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June 4, 2012...Sharp Corporation reports that it has achieved the highest solar cell conversion efficiency of 43.5% using a concentrator triple-junction compound solar cell. These solar cells are used in a lens-based concentrator system that focuses sunlight on the cells to generate electricity. The solar cells reportedly employ photo-absorption layers made from compounds consisting of two or more elements, such as indium and gallium.
The design enables efficient conversion of sunlight collected via three photo-absorption layers into electricity. Sharp's latest triple-junction compound solar cell uses the company's proprietary technology that enables stacking of the three photo-absorption layers to increase efficiency. InGaAs (indium gallium arsenide) serves as the bottom layer. Sharp optimized the spacing between electrodes on the surface of the concentrator cell and minimized the cell’s electrical resistance.
This achievement is the product of research and development through the “R&D on Innovative Solar Cells” project promoted by Japan’s New Energy and Industrial Technology Development Organization (NEDO). Measurement of the value of 43.5%, which sets a record for the world’s highest concentrating conversion efficiency, was confirmed at the Fraunhofer Institute for Solar Energy Systems (ISE) in Germany.
Because of their high conversion efficiency, but relatively high cost of production, compound solar cells have been used primarily on space satellites. Sharp’s aim for the future is to apply this latest development success into concentrator photovoltaic power systems that can efficiently generate electricity using small-surface-area solar cells and make them practical for terrestrial use.
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Konarka Files for Chapter 7 Bankruptcy Protection
CompoundSemi News StaffJune 4, 2012...Konarka Technologies Inc., of Lowell Massachusetts USA, a company developing thin-film solar panels, said it has filed for Chapter 7 bankruptcy protection. Chapter 7 bankruptcy requires that a company's operations cease, and a trustee must liquidate the company’s assets for the benefit of creditors.
In a statement issued Friday, Konarka chairman, president, and CEO Howard Berke said, “Konarka has been unable to obtain additional financing, and given its current financial condition, it is unable to continue operations. This is a tragedy for Konarka’s shareholders and employees and for the development of alternative energy in the United States.”
Berke noted that Kanarka “had not entirely given up hope that a rescue financing or acquisition would emerge in the bankruptcy." He said that that several large international companies had expressed interest in financing or acquiring the company. The company's press released noted however that under Chapter 7 proceedings any such transactions are evaluated by a trustee and not by the company itself. Cree Releases X-Band GaN HEMTs for Radar and Satellite Applications
CompoundSemi News StaffJune 4, 2012...Cree, Inc. of Durham, North Carolina USA, has released its X-Band, fully matched GaN HEMT transistors for commercial radar and satellite communications applications. The new GaN high electron mobility transistors (HEMTs) are rated at 50W and 100W. Cree claims that the GaN devices provide “game- changing” efficiency and performance improvements when compared to existing GaAs MESFET transistors or traveling wave tube (TWT) based amplifiers. Cree asserts that the efficiency advantages in using these new GaN devices can be up to three times greater when compared to available GaAs MESFET transistors. Further, the wide video bandwidth of GaN HEMT transistors allows for their use in multi-carrier applications with two-tone spacing up to 70MHz.
Jim Milligan, director, RF and microwave commented, “We believe this new product family will deliver comprehensive system benefits, including superior thermal management and significantly-reduced power supply loads. The new product family also offers a lower cost alternative to TWT amplifiers and associated high-voltage power supplies and linearization systems while improving overall system reliability.”
The X-Band product family consists of four new GaN HEMT transistors; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a small footprint (0.9 x 0.7”) package. The fully matched GaN HEMT transistors complement two previously released packaged MMICs, designated the CMPA5585025F and CMPA801B025F, which can also be used as drivers for the CGHV96050 or CGHV96100. NREL Confirms MiaSolé CIGS Aperture Area Efficiency Record of 15.5 Percent
CompoundSemi News StaffMay 28, 2012...MiaSolé, a maker of copper indium gallium selenide (CIGS) thin-film photovoltaic solar panels, has achieved 15.5 percent aperture area efficiency on commercial size flexible PV module (total area 1.68m2). The company says that the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) confirmed the efficiency measurement, which is over 2 points of improvement compared to the previous world record for flexible PV of 13.4 percent set earlier this year.
MiaSolé claims that its proprietary cell technology is creating new and compelling opportunities for their customers in the building, vehicle and fabric integrated PV markets. The cells for the record device were reportedly fabricated using MiaSolé’s existing production lines in Santa Clara, California. MiaSolé’s large area flexible PV module was submitted for evaluation by NREL as part of the company’s ongoing third party verification process.
“Achieving 15.5 percent efficiency is a clear validation of MiaSolé’s unique and innovative approach to delivering high efficiency CIGS flexible cell technology,” said John Carrington, CEO of MiaSolé.
