Intersil and the Georgia Institute of Technology Announce Joint Alliance for Development of Power Management Technologies
CompoundSemi News StaffNovember 2, 2009...Intersil Corporation,announced an alliance with the Georgia Institute of Technology. The alliance includes the opening of a major new development facility and the kickoff of several new research and development of programs for power management semiconductor technologies.
This alliance involves opening a 4,300 square-foot on-campus Analog Processing Center of Excellence (ACE) and world-class research efforts across multiple Georgia Tech facilities. At the Georgia Electronic Design Center (GEDC), Intersil engineers, along with Georgia Tech students and faculty, will focus on developing and creating advanced power management circuit designs. Intersil and the Institute will also jointly develop advanced process technology for semiconductors used in high-voltage power management and distribution.
Intersil says that the new center will also utilize a technique developed at a Georgia Tech-founded company known as collaborative signal processing that removes performance-limiting impairments such as signal loss, dispersion, skew and noise. Intersil and Georgia Tech expect that the developments from the joint alliance will spawn significant power savings in the electrical grid and tomorrow's data centers. Intersil points out that the partnership is built on its longstanding leadership as an expert in the development of power management technologies and recent research advances in semiconductor fabrication processes.
"The clean and efficient generation, transmission and storage of power are key challenges of the twenty-first century," said Dave Bell, CEO, Intersil Corporation. "Intersil is delighted to be working closely with one of the world's finest educational institutions to develop innovative technologies that will meet our needs for smarter, greener and more efficient power solutions." Intersil News Release AT&M Co., Ltd. and Odersun AG to Form Solar Thin-Film Joint Venture in Beijing, China
CompoundSemi News StaffNovember 2, 2009...Advanced Technology & Materials Co., Ltd. (AT&M), a supplier of advanced materials based in China, and Ordersun AG, a German manufacturer of thin-film solar cells and modules announced plans to form a joint venture in Beijing. Ordersun produces copper indium disulfide thin-film on copper tape.
The joint venture will produce and sell solar cells and modules based on Odersun proprietary thin-film technology.
Odersun and AT&M established their relationship in 2004, when AT&M became an early investor in Odersun and a strategic partner in a number of joint research projects. The companies now are joining forces to address the fast-growing market by forming this joint venture.
"Here we have the unique opportunity to address the Chinese market and at the same time to further accelerate innovation at Odersun in cooperation with a highly competent partner," stated Dr. Hein van der Zeeuw, Chief Executive Officer of Odersun AG. "While we continue with our current expansion plans in Germany, our future technology development will benefit from AT&M`s expertise and longtime experience in material technology and manufacturing."
The construction of the joint venture`s manufacturing facilities in China is expected to start during 2010. Ordersun News Release
October 29, 2009...The U.S. Department of Energy announced 37 ambitious research projects that will receive some $151 million in funding. The DOE says that the projects could fundamentally change the way we use and produce energy. One of the selected projects includes the development of low cost crystals for LED lighting. This project to develop novel crystal growth technology will be by Momentive Performance Materials. The company says the development could dramatically lower the cost of producing light emitting diodes (LEDs). According to Momentive Performance Materials, this higher quality, low-cost material would offer significant breakthroughs in lowering costs of finished LED lighting. DOE News Release Content continues for LIGHTimes SecondPage members... Ascent Solar to Supply CIGS Solar Modules to FTL Solar for NYSERDA Project
CompoundSemi News StaffOctober 28, 2009...Ascent Solar Technologies, Inc., a developer of flexible thin-film copper indium gallium diselenide (CIGS) photovoltaic modules,will be providing modules to FTL Solar for their research and development contract with the New York State Energy Research and Development Authority (NYSERDA). According to Ascent Solar, the parties will work on the development of light weight flexible structures that include energy production from Ascent Solar's modules.
Some of the development work will be carried out under a $22,500 collaborative agreement between FTL Solar and the Center for Advanced Microelectronic Manufacturing in Endicott, and the Center for Autonomous Solar at Binghamton University.
Robert Lerner, Chief Technology Officer for FTL Solar stated, “We are pleased to announce our relationship with Ascent Solar. We are confident their light weight flexible high power modules will work well with our existing products as well as future products currently in our product development pipeline.”
NYSERDA President and CEO Francis J. Murray, Jr. said, “NYSERDA is enthused about this company’s potential and is pleased to invest $250,000 toward this $500,000 FTL project that is developing a unique product with so many real-world, right-now applications. Because of its physical attributes and application flexibility, shade and electricity can be realized just about anywhere. From a New York perspective, the potential for this firm to bring product development and manufacturing to the Empire State is very encouraging and supports Governor Paterson’s goal to attract clean energy efficiency manufacturing jobs to our state.”
Ascent Solar News Release SINANO Installs Aixtron System For Rapid Growth of Cabon Nanotube Arrays
CompoundSemi News StaffOctober 28, 2009...Aixtron reports that SINANO, the Suzhou Institute of Nanotech and Nano-bionics of Chinese Academy of Science, recently received its new Aixtron Black Magic carbon nano tube growth tool. During the second quarter of 2009, the Black Magic tool was delivered in a 2 inch wafer configuration. The tool will be used in research and development of carbon nanotube arrays.
