Avago Technologies Offers First Complete GPS RF Front End Module With FBAR Filters
CompoundSemi News StaffNovember 26, 2008...Avago Technologies of San Jose, California USA, announced an integrated GPS low noise amplifier (LNA) with what it says are high performance levels. The ALM-1712 integrates a GPS LNA and two FBAR filters. This results in a complete and compact high-performance GPS RF front end module that the company says simplifies the design of a wide range of GPS applications. The ALM-1712 is designed for the 1.575 GHz frequency band, targeting handset GPS, recreational and in-vehicle GPS receiver and GPS antenna applications.
According to Avago, simultaneous GPS, and other location-based GPS services, require high level of receiver sensitivity. Avago's ALM-1712 is reportedly a complete GPS RF front end that the company says delivers very low noise figures, high linearity and superior out-of-band rejection performance. The company says that it integrates a GPS LNA with pre and post high-rejection FBAR (film bulk acoustic resonator) filters to simplify and shortens the RF design process, reduces component count, and provides excellent RF performance levels that are critical in the use of GPS applications.
Company News Release TriAccess Technologies Announces New On-Chip Linearization RFIC Amplifier Solution for CATV Edge QAM
CompoundSemi News StaffNovember 26, 2008...TriAccess Technologies, a provider of CATV FTTH (Fiber-To-The-Home) radio frequency integrated circuits (RFIC) based in Santa Rosa, California USA, launched a new RFIC with on-chip linearization. The company says that the TAT7467, a differential RF amplifier covering the CATV band, delivers improved RF output capability with reduced power consumption. It uses a patent-pending on-chip linearization process for 75-Ohm CATV DOCSIS 3.0 Edge QAM applications. Production shipments are scheduled for end of Q1 2009.
According to Chris Day, President and Chief Technology Officer of TriAccess Technologies, “The TAT7467 has been designed for switched digital video (SDV) and video on demand (VOD) content, allowing customized programming to be switched to different subscribers.” The RFIC is the first to apply on-chip linearization using a single-die GaAs integrated circuit developed specifically for CATV networks." TriAccess says it dramatically lowers heat levels and requires less cooling while maintaining high RF output. Company News Release
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TEL and Edwards to Jointly Develop Abatement Solution for Etch Processes
CompoundSemi News StaffNovember 26, 2008...Edwards of Crawley, West Sussex, UK, reported that it will jointly develop
a perfluorocarbon (PFC) and carbon monoxide gas abatement system with Tokyo Electron Limited (TEL) for etch equipment. The new gas abatement system, the PA-01E, will be available mid-year 2009.
The PA-01E system will help to reduce PFC pollution resulting from the dielectric film etching processes used in semiconductor manufacturing. It will have a plasma abatement device, collectively developed with Adtec Plasma Technology Co., Ltd., Hiroshima , Japan , to offer a high transformation rate and stable operation. It is also designed to have a significantly lower cost-of-ownership due to its reduced requirement for energy, consumables and maintenance.
“We are excited to enter into this joint development agreement with TEL,” said Nigel Hunton, Edwards’ CEO. “The contribution of PFC gases to global warming has been extensively documented, and we look forward to working with TEL’s engineering staff to provide an effective, low cost-of-ownership gas abatement system specifically designed to reduce the dangers of PFC pollution as a result of the semiconductor etch process.”
Edwards News Release
Crystal IS, Inc. Wins $800,000 DOD Grant to Develop UV-LEDs
LIGHTimes StaffNovember 25, 2008...Crystal IS, Inc., a maker of UV LEDs base in Green Island, New York USA, reported that it will receive $800,000 from the Department of Defense to develop large aluminum nitride (AlN) crystals for deep UV LEDs.
Crystal IS says it will partner with the Army Research Laboratory in Adelphi, Maryland and the Electro-Optics Center (EOC) at Penn State University. The project will utilize the recent development of large single-crystal AlN substrates for deep ultraviolet light as well as other high power, high temperature applications of great importance to the military.
