Solyndra, Inc. Signs Distribution Agreement with Advanced Green Technologies
CompoundSemi News StaffFebruary 18, 2010...Solyndra, Inc. of Fremont, California USA , a manufacturer of CIGs-based cylindrical photovoltaic (PV) systems for commercial rooftops, has signed a distribution agreement with Advanced Green Technologies (AGT). AGT, headquartered in Fort Lauderdale, Florida, is a provider of building-integrated solar energy products.
"Advanced Green Technologies has built our reputation by providing building-integrated renewable energy products and working through the value chain to create efficiency that offers our customers the highest returns from renewable sources,” said Michael Kornahrens, President of Advanced Green Technologies. “Solyndra’s rooftop solar energy systems are a great solution that offers our customers the benefits of low levelized costs of electricity, especially when coupled with energy saving cool roofs.” Solyndra News Release Lattice Power Places Large Order with Aixtron
CompoundSemi News StaffFebruary 18, 2010...Lattice Power, a Chinese company based in Nanchang, Jiangxi Province, China placed an order for Aixtron MOCVD reactors in Q4 2009. Aixtron says that the order is one of the largest single orders that it has received from China.
Lattice Power reportedly plans to use the systems to produce power InGaN on silicon LEDs. The local Aixtron support team will commission the new reactors at the company’s purpose-built facility in Nanchang between the first and the fourth quarter of 2010.
The order was received during an official Chinese ceremony at the Hotel Adlon, Berlin, Germany on October 12, 2009, in which various import / export contracts between the Chinese government and the Federal Republic of Germany were signed in the presence of the Chinese Vice President, Xi Jinping and the former German Federal Minister of Economics, Karl-Theodor zu Guttenberg.
Mr. Sonny Wu, Chairman and CEO, Lattice Power, said, “During discussions it quickly became clear that Aixtron was the company that could deliver this large quantity of high performance production tools to our tight schedule."
“Aixtron’s delivery and support commitment secured our fast expansion plan for LCD backlighting and general lighting business," added Dr. Bo Lu, Executive Vice President of Lattice Power.
Aixtron Chief Operating Officer, Dr. Bernd Schulte, commented, “We believe they’re one of the best LED contenders with strong and outstanding technology on GaN-on-Silicon." Aixtron News Release
February 18, 2010...RF Micro Devices Inc. announced that it has expanded its 3G front end product portfolio with its second-generation TD-SCDMA power amplifier (PA), the RF7234 . The dual-mode RF7234 (TD-SCDMA and WCDMA band 1) follows RFMD's first-generation TD-SCDMA PA, the RF3266, which has secured multiple design wins across leading TD-SCDMA reference designs. RFMD predicts that its RF3266 will support multiple top-tier handset manufacturers headquartered in Asia and Europe.
RFMD points out that it is supporting multiple TD-SCDMA reference designs, including MediaTek and T3G. The company robust growth in TD-SCDMA handsets in calendar 2010, driven by Samsung, ZTE, BYD, LG and other leading handset manufacturers.
Eric Creviston, president of RFMD's Cellular Products Group (CPG), said, "RFMD is introducing a record number of new cellular components this year in support of our customers' new handset builds. We are particularly focused on expanding our leadership in 3G with a broad product family that is cost- and feature set-optimized for this rapidly emerging, high-growth category. In TD-SCDMA, we are forecasting strong customer adoption of our RF3266 and RF7234, and we expect robust growth in TD-SCDMA devices in calendar 2010." Company News Release
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European Project Demonstrates Long-Wavelength VCSELs for Telecommunication Networks
CompoundSemi News StaffFebruary 15, 2010...The European project MOSEL,a three-year joint research program lead by CEA-Leti, developed efficient and reliable long-wavelength VCSELs (Vertical-Cavity Surface-Emitting Lasers). The project is to address the ever-growing demands for bandwidth in telecommunication networks. The researchers point out that, VCSEL technology offers low power consumption (from five to 10 times less than the conventional edge-emitting lasers) and can be manufactured in volume at low cost.
Six partners worked together on the three-year project to help commercialize long-wavelength vcsel technology. the project was lead by cea-leti (france) and included three academic partners: dtu fotonik (denmark), epfl (switzerland), and kth (sweden), and two industrial partners: alight technologies (denmark) and beamexpress (switzerland).
The project demonstrated error-free 10gbase-lr operation up to 100 °c, concurrently with record performance: single-mode (>30dB SMSR) power of >1mW up to 100°C (>2mW at room temperature) and 10Gbps modulation and transmission over 10-km single mode fiber with BER <10–11 up to 100°C with <1-dB power penalty.