Prof. Qingwen Li, from SINANO commented, “Installation and commissioning of the AIXTRON Black Magic system went smoothly and already we have carried out some experiments in both LPCVD and PECVD modes. We used our own catalysts and achieved vertically aligned carbon nanotube arrays with typical growth rates of 60 microns per minute. Using PECVD, a perfectly straight CNT array film could be obtained. SEM images of the two samples synthesized by the two modes showed highly acceptable and reproducible results."
"We now aim to prepare ultralong CNT arrays with controllable structures for nanocomposites and patterned CNT arrays for device fabrication,” said Prof. Qingwen Li added. “The vertical showerhead-based growth reactor, fast heating stage and rapid sample turnaround features have been the crucial factors for our purchasing decision. As to our initial conclusions on the new system, everything has performed as expected. It is very easy to use with a user-friendly interface. In addition, the in-situ monitoring of the growth process is a significant advantage."
Aixtron News Release BluGlass Awarded $4.96 million Government Funding for Solar Cell Project
CompoundSemi News StaffOctober 26, 2009...Australian semiconductor company, BluGlass Limited, has been awarded $4.96 million of Commonwealth Government funding to assist with the development and commercialization of its high efficiency thin-film solar cell technology. BluGlass has secured the funding under Climate Ready Program which is one of the three elements of the $240 million Clean Business Australia initiative.
The 'High-Efficiency Thin-Film Solar Cell' project aims to develop a third generation photovoltaic technology for manufacturing high efficiency solar cells based on the compound semiconductor material, indium-gallium nitride (InGaN).
AusIndustry, the Australian federal government's program to provide assistance to industry, will provide the cash to BluGlass over 33 months. As part of the funding agreement BluGlass will match the AusIndustry funding with its own expenditure.
"The Government backing is a major vote of confidence in BluGlass's technology. This will see Australian technology return to the forefront of solar innovation and adoption as Australia leads the way on climate change mitigation," said BluGlass CEO Giles Bourne today.
The Climate Ready program is reportedly a competitive grants program which offers match funding grants from $50,000 up to $5m on projects which help overcome climate change challenges. BluGlass News Release Motorola Claims its GaN Technology Saves Cable Operators Money
CompoundSemi News StaffOctober 26, 2009...Motorola of Horsham, Pennsylvania USA, reportedly implemented its gallium nitride technology that it says extends the reach of its fiber deep portfolio of optical nodes and RF amplifiers.
At the same time, the company says its extended reach RF amplification technology delivers up to 20-percent savings to Cable operators.
Motorola boasts that its technology, which it contends offers the highest-available RF output levels for cable operators, results in up to a 20-percent reduction of active components in N+1 architectures. Additionally the company says that reducing the actives in the network allows the operator to lower capital and operational expenses. The company says it also reduces system powering requirements while improving network reliability.
Motorola points out that cable providers continue to successfully leverage cost-effective fiber deep technologies as they drive fiber deeper into hybrid fiber coax (HFC) networks to deliver higher throughput video and broadband services to their subscribers. The company says that its extended reach RF amplification reduces the number of active components and their associated installation and operational costs. Motorola indicated that the new technology minimizes the need for re-spacing amplifiers as operators upgrade to 1 GHz and higher technologies. Motorola new Gallium Nitride technology is incorporated into its SG4000, BTN100, MBN100 and BLN100 optical nodes and BT, MiniBridger and BLE RF amplifiers.
"No other vendor can drive an RF signal as far as Motorola," said Joe Cozzolino senior vice president and general manager, Access Networks Solutions, Motorola Home and Networks Mobility. Company News Release Xiamen Sanan OptoElectronics in China Selects Veeco MOCVD Systems for Capacity Expansion
CompoundSemi News StaffOctober 26, 2009...Veeco reports that Xiamen Sanan OptoElectronics, a maker of LEDs based in China, ordered
Veeco’s TurboDisc® Metal Organic Chemical Vapor Deposition (MOCVD) Systems to expand their manufacturing capacity of high brightness light emitting diodes (HB-LEDs). Specifically Sanan Optoelectronics ordered the TurboDisc K465 GaN MOCVD System features Veeco's most advanced reactor technology and delivers high throughput for high volume production of GaN-based blue and green HB-LEDs. The TurboDisc E475 As/P MOCVD System is reportedly engineered for high-volume production of red, orange and yellow HB-LEDs. Veeco boasts that it offers a level of process control and reliability unmatched by competing MOCVD technologies.
Mr. Simon Lin, CEO of Sanan, commented, "The addition of Veeco's high productivity MOCVD systems to our manufacturing facilities in Xiamen and Tianjin, China ensures that we can continue to increase output of our market-leading HB-LEDs. We are seeing increased demand for LEDs in such applications as general illumination, TV backlight and outdoor display.”
Bill Miller, Ph.D., Senior Vice President, General Manager of Veeco's MOCVD Operations commented, "We are pleased that Sanan, a key technology leader and the largest manufacturer of HB-LEDs in China, has chosen Veeco’s TurboDisc MOCVD Systems for its capacity expansion. We are looking forward to partnering with Sanan as they increase their high volume production of HB-LED devices."
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