InP Startup T-Networks Scores Additional $30.6M Venture BackingApril 24, 2002...T-Networks of Allentown,
Pennsylvania USA, which in March introduced
its initial InP optical modulators (see our coverage, Mar
14 issue), has announced that it has received $30.6 million in additional
capital, earmarked for continued production development, organizational development
and the establishment of the company's sales infrastructure. The company was
founded in July of 2000, basing its charter on the practical innovation of InP
materials. The series B funding includes reinvestments by Greylock, Intel Capital,
Sequoia Capital, US Venture Partners, and Vitesse Semiconductor, in addition
to new investor TL Ventures. Included on the T-Network board is longtime compound semi catalyst, Lou Tomasetta, co-founder, President and CEO of Vitesse. In today's tight venture environment, how the capitalization
came about is deemed significant. “T-Networks impresses us with the speed
of their progress in key areas: assembling a first-rate team, building a top-line
development and production facility, successfully applying a systems approach
to optical component technology, and delivering that technology to the market,”
explained one of the general partners at US Ventures, Winston S. Fu, Ph.D. “New
strategies are needed to address the economic and technical challenges faced
in telecommunications, and T-Networks is demonstrating a level of innovative
thinking that we are confident will succeed in helping to move this industry
forward.” Press
release
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New Focus Sells Passive Line to Finisar for $12.8 MillionApril 25, 2002...Finisar Corporation, a company of approximately 1,200 and one which has acquired
various compound semi industry players, has signed a definitive agreement to
purchase the passive optical component product line from New Focus Inc. (NUFO),
Santa Clara, California USA, a company that employs about 25 people, for $12.8
million. Under the terms of the agreement, Finisar will acquire the physical
assets and intellectual property associated with New Focus' passive line. The
physical assets include development and production equipment as well as certain
raw material and finished goods inventories. New Focus will assign to Finisar
the intellectual property rights to fifty pending and issued patents, proprietary
know-how, and trademarks associated with its passive fiber optic components
and New Focus will retain exclusive rights for use of this intellectual property
outside the field of fiber optic communications. Further details are included
in the companies' comprehensive joint press
release. AXT Launches 6 Inch InP Substrate LineApril 25, 2002...Samples of AXT's new six inch InP VGF substrates are being readied for June
quarter shipments. "Our VGF technology allows us to produce large diameter
substrates with excellent uniformity and low defect density,'' claims Morris
Young, AXT's President and CEO, who is a pioneer in the VGF growth method (vs.
conventional LEC) Much of the industry has now moved to VGF substrate growth
technology. "AXT has always been at the forefront of compound semiconductor
substrate technology and our reward for pioneering new products has been market
share leadership in both gallium arsenide and indium phosphide large diameter
substrates. We are very pleased to announce this breakthrough and believe that
our products will continue to serve as the basis for many important technologies
in wireless and telecommunications infrastructure.'' InP-based semiconductor
devices provide especially high frequency electronic performance and are used
in applications in which other semiconductor materials, such as silicon and
GaAs are unable to perform. Demand is growing quickly for larger diameter InP
substrates as the number of InP-based device developers quickly expands. Target
applications are primarily 3G cellular phones and communications systems with
bit rates of 40 Gbps and higher, such as the OC768 communications protocol.
Whereas InP devices are already widely used in photonic applications as fiber
optic communications components, such as lasers and detectors with wavelengths
of 1,000 nm and longer, the move to 6 inch high quality wafers equates to more
opportunities on the electronics side. AXT points out that a particularly attractive
characteristic of InP relative to other semiconductor materials that is yet
to be fully exploited is its capacity for large-scale integration of electronic
and opto-electronic functions. Press
release
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Tokyo Denpa Teams with MItsubishi Chem to Develop Single Crystal GaNApril 25, 2002...We look forward to hearing details, but all we know via the Japanese press
is that Tokyo Denpa Company, which specializes in crystal-growing and substrate
processor Mitsubishi Chemical Corporation are said to be collaborating to develop
wafers of single-crystal GaN for use in the fabrication of blue spectrum laser
diodes and HB-LEDs. As reported in the Nihon Keizai Shimbun, the two companies
have set a two year goal to optimize their growing conditions and within three
years, mass produce their GaN wafers in diameters of two inches. Sandia Steps Into the HB-LED SpotlightApril 25, 2002...Making a colorful new splash on the compound semi HB-LED scene is the U.S.
Energy Department's Sandia National Laboratories' new solid state LED website.
The site was officially launched this week along with Sandia's internal LED
research and commercialization initiative. The site, which is working closely
in conjunction with our CompoundSemi Online industry portal, covers everything
from up-to-date science and technology and business news to a calendar of industry
events. Also provided are background articles and updates on a proposed national
initiative to accelerate progress in solid-state lighting. Another feature of
the website will be a searchable database of relevant patents - a bonus for
those interested in tracking the intellectual property in this field. The site
is sponsored and maintained by an internal Sandia research and development team
that is working on solid-state lighting. The goal of the project is to help
establish the fundamental science and technology base to replace the country's
primary lighting source, incandescent bulbs and fluorescent tubes, with semiconductor-based
solid-state lighting. Pushing hard to make the site strong is Sandia's Jeff
Tsao who can reached by tel at: 505-844-7092. Press
release. The same day as announcing the site, Sandia also revealed that
they now have 25 researchers working on a project that will help establish a
fundamental science and technology base for solid state LEDs. Sandia Senior
Scientist James Gee, together with department managers Jerry Simmons and Bob
Biefeld, head up the project. Included in the press
release on their work to date and goals is an excellent history of HB-LED
development. April 25, 2002...In March of 2001, we wrote about "The
Camera That Sees Through Things." It was an amazing application
of leading edge compound semi focal plane array (FPA) technology. Well, Sensors-Demeter
Components Group (Sensors Unlimited Inc.) of Princeton, New Jersey USA, a division
of Finisar Corp, has gone one better with their new high end camera, the SU640-1.7RT,
which is a high resolution InGaAs camera. This newest Sensors Unlimited camera
is 2x the resolution of their standard 320x240 camera and has the same spectral
sensitivity 0.9mm to 1.7mm. Compared to other near infrared (NIR) cameras that
are out there this appears to be the highest resolution room temperature InGaAs
imager currently available. Higher resolution allows the user to see more detail
in an object for much the same reason one buys a visible digital camera with
3.1 Megapixels versus one with only 1.5 Megapixels. Simply put, the image looks
better. Major applications of these clever little cameras are for scientific
and industrial imaging under microscopes in the NIR, imaging spectroscopy, and
covert surveillance. For example, silicon microprocessor manufacturers use it
to see through the silicon during processing and with it, are able to detect
any errors being made in while they're being manufactured. What does InGaAs
provide? The use of InGaAs in this application area allows higher resolution
arrays with greater sensitivity and arrays with fewer defective pixels. The
technology developed for this high resolution product will begin by meeting
the demands of the military and eventually trickle down to other products thus
improving the quality and lowering the prices of these cameras. Already these
improvements have been seen in the quality of our 320x240 arrays. Press
release Our news features are reported
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