The researchers contend that these performances allow industrial partners to address previously established standards and pursue commercialization. The researchers also note that the development puts the emphasis on low-cost, intelligent and scalable networks ranging from metropolitan and local area networks (LANs) to access networks such as fiber-to-the-home (FTTH) and passive optical networks (PONs). CEA-Leti News Release Skyworks Unveils Family Multimode Power Amplifier Modules for Mobile Data Market
CompoundSemi News StaffFebruary 15, 2010...Skyworks Solutions, Inc. has introduced several integrated multimode power amplifier modules (PAMs) for next-generation smart phones and data cards requiring multiple wideband code division multiple access (WCDMA) bands. The products are first in a family to be released throughout 2010. According to Skyworks the new PAMs support up to five WCDMA bands, and they are optimized for specific mobile data requirements such as fixed supply voltage, reduced output power, and improved heat dissipation.
The SKY77601, SKY77604, SKY77605 and SKY77607 are multimode and multiband (MMMB) PAMs for next-generation high speed packet access (HSPA) 3G phones and data modules. The devices reportedly operate efficiently in quad band general packet radio service (GPRS) and enhanced data for GSM evolution (EDGE), and support bands 1, 2, 5 and 8 for WCDMA and high speed uplink packet access (HSUPA) modulation. Skyworks says that the SKY77601 and SKY77604 have improved performance under mismatch conditions, and they have reduced current consumption over power range to maximize talk and stand-by times. Additionally the company notes that the SKY77601 and SKY77604 utilize a serial peripheral interface (SPI) to communicate with the radio frequency transceiver and the antenna switch module (ASM), which simplifys their phone board integration. The SKY77602 PAM is for integrated data modules that support up to five WCDMA bands – 1, 2, 4, 5 and 8. Skyworks points out that its new PAM integrates the functionality of five discrete PAs into a single package, thereby reducing bill-of-material (BOM) and phone board size. Company News Release IBM Scientists Demonstrate Fastest Graphene Transistor
CompoundSemi News StaffFebruary 10, 2010...IBM researchers have demonstrated a 100GigaHertz graphene transistor. This accomplishment is a key milestone for the Carbon Electronics for RF Applications (CERA) program funded by DARPA to develop next-generation communication devices.
Graphene is a single atom-thick layer of carbon atoms bonded in a hexagonal honeycomb-like arrangement. It has unique electrical, optical, mechanical and thermal properties and its technological applications are being explored intensely.
The record was achieved with wafer-scale, epitaxially grown graphene using processing technology that is compatible to silicon device fabrication.
The researchers used thermal decomposition of silicon carbide (SiC) substrate to synthesize the uniform, high-quality graphene wafers. The graphene transistor had a metal top-gate architecture and a novel gate insulator stack involving a polymer and a high dielectric constant oxide. The gate length was merely 240 nanometers, leaving plenty of space for further optimization through scaling down the gate length. As a comparison, the maximum frequency of silicon transistors with the same gate length is about 40Ghz.
"A key advantage of graphene lies in the very high speeds in which electrons propagate, which is essential for achieving high-speed, high-performance next generation transistors," said Dr. T.C. Chen, vice president, Science and Technology, IBM Research. "The breakthrough we are announcing demonstrates clearly that graphene can be utilized to produce high performance devices and integrated circuits."
IBM News Release TriQuint Unveils New WEDGE Product Portfolio for Qualcomm's 3G Chipset Solutions
CompoundSemi News StaffFebruary 10, 2010...TriQuint Semiconductor of Hillsboro, Oregon USA, has released a new RF front-end solution to support 3G chipset solutions from Qualcomm.
The new solution includes the Triton PA Module family for WCDMA and the TQM7M5013, a Hadron II PA Module for GSM/EDGE. The company contends that the solution comes in a very small footprint, is efficient, and is optimized for superior current consumption. Triquint says that the solution is ideal for mobile devices including data cards, netbooks, e-readers and next generation smartphones.
The new Triton PA Module family of 3x3mm discrete Power Amplifier Modules covers all major 3GPP WCDMA bands and is capable of multi-mode operation. According to TriQuint, the Triton family leverages a combination of it CuFlip and TQBiHEMT technologies to provide superior current consumption and thermal performance. CuFlip reportedly enables superior RF performance while allowing flexible design. TQBiHEMT can integrate two gallium arsenide (GaAs) processes onto a single die. Together, these processes allow TriQuint to provide an integrated feature set using a single die inside the module.
The TQM7M5013, a 5x5mm quad-band, Hadron II PA Module provides the GSM/EDGE portion of the WEDGE solution when paired with the Triton modules. The TQM7M5013's architecture reportedly improves efficiency and results in longer talk time for consumers. The company notes that TQM7M5013 is aligned with a recently released 3G Qualcomm chipset and is designed into more than a dozen platforms that are expected to launch in 2010.
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