. The
company reportedly increased its number of staff 270 percent over a three-year
period beginning at the end of 2002. Dr. Joe Yang, R&D Manager of Aixtron
Taiwan commented, “Local engineers and scientists were attracted by
the challenging scientific program that includes nanotechnology and recent materials
science subject matter. With the completion of the project they serve the Taiwanese
market better based on the scientific and technical results of the project.”
Aixtron reported several research achievements including the reduction of operating
costs in LED manufacturing and the development of red, blue, yellow, and even
white OLEDs with the unique OVPD production technology. Company
News Release Cree Distributor Sumitomo Agrees to $180 Million Order LIGHTimes StaffJune 1, 2006...Cree Inc., of Durham, North Carolina USA, reported that its Japanese distributor,
Sumitomo Corp., has agreed to purchase $180 million of Cree’s LED and
wafer products during the fiscal year ending June 2007. Cree, says that the
purchase is about 10 percent greater than what it expected from Sumitomo. Both
companies anticipate that purchases will be made across Cree’s full line
of wafer and LED chip products, including MegaBright, XBright, XThin, and EZBright
LEDs. Company
News Release Verigy Expects $16 to $18 Per Share for IPO CompoundSemi News StaffJune 1, 2006...Verigy, a wholly owned subsidiary and spin-off of Agilent, has set its initial
public offering at 8.5 million ordinary shares with a price of $16 to $18, according
to Reuters.
Agilent will own about 50 million ordinary shares or 85.5 percent, after the
IPO. Verigy told Reuters it expected to receive about $134 million in net proceeds
of from the IPO. The funds wll reportedly go towards repaying debt, general
corporate purposes, and paying costs from the separation from Agilent. Verigy
reported that for the three months ended Jan. 31, its net loss narrowed to $16
million from $45 million a year earlier, while revenue jumped to $170 million
from $79 million. Assuming the offering price is in the expected range of $16
to $18, the company will have an initial market capitalization of between about
$934 million and $1.053 billion. Verigy intends to list its stock on the Nasdaq
under the symbol "VRGY."
In other company news, Robert J. Nikl will become company CFO June 20. He previously
served as senior vice president and CFO of Fremont, California-based semiconductor
manufacturing equipment maker Asyst Technologies Inc. GCS Announces HFET Foundry Process CompoundSemi News StaffJune 1, 2006...Global Communication Semiconductors, Inc. (GCS), a compound semiconductor foundry
in Torrance, California USA, will begin offering its proprietary high linearity
HFET foundry process to address the high dynamic range requirement of base station
driver amplifiers. "GCS has a number of proprietary FET technologies
including 0.5um and 0.25um PHEMT processes. Our 0.5um high performance HFET
process is the latest addition to the FET family. With a breakdown voltage of
16V with a pinch off voltage of -2.0V, this technology was developed specifically
with high linearity in mind and it is ideal for linear amplifiers that require
high dynamic range," commented Jerry Curtis, CEO of GCS. "As
a performance example at 2.0 GHz, when biased at 8V and 50% Idss, our 1.2mm
HFET device can achieve an output power of 28.1 dBm with a Third Order Intercept
(TOI) point of 48.5 dBm. With a 20.4 dB linear figure of merit, a difference
between TOI and P1dB, our HFET is by far one of the most linear foundry processes
ever available. Similar linear performance can also be achieved at 5.0V bias.
The superior linearity makes it well suited for use in both analog and digital
wireless communication infrastructure and subscriber equipment including 3G,
cellular, PCS and fixed wireless system," continued Mr. Curtis. The new foundry service adds to the company’s wide range of foundry services
for the wireless telecommunication and high-speed networking industries. The
company offers foundry services for InGaP and InP HBT, power and switch PHEMT
processes. GCS also provides foundry services for various optoelectronic components
such as PIN PD, PIN POD Array, APD, VCSEL and lasers used in the fiber optic
communication market. Company
News Release Cree Releases Samples of GaN HEMTs for WiMaxMay 30, 2006...Cree, Inc. of Durham, North Carolina USA, has announced sample availability of its new 15-watt packaged gallium nitride (GaN) high electron mobility transistor (HEMT) called the CGH35015. It is reportedly optimized for broadband wireless access and for WiMAX applications operating between 3.3 GHz and 3.9 GHz. According to Cree, GaN HEMTs offer higher linear power and improved efficiency performance over wider bandwidths than traditional technologies such as silicon LDMOS or GaAs. Company News Release
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