TriQuint Opens Doors to First GaAs E-D pHEMT FoundryDecember 18, 2003...TriQuint Semiconductor of Hillsboro,
Oregon USA treated CS Outlook
attendees earlier this week in Dallas, to an indepth update on why that company
is experiencing a definite upswing in business (See: TriQuint news
release updating their Q4 Guidance on Improved Outlook). Among
the company's initiatives is their recent announcement of the opening of TriQuint's
e high-volume TQPED pHEMT process as fabricated in their 150mm Oregon wafer
manufacturing facility. Company
news release. Details on this, and much more perspective on TriQuint, as
reported in person by their senior managers, will be in our next full issue
of CompoundSemi News. TriQuint President and CEO, Ralph Quinsey, was co-chair
of this year's Outlook event, serving in that capacity with Veeco VP, Dave Reamer.
And veteran industry catalyst, Dave McQuiddy, VP of TriQuint's Texas facility,
was honored at CS Outlook with
an industry "Pioneer Award". Stay tuned for details...
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Cree Reports Major GaN HEMT Power Achievements at CS OutlookDecember 18, 2003...Cree, Inc. of Durham, North Carolina USA
has publicly announced their achievement of a record CW power density of GaN
HEMTs. The Cree devices, which were developed in the company's Santa Barbara,
California research facility, and as reported in person by Cree developers at
the annual CS Outlook Conference
in Dallas earlier this week, produced a record CW power density of 32 W/mm and
55% power added efficiency (PAE) at 4 GHz. These same devices also produced
a CW power density of 30 W/mm and 50% PAE at a higher frequency of 8 GHz. Details
and more indepth perspective on this program will be posted in our next complete
issue of CompoundSemi News. Company
news release. Also at the Outlook meet in Dallas, Cree co-founders John
Palmour and Calvin Carter were present to receive their industry "Pioneer
Award. Stay tuned for details... Walter Schottky Institute Expands VCSEL Development with New Aixtron SystemDecember 18, 2003...The famed Walter Schottky Institute (WSI) which is a central institute of the
Technische Universität München (TUM) in Germany, has ordered a state-of-the-art
AIX 200/4 MOCVD system to help expand their exemplary work on VCSELs. Founded
in 1986 the WSI is focused to strengthen the interaction between basic physics
and semiconductor electronics research. With a total area of about 2400 m2 laboratory
and office space the WSI accommodates four research groups: Experimental Semiconductor
Physics I, Experimental Semiconductor Physics II, Semiconductor Technology,
and Theoretical Semiconductor Physics. The Semiconductor Technology group, headed
by Prof. Amann concentrates on VCSELs and edge-emitting lasers in the wavelength
region up to 10µm as well as millimeter wave devices. The WSI will utilize the
new system for their work on growing VCSEL layer structures that feature WSI's
unique Buried Tunnel Junction (BTJ) technology, and specifically, the Aixtron
tool, which is tailored as a InGaAl AsPSb material system, produces lasers with
a wavelength of 1.55µm to 2.0µm. Company
news release. Aixtron was the lead sponsor of the Outlook Conference, and Aixtron's Director of Marketing, Rainer Beccard, provided a very good Outlook
presentation. We'll provide more details on Rainer's outlook, so stay tuned...
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New Chinese-American Full Service Manufacturing Company FormedDecember 18, 2003...A new optical component company called Photop
Technologies, Inc. was recently announced. Comprised of the combination
of four merged entities: Koncent, Suwtech, Sandgy, and Microlattice, Photop
is projecting itself as a full service supplier to various application sectors
addressed by the compound semi industry, with base operations in both Fuzhou, Fujian
China and Milpitas, California USA. The combined company will debut as a 1000
employee strong global company at the upcoming
Photonics West show in San Jose, California in January. Initial product offerings
and services include: 1. Passive/Active components, devices and modules for
fiberoptic communication; 2. Diode pumped solid state green/infrared lasers
for laser display, entertainment, pointing and laboratory; 3. high precision
optical components and crystals for instruments, fiberoptic communication and
lasers and 4. compound semiconductor crystals (GaAs and InP) as substrates for
LED, LD and wireless communication components. According to Hongrui Wang, Chairman
of the newly formed Phototop, "Koncent, Suwtech, Sandgy and Microlattice
are well synergized in products, customer base and capability. In addition to
our current high quality and low cost products, we are building a leading photonics
manufacturing base for international customers by vertical integration of our
resources. As a global manufacturing partner, we are always ready to co-invest
production line together with our customers as well as establish dedicated production
line for our customers to protect customers' IP." Serving as CEO of the
new company is John Ling, and COO is Sunny Sun. Going into the opto arena, Photop
brings with it more than 40,000 sq. meters of advanced semi facilities and 300
engineers as part of the 1,000 strong employee base. Full service contract manufacturing
capabilities for OEMs appears to be their initial strength. Complete details
as to what they offer and the facilities they have in place, plus their initial
rollout strategy are included in the company
news release and the company has published
a list of upcoming trade show appearances and booth numbers. Our news features are reported
by the CompoundSemi News staff writers.
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