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February 19, 2009...Cree Inc. has collaborated with the United States Air Force Research Laboratory (AFRL) Propulsion Directorate and high-power module pioneer Powerex, Inc., to develop a prototype dual switch 1200-volt, 100-amp power module featuring all-SiC semiconductors. According to Cree the switch is capable of operating at junction temperatures up to 200 degrees C. Cree boasts that the combination of advanced SiC devices and innovative package design allows the module to operate at temperatures beyond those achievable with a silicon IGBT-based module.
The AFRL funded development features Cree high-current SiC MOSFETs and SiC Schottky diodes, which were developed under contracts from Army Research Laboratory (ARL). The SiC metal oxide semiconductor field effect transistors (MOSFETs) are normally-off devices, and they have drive requirements equivalent to the silicon IGBT devices they replace. Cree points out that for this reason, the SiC module is a potential drop-in replacement for most applications.
According to Cree, the all-SiC power switch module can be an enabling technology for next-generation military aircraft and future Army combat systems. Cree notes that the combination of its SiC devices and Powerex packaging technology could lead to smaller, lighter-weight systems with reduced cooling requirements that simultaneously offer increased reliability and overload capacity because of its high-temperature operation capability.
Cree says that the low conduction and switching losses make the module ideal applications requiring high efficiency such as solar energy power inverters and electric drives, and power conversion for hybrid and electric vehicles. Cree News Release
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Solar Market Correction Underway
CompoundSemi News StaffFebruary 19, 2009...Oversupply in the solar market will lead to company failures, but it will set the stage for long-term growth for survivors, according to the latest report from Lux Research. The report entitled "Finding the Solar Market's Nadir," predicts that the available capacity of solar cells and modules will measure twice the demand in 2009. Despite the oversupply the world economic crisis and lower oil prices are expected to contribute a demand shrinkage in 2009 going from $36 billion over 5.5 GW to $29 billion over 5.3 GW this year.
The researchers found that as of the beginning of 2009 there were 184 polysilicon producers, 162 crystalline silicon cell and module makers, 29 high-concentrating PV (HCPV) developers, 91 thin-film silicon producers, 10 cadmium telluride (CdTe) thin-film module manufacturers, 33 copper indium (gallium) diselenide (CIGS/CIS) developers, and 12 solar thermal providers. The capacity for amorphous silicon and CdTe, and CIGS will increase overall despite expectations of widespread company failure, the report indicates.
Ted Sullivan, Senior Analyst at Lux Research, and the report's lead author said, "In order to reduce inventories, suppliers will have slashed their cell and module prices by 25% or more. While this spells a shakeout in the near term, the price reductions will push solar closer to grid parity and prime the market for recovery and growth."
Lux Research News Release RFMD Introduces Converged 3G/4G Front End Platform and Family of 2G Transmit Modules
CompoundSemi News StaffFebruary 17, 2009...RFMD has reportedly released components for the most advanced 3G and 4G technology while also introducing lower cost 2G transmit modules for emerging markets.
The company of Greensboror, North Carolina USA has introduced what it says is the first converged 3G/4G cellular front end platform that can cover nine cellular bands. The RF6460 offers multimode architecture (2G/2.5G/3G/4G) that the company says is the most efficient in its class. RFMD boasts that it also eases implementation, shrinks solution size and reduces component placements, versus mode-specific and band-specific architectures. The company says that supporting up to nine bands helps the RF6460 simplify the design, reduce the cost and accelerate the implementation of 3G and 4G multimode mobile devices. Company News Release.
RFMD also introduced a family of 2G dual-band transmit modules, the RF716x family (EGSM900/DCS1800 or GSM850/PCS1900) GSM/GPRS transmit modules. According to the company, the RF716x product family is designed to meet the front end requirements of emerging markets' handsets, including reduced solution size, improved efficiency, and robust ESD protection. At the same time, the company says the modules satisfy the need for quality, reliability and reduced handset bill-of-material (BOM) costs.
Paul Augustine, general manager of RFMD's Components Solutions Business Unit, said, "The RF716x family of high performance transmit modules helps manufacturers of emerging market handsets lower their bill of material (BOM) costs, reduce size and accelerate product time-to-market without sacrificing the quality and reliability they have come to expect from RFMD."
Company News Release
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Dilas Introduces Introduces Wavelength Stabilized Diode Lasers
CompoundSemi News StaffFebruary 17, 2009...Dilas, a maker of diode lasers based in Mainz, Germany, has reportedly
introduced wavelength stabilized technology for its high-power fiber-coupled diode lasers.
Dilas says that the new wavelength stabilized fiber-coupled diode lasers
provide superior wavelength stability despite wide variation in temperature, current and operating hours. The new wavelength stabilized fiber-coupled diode lasers range from a model with a 25W output from a 200µm up to one with 400W output from a 400µm fiber core diameter (0.22NA). According to the company, with the narrow line width of <0.5nm at full width half maximum, the typical wavelength-temperature drift is 0.01nm per Kelvin.
Dilas contends that its wavelength stabilized technology has high spectral brightness in both ideal and harsh operating environments. The company notes that improving the wavelength stability of the diode lasers leads to higher system efficiency, higher reliability, longer lifetime and overall lower operating costs.
Dilas offers wavelength stabilized technology in fiber-coupled diode lasers at stabilized wavelengths of 808nm, 940nm, 976nm or 981nm. Other wavelengths like 795nm are available on request.
