Northrop Grumman Wins Terahertz Contract
CompoundSemi News StaffMay 20, 2009...The Defense Advanced Research Projects Agency (DARPA) has awarded Northrop Grumman Corporation Phase I of a $37-million Terahertz (THz) Electronics contract, company officials announced. Work on the contract will support military and space satellites with the development of active receivers and transmitters operating at 670 gigahertz that ensure reliable, high-resolution images, and other applications.
The THz Electronics program is an extension of Northrop Grumman Aerospace Systems' successful $7.7-million Phase I of development on the Sub-millimeter Wave Imaging Focal Plane Technology (SWIFT) program for DARPA that demonstrated components such as oscillators and amplifiers (low-noise and power) operating at 340 GHz for high-resolution imaging at sub-millimeter frequencies in all types of weather environments encountered by space and defense satellites. The THz Electronics program, which will continue to be supported by the U.S. Army Research Laboratory, will start at 650 GHz this year. It is not coincidental that DARPA picked Northrop Grumman. Northrop Grumman Aerospace Systems recently captured a Guinness World Record for the fastest transistor which oscillates at well over 1000 GHz (1 THz).
Dr. Mark Rosker, program manager of DARPA's Microsystems Technology Office noted that the higher frequency components will enable emerging applications like terahertz communications and radars. He added, "But of potentially even greater consequence, this program will drive the state of the art in high performance III-V electronics, with vast implication to RF circuits and systems operating at more conventional (microwave and millimeter-wave) frequencies."
Company News Release
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May 20, 2009...IQE of Cardiff, UK, reports that it has won funding from the UK's Technology Strategy Board (TSB) for research into compound semiconductor laser products for the next generation of high speed broadband access devices.
The TSB is investing £1 million to help companies carry out initial research that to eventually develop and introduce internet access technology with speeds up to 10Gb/s, which is 1,000 times faster than current broadband speeds.
IQE and chip foundry partner CST Global have been collaborating on development of high specification diode laser components for such applications. The partners have been awarded three feasibility studies running in parallel to look at low cost laser sources for uncooled, high speed, extended reach Fibre To The Home (FTTH) applications based on AlInGaAs laser products.
Project lead Dr Wyn Meredith commented,
"This phase of optical network expansion is rewriting the rulebook in terms of the cost - quality equation; we are enabling a new breed of component vendors who have been quick to adopt the foundry model, and are proving far more agile and resilient than their vertically integrated competitors in the current market conditions. Involvement in this programme will result in rapid introduction of standardised foundry epitaxial and fabrication level laser diode solutions which will have proven performance in terms of transmission speed and optical power output, compatible with larger (4”) wafer formats." IQE News Release Advanced Photonix, Inc. to Deliver 40G Optical Receivers
CompoundSemi News StaffMay 20, 2009...Picometrix, LLC, an Advanced Photonix Company, announced that it signed an agreement with a manufacturer of optical subsystems to supply 40G balanced optical receivers. The optical receivers will go into the optical sub system manufacturer's next generation transponders for long-haul telecommunication networks. The company expects annual revenues from this agreement in excess of $1 million in the current fiscal year (FY2010). Under the agreement, Picometrix will supply its line-side DQPSK optical receivers, which utilize its patented photodiode, amplifier, and component packaging technologies. Picometrix contends that these technologies give the optical receivers the highest performance with the most compact form factors on the market today. The company's optical receivers will be incorporated into the OEM's 40G transponders. This will in turn be deployed throughout the networks of telecommunication service providers.
"Even in these challenging economic times, the demand for bandwidth is still increasing at a rapid rate driven by bandwidth intensive video applications, such as IP-HDTV," said Robin Risser, president and general manager of Picometrix. "These video applications require the next-generation of high bandwidth infrastructure to effectively deliver these services to locations across the globe...." Advanced Photonix News Release
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Tegal Establishes Subsidiary, Tegal France
CompoundSemi News StaffMay 18, 2009...Tegal Corporation of Petaluma, California USA, a developer of production solutions for power ICs and advanced MEMS, reports that it has established a wholly owned subsidiary in Annecy, France, called Tegal France. According to Tegal, the move completes its transition related to the Deep Reactive Ion Etching (DRIE) products and corresponding intellectual property for 3D packaging and MEMS devices which came from the acquisition of France-based Alcatel Micro Machining Systems (AMMS) and Alcatel Lucent. The deal was first announced in September 2008 and completed later that month. Tegal says that the AMMS acquisition provides new opportunities in the MEMS and power device markets where Tegal is well entrenched. Tegal notes that it also provides access to large and fast-growing new markets such as thru-silicon vias (TSVs) for 3D IC packaging.
