RFMD Ships Pre-Production GaN-Based CATV Hybrid Amplifiers to U.S.-Based CATV Equipment Provider
CompoundSemi News StaffDecember 14, 2009...RF Micro Devices of Greensboro, North Carolina USA, has begun pre-production shipments of gallium nitride (GaN)-based CATV (cable TV) amplifiers to major U.S.-based CATV equipment provider.
RFMD points out that operators of hybrid fiber coax (HFC) networks are installing fiber capacity deeper into their networks ("fiber deep" networks) to address the increasing demand for higher throughput video and broadband services. Accordingly, CATV equipment providers hope to reduce the cost of fiber deep networks through the use of semiconductor devices capable of higher RF output levels than those of state-of-the-art GaAs-based devices.
RFMD contends that its GaN-based devices can reduce the number of amplifiers required in emerging architectures, also known as N+1 architectures, and achieve up to 20-percent cost savings in fiber deep networks. RFMD says its initial GaN shipments to this CATV customer are for optical nodes, and subsequent shipments are also expected to be used in line extender amplifier applications. The company expects to begin volume production in the first half of calendar 2010.
"We are excited to announce pre-production shipments of our GaN-based CATV hybrid amplifiers to this major CATV customer," said Alastair Upton, general manager of RFMD's Broadband Components business unit. "With our GaN semiconductor expertise and our world-class CATV manufacturing capability, RFMD is uniquely positioned to bring the next generation of high-performance CATV amplifiers to the CATV equipment market."
Company News Release
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December 14, 2009...VT Silicon, a fabless semiconductor company has reportedly selected TowerJazz
to be its manufacturing partner for what the company says is the first silicon 4G RF Front End IC to meet the operating requirements of 4G mobile devices. VT Silicon reportedly chose TowerJazz’s SiGe process instead of a more expensive GaAs to enable higher integration at a significantly lower cost. VT Silicon's 4G RF front end IC offers the company’s patented Linearity Enhancement Technology (LET™) and a novel RF Front End topology to achieve the power, efficiency, and linearity required by today’s battery-powered 4G broadband mobile devices.
TowerJazz's Silicon Radio Platform includes a SiGe transistor that can operate at up to 200GHz, which it says is competitive with GaAs, and offers as much as 40% lower die cost. The SiGe BiCMOS technology allows the RF Front End to be integrated in a wireless device on a single piece of silicon. Furthermore, the CMOS technology allows mixed-signal and digital functions on the same chip for programmable control of RF functions, advanced sensors, and serial digital communication. VT Silicon says that the inegration eliminates the need for a number of expensive discrete GaAs devices ultimately results in a reduced bill of materials.
Vikram Krishnamurthy, CTO, VT Silicon commented, “Our design, an industry first, takes full advantage of this silicon process to provide highly intelligent digital communications, programmability, and control of all RF functions.” VT Silicon News Release Enbridge and First Solar Agree on 60 MW Renewable Energy Expansion at Sarnia
CompoundSemi News StaffDecember 9, 2009...Enbridge Inc. of Calgary, Canada and First Solar, Inc. of Tempe, Arizona USA have entered into an agreement to expand the Sarnia Solar Project from 20 megawatts of capacity to 80 megawatts (MW). The total system cost of of the project is expected to be CDN $300 million for the expansion. When completed in the second half of 2010, it is expected to be the largest photovoltaic solar energy facility in North America. Enbridge and First Solar announced in October an agreement for Enbridge to acquire the initial 20 MW solar energy project that First Solar developed at the Sarnia, Canada site. The 20 MW project achieved full commercial operation on December 7, 2009.