Dilas says its diode lasers are an ideal solution for customers demanding high power and high brightness in their applications with a narrow absorption bandwidth such as pumping of solid-state lasers, fiber lasers and optical pumping of alkaline vapors. Company News Release Tonghui Electronics to enter LED market with Aixtron MOCVD tools
CompoundSemi News StaffFebruary 17, 2009...Tonghui Electronics Corp., a startup LED maker based in China, has reportedly ordered three Aixtron MOCVD tools. Aixtron says that the order is for its AIX 2800G4 HT IC Planetary Reactor system, Aixtron’s flagship reactor for large-scale manufacturing of LEDs and other advanced devices, and two AIX 2600G3 IC systems.
The AIX 2800G4 HT IC tool is configured for 42x2” wafer capacity, and the two G3 systems are to be shipped with the 49x2” configuration in the first quarter of 2009, their respectively third quarter of fiscal 2008. Tongui Electronics notes that all three systems will be used for the development and manufacture of Power Chip LEDs.
Prof. Liu, of Tonghui Electronics Corp. commented, "Aixtron has been a dependable provider and supporter of MOCVD equipment and process technology for over a decade. We have used their tools and based on this good experience we have decided to place with them our first major order for LED equipment. The large-scale reactors underpin our present and future production plans. We intend to become a renowned provider of new high performance optoelectronic devices starting with power LEDs and in future we might also add III-V concentrator photovoltaics to our production range." Aixtron News Release
National Inventors Hall of Fame Inducts CS Innovators
CompoundSemi News StaffFebruary 12, 2009...The National Inventors Hall of Fame has announced its 2009 class of inductees. In celebration of the 50th anniversary of the integrated circuit, this year's class represents advances related to or enabled by integrated circuit technology. The inductees include four men who have contributed greatly to the field of compound semi-based technology. Alfred Cho developed a process of molecular beam epitaxy (MBE) at Bell Labs. In the process, materials are layered precisely atop one another to form devices like transistors, light-emitting diodes, and lasers. The switches in cell phones that carry our conversations are made using MBE, as are most of the lasers used in CD/DVD players and drives.
Dawon Kahng with John Atalla invented the first practical field- effect transistor, a device that controls electronic signals by switching them on or off or amplifying them. According to the Inventors Hall of Fame, metal oxide semiconductor field effect transistors (MOSFETs) are the most widely used type of integrated circuit in the computer and electronics industries.
Frank Wanlass developed complementary metal oxide semiconductor-CMOS technology that goes into most modern microchips. Chips made with the technology have low power requirements, making them ideal for portable and battery powered devices. National Inventors Hall of Fame News Release Element Six Participates in Program to Develop Materials for Extreme Environments
CompoundSemi News StaffFebruary 12, 2009...Element Six, a supplier of diamond and diamond-like "supermaterials",
reports that it is involved with an EU-funded research program to develop new materials for electronic devices and sensors that can operate in extreme conditions and harsh environments. The program, called MORGaN - Materials for Robust Gallium Nitride - is a three year project with euros 9.2 million funding that involves 23 companies and universities in 11 countries. The primary goal of the project is to develop materials for sensors and electronic devices that can withstand high temperature and internal device high electric field that silicon-based devices cannot.
The project is funded under the EU’s Seventh Framework Program, it aims to combine synthetic diamond with gallium nitride to create what it says will be the next generation of high performance sensors and electronic devices for extreme environments. The idea is to take advantage of the excellent heat spreading properties of polycrystalline diamond and the electrical efficiency of gallium nitride (GaN) based heterostructures to make innovative composite substrates. According to Element Six, MORGaN is bringing together groups of specialists in materials, electronics and metallization for processing, through to specialists in device design, modeling, and packaging. “Diamond is potentially the ultimate substrate for many high temperature or extreme power applications,” noted Geoffrey Scarsbrook, R&D operations manager for Element Six Technologies.
“Element Six will use its expertise to further develop and optimise the synthesis and primary processing of silicon/polycrystalline diamond composite wafers,” said Steve Coe, general manager of Element Six Technologies. Element Six News Release
JDSU Partners With Sanmina-SCI to Advance its Manufacturing StrategyFebruary 9, 2009...Opto electronics company, JDSU, reports that it has signed a definitive agreement with Sanmina-SCI Corporation, a leading electronics manufacturing. Sanmina-SCI will acquire certain manufacturing assets, inventories, and employees related to JDSU’s operations in Shenzhen, China, under the terms of the agreement. Sanmina SCI agreed to offer manufacturing services for JDSU's optical products. The agreement is subject to certain customary closing conditions, including regulatory approval. JDSU and Sanmina-SCI anticipate the transaction to close before April 6, 2009.
JDSU insists that the transfer of its assets, inventories, and skilled employees related to its operation in Shenzhen, China will be seemless and that it will allow Sanmina-SCI to produce and deliver orders without any interruption to JDSU and its customers. Furthermore, JDSU says it will continue to maintain corporate functions and product development in the region.
"We are pleased to partner with JDSU, a recognized optical communications leader. This collaboration fulfills our long-term strategic goal to expand and solidify our position in this field. The combination of our current capabilities and the expertise of the Shenzhen team will give Sanmina-SCI the strongest optical assembly and test resources of any major EMS company," said Hari Pillai, president and chief operating officer of Sanmina-SCI.
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