Tegal says that the new entity has staff composed of skilled engineers from the former AMMS operation. Tegal France will reportedly serve as the company's European hub and the nerve center of the its advanced DRIE product development initiatives. General Manager/R&D Director, Nicolas Launay will lead the Tegal France operation. Launay previously served as R&D Director at AMMS in Annecy. He reports to Tegal’s Chief Executive Officer (CEO), Thomas Mika.
Launay commented, "With our many combined years of etch technology development and process expertise within both the Tegal and the AMMS product families, we believe we can offer powerful new solutions to leading semiconductor manufacturers, especially those working on new-generation 3D packaging applications." Tegal Corporation News Release Oxford Instruments Launches CrystalFlex HVPE Reactor
CompoundSemi News StaffMay 18, 2009...Oxford Instruments has launched CrystalFlex, its new multimulti-wafer Hydride Vapour Phase Epitaxy (HVPE) reactor. The company boasts that CrystalFlex provides superb epitaxial growth control and a cost effective method for the production of high quality, crack free epitaxial GaN, AlGaN and AlN single crystal materials. Oxford Instruments notes that the new system is designed for R&D or full scale production of Group III nitrides. According to the company, the focus of the new system is on process stability, reproducibility, and optimal source materials usage. CrystalFlex can grow a variety of Group III nitrides with various thicknesses with its flexible reactor configuration.
Bernard Scanlan, General Manager of Oxford Instruments, commented, “This product launch is a natural progression for Oxford Instruments. Our acquisition in 2008 of TDI and its highly qualified team of research scientists, together with Oxford Instruments development scientists and top level technological expertise, provide a unique platform from which to develop this reactor. Its flexibility means that it is capable of both R&D and full scale production. We are confident that CrystalFlex’s superior features are the keys for the commercialization of optoelectronic and electronic products for Solid State Lighting, RF and power electronics industries." Oxford Instruments News Release
Strategy Analytics Hosts "State of the Compound Semiconductor Industry" Webinar
CompoundSemi News StaffMay 13, 2009...Research firm, Strategy Analytics announced a free webinar to take place on May 14, 2009, entitled, "State of the Compound Semiconductor Industry." Asif Anwar, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies (GaAs) service, will reportedly be the host.
The topics covered in the online presentation include: the impact of global economics on the GaAs RF industry; the prospects for emerging GaN technologies in RF and power electronics markets; LED and laser diode market trends; and prospects for III-V (three-five) technologies from the renewable energy sector.
Stephen Entwistle, VP of the Strategic Technologies Practice at Strategy Analytics said, "Our GaAs service research explores the dynamics that will affect the compound semiconductor industries, helping our clients' businesses evaluate the market opportunity across multiple end markets including optoelectronics (LEDs, laser diodes), RF and microelectronics and the emerging terrestrial photovoltaic opportunity." He continued, "We're excited about using this additional resource for the first time to present our GaAs service analysis to a wider audience."
The webinar will take place on May 14 between 4pm - 5pm UK / 11am - 12pm EDT US. The company's analysts will reportedly also be attending CS Mantech in Tampa, Florida, from May 17th to May 21st. Company News Release Anadigics Wins Award in China for PA
CompoundSemi News StaffMay 13, 2009...Anadigics Inc., of Warren, New Jersey USA, announced that its AWT6221 HELP3 WCDMA dual-band, power amplifier (PA), has won a China Telecommunication Technology Innovation Award. The company was presented with the 'Excellent Achievement Award' in the Wireless Communication Technology & Solution class. Anidigics points out that it is the only RF provider to be recognized in this category.
Anadigics notes that the prestigious award is approved by the China Industry and Information Technology Ministry and was introduced in 2006 to encourage the development of innovative information and telecommunication products in China.
The company contends that the award-winning AWT6221 PA reduces average current consumption by 75% and delivers an increase in talk-time of up to 25%. Also, the company says that through selectable bias modes, the HELP3 PAs achieve optimal efficiency across the low-range and mid-range output power levels. At low power levels the intelligent bias circuit AWT6221 reportedly reduces the current consumption to 8mA. The company says that the integration of two independent PA chains enables the AWT6221 to deliver uncompromised performance in both frequency bands while conserving circuit board area.
"It is a tremendous honor for Anadigics' innovative power amplifier technology to be recognized by the China Industry and Information Technology Ministry, and we are very proud to be the sole RF PA supplier to receive this distinguished award," commented Ali Khatibzadeh, Senior VP and General Manager of RF Products at Anadigics. Company News Release Our news features are reported
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