Subject to the satisfaction of certain conditions, First Solar will construct the thin-film solar project for Enbridge under a fixed price engineering, procurement and construction contract. First Solar says that the 60 MW phase of the project is expected to begin construction in December and be completed by December 2010. With a 80 MW peak capacity, Enbridge expects the Sarnia Solar Project will generate enough power to meet the needs of over 12,800 homes. Under a long-term contract, First Solar will provide operations and maintenance services to Enbridge. The power output of the facility will be sold to the Ontario Power Authority pursuant to 20-year Power Purchase Agreements under the terms of the Ontario Government’s Renewable Energy Standard Offer Program. First Solar News Release
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Sanyo Ends Red And Infrared Laser Diode Production
CompoundSemi News StaffDecember 9, 2009...Photonics Products Ltd., the authorized distributor of Sanyo laser diodes, reports that due to the recent merger between Sanyo and Panasonic, Sanyo will stop producing red and infrared laser diodes after September 30th 2010. The last time buy date for all affected product lines will be March 31st 2010.
Photonic Products has negotiated an agreement with Sanyo whereby it is able to guarantee order coverage for up to two years, providing final orders are placed by March 31st 2010. Photonic Products will also source and recommend suitable alternatives from leading manufacturers which will provide equivalent performance and reliability at a comparable price. During the transition period, the Sanyo's engineers will work with customers to evaluate and approve alternative laser diodes to prevent disruption to production schedules and minimize any inconvenience.
Sanyo will reportedly continue manufacturing 405nm blue-violet laser diodes, which are available in with up to 85mW optical output power and with the stability required for critically demanding industrial and medical applications. Photonic Products will continue to distribute Sanyo blue-violet laser diodes. Photonic Products Inc. News Release
Huga Increases Blue LED Capacity With Six More Aixtron MOCVD Tools
CompoundSemi News StaffDecember 8, 2009...Huga Co Ltd. of Taiwan has reportedly purchased six Aixtron MOCVD tools to boost its capacity of blue LEDs. Aixtron revealed that in the second quarter 2009 Huga Co., Ltd placed an order for six AIX 2800G4 HT MOCVD reactors in the 42x2 inch configuration. Aixtron will deliver the systems in the fourth quarter 2009, and they will be installed at Huga's production facility in the Taichung Science Park, Taiwan.
Sybil Yang, CEO, commented, "We already have thirteen Aixtron AIX 2800G4 HT mass production MOCVD systems in operation for the high volume manufacture of LED epiwafers. The No. 2 LED chip maker in Taiwan, Huga will place more orders for MOCVD systems in 2010 to increase the capacity to surpass competitors. "
Aixtron News Release Semiconductor Research Corporation and Stanford University Demonstrate Top-Gated FETs and CMOS Inverters
CompoundSemi News StaffDecember 7, 2009...Stanford University, Semiconductor Research Corporation (SRC), and Taiwan Semiconductor Manufacturing Company have developed what they claim is the first top-gated field effect transistor (FETs) and CMOS inverters. The FETs and CMOS inverters feature 20 nanometer (nm) contact holes using diblock copolymer lithography. The researchers assert that this advance could eventually enable production of smaller, faster, and cheaper devices.
Thus far, feature sizes beyond the 22nm node have not been achieved.
In recent years, researchers have begun to look at block copolymers because a thin film of it, under the right conditions, can self-assemble into regular arrays of holes on the order of 20nm or smaller in diameter. This tiny, self-assembled swiss cheese of block copolymer can act as a stencil for creating electrical contacts to very small semiconductor devices. Previous attempts at using self assembling block polymers have failed because the self-assembled holes were not aligned to existing features. However the SRC-sponsored work has produced functional devices and circuits employing diblock copolymer patterning for sub-22nm CMOS technologies on a full wafer scale.
“We believe this development will help to bring self-assembly closer to broad application in the semiconductor industry," commented H.-S. Philip Wong, a professor of Electrical Engineering at Stanford University.
The researchers hope to integrate the innovations into manufacturing processes in the next seven to ten years. The findings will be presented at IEEE’s 2009 International Electron Devices Meeting in Baltimore, Md., on December 9. Semiconductor Research Corporation News Release Our news features are reported
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