“Along with our current capacity to deliver 14.5 percent glass modules, the NREL verification of our flexible modules highlights the progress we are continuously making against our efficiency roadmap and goal of delivering the lowest levelized cost of electricity to our customers,” added Carrington. NXP and A*Star Institute of Microelectronics to Develop 8" GaN-on-Si Power Devices
CompoundSemi News StaffMay 28, 2012...A*Star Institute of Microelectronics (IME) and NXP Semiconductors have entered into research collaboration to develop a 200mm gallium nitride-on-silicon (GaN-on-Si) process and technology for high voltage power devices. The goal of the R&D collaboration is to develop process technologies for the manufacturing of GaN devices on 200mm wafers. This development is expected to reduce manufacturing cost compared to using smaller size wafers. The work will be carried out in IME‘s 200mm engineering fab with GaN metal organic chemical vapor deposition (MOCVD) capabilities for GaN wafer production.
IME notes that GaN-on-Si offers the key advantages of combining high operation voltage, high switching speed, low loss, and high integration level, on large diameter Si wafers. The CMOS-compatible device process that leverages the economics of scale and compatibility with high throughput and high capacity 200mm Si based wafer process technology offers significant opportunity for cost-efficient volume production.
“This collaboration is a win-win partnership between IME and NXP to innovate a new generation of power devices,” commented Professor Dim-Lee Kwong. “IME’s GaN-on- Si research programme can play a vital role in helping our partners achieve commercial success in GaN power electronics.”
Avago and TriQuint Settle After Four Years of Litigation
CompoundSemi News StaffMay 21, 2012...Avago Technologies Limited and TriQuint Semiconductor, Inc. announced that they have agreed to settle all claims between the companies. The two parties have reportedly entered into patent cross licenses and have agreed to dismiss all related litigation. The specific terms of the settlement and the resulting licensing agreement are confidential. The costly litigation between the two companies dates back to 2009 when TriQuint filed a lawsuit against Avago, alleging that Avago infringed on four of its patents related to bulk acoustic wave (BAW) filters.
“We are pleased to have reached an amicable resolution with TriQuint,” said Hock Tan, President and CEO of Avago Technologies Limited.
“We are happy to have successfully put this litigation behind us,” added Ralph Quinsey, CEO of TriQuint Semiconductor, Inc. Nanosolar Completes 1MW CIGS Solar Panel Installation at Camp Roberts
CompoundSemi News StaffMay 21, 2012...Nanosolar Inc. of San Jose, California USA, announced that it has completed a 1 MW ground-mounted solar installation at Camp Roberts in San Miguel, California. Camp Roberts is the largest of California's National Guard training facilities. The installation is part of the U.S. Department of Defense's (DoD) Energy Security Technology Certification Program (ESTCP), which tests green technologies to address rising energy costs and minimize the reliance on fossil fuels. Nanosolar notes that the DoD spends over $4 billion annually on electricity use, accounting for more than 90 percent of the federal government's energy use.
Nanosolar is providing its copper indium gallium diselenide (CIGS) utility panels to the the ESTCP program with its solar demonstration project at Camp Roberts. The installation, which is comprised of 4,992 of Nanosolar's thin-film panels, will test the capabilities of the solution in areas where solar irradiance is above average. At Camp Roberts, strong annual insolation of 1892 kWh/m2 is typical. The project was installed in an area of flat, unused land.
"Our project at Camp Roberts shows how our technology can be used for both military and non-military applications, on a path to greater energy independence," said Eugenia Corrales, CEO of Nanosolar. "Nanosolar is on track to deliver the most cost-efficient solar electricity, with the expectation that we can achieve grid parity with non-renewable energy resources by 2015." Osram Introduces Highest Power Industrial Lasers
CompoundSemi News StaffMay 21, 2012...Osram Opto Semiconductors has introduced a new series of diode lasers. The new laser bars have an optical output of 200 Watts and a very high efficiency of 65 percent. The company says that Laserline, a manufacturers of diode lasers for industrial material processing, now uses these laser bars. Laser bars from Osram Opto Semiconductors are the core of Laserline's latest and most powerful fiber-coupled diode laser series. The complete system is water-cooled and supplies between 2 and 15 kilowatt (kW) power via a fiber with a core diameter of 1 to 2 mm. Its overall efficiency reaches maximum levels of more than 40 percent.
This laser was developed on the basis of results, which of Osram Opto Semiconductors generated in the project HEMILAS. The HEMILAS project was supported by the German Federal Ministry of Education and Research. The company says that main results from the HEMILAS project are the efficiency-optimized structure of epitaxy layers and improved mirror technologies with a high damage threshold.
The laser bar series SPL BKxx- 40WFT produces infrared radiation in various wavelengths, ranging from 915 to 1020 nanometers (nm). The bars achieve a long operating lifetime, thus meeting the requirements for industrial laser systems. The bars can be used for the optical pumping of fiber lasers. Additionally they are ideal for direct material processing, such as welding and cutting of metals in the automotive industry. This is one of the main applications of infrared lasers with more than 1 kW power.
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