The company points out that AlN has been demonstrated to be superior for deep UV light-emitting applications. The primary applications of UV-LEDs are as long-lasting, energy efficient, water and air disinfection devices. Crystal IS Inc is developing its deep UV-LEDs at 265nm, the peak germicidal wavelength.
“Our unique technology allows us to manufacture UV LEDs with unsurpassed performance at truly commercially viable costs,” said Crystal IS CEO Steven Berger. “This grant serves as yet another validation of using AlN-based UV-LEDs to enable cleaner water and air for consumer, industrial and government customers.” Company News Release Content continues for LIGHTimes SecondPage members... Nichia and Sharp Sign LED and Laser Diode Patent Cross-Licensing Agreement
LIGHTimes StaffNovember 24, 2008...Nichia Corporation and Sharp Corporation have entered into a patent cross-licensing agreement covering LEDs (light-emitting diodes) and laser diodes. The agreement allows each company to use the patents related to LEDs and Laser diodes in Japan and other major countries around the world. Nichia points out that it produced the first 1 cd blue LED in 1993 and then produced the first white LED in 1996, which is the combination of a blue LED and a YAG phosphor. Both rely on gallium nitrided technology.
Additionally, the related patents cover blue-violet laser diodes (LDs) which have been used in the increasingly popular Blu-ray disc format. While laser diodes (specifically red) have long been used for CD and DVD playback, it has only been recently that blue-violet LDs have become important in consumer electronics. LEDs have also become ubiquitous in electronics such as backlighting for PDAs, mobile phones, and LCD TVs and displays. In addition, white LEDs have started to be adopted in general lighting applications. The specific patents and terms of the agreement were not disclosed. Nichia notes that it and Sharp will be aiming to create even higher-performance LEDs and laser diodes to respond to expanding market demand. Nichia News Release Emcore Deploys First CPV System in China with the XinAo Group
CompoundSemi News StaffNovember 24, 2008...Emcore Corporation of Albuquerque, New Mexico USA, announced the deployment of a concentrator photovolataics (CPV) system in China with the XinAo Group, one of China's largest energy companies. A 50 kilowatt(kW) test and evaluation system is fully installed and operational as part of an earlier agreement. The system is already producing power in accordance with specifications. Compound semiconductor-based multi-junction solar cells operating at 500x concentration, power the system. Emcore says that it and XinAo continue to have discussions about the possible construction of a joint-owned CPV system manufacturing plant in China. The plant would produce CPV systems designed and certified by Emcore. Dr. John Iannelli, Corporate Chief Technology Officer and General Manager of Emcore's Solar Power Division stated, "We are pleased to introduce the first CPV terrestrial power system in China in partnership with the XinAo Group and look forward to pursuing other solar power opportunities in China's emerging renewable energy market."
In early October, Emcore notes that it was granted access permits for its 850-kW commercial solar park installation in the Extremedora region of Spain. In addition, Emcore expects several other pilot sites to be deployed by the end of the year. Emcore says that it is continuing its investment to develop a next-generation system design with enhanced performance (including a module efficiency of approximately 30%) and much improved cost structure.
According to Emcore, the new design (Generation III) is scheduled to be in volume production by the second half of calendar 2009. Emcore reported that it has recently responded to several requests for proposals from public utility companies using Gen-III products as its baseline. Emcore says it expects to get positive feedback on the proposals before the end of 2008. Emcore News Release Fullspectrum project breaks European CPV Record
CompoundSemi News StaffNovember 24, 2008...Scientists working on the Fullspectrum project have developed photovoltaic (PV) multi-junction (MJ) solar cells which are able to convert 39,7 % of the energy of sun light into electricity.
Fullspectrum is an integrated project involving 19 European public and industrial research centres from seven EU Member States, as well as Russia and Switzerland. Fullspectrum is coordinated by the Universidad Politécnica de Madrid, Instituto de Energía Solar and started in November 2003 with an overall budget of € 14,7 Million of with the European Commission financed € 8.4 Million.
The researchers announced after their final workshop today in El Escorial, Spain, that 39.7 percent is the highest percentage conversion efficiency ever reached in Europe,
The main barrier to large-scale deployment of PV systems is the high production cost of electricity, due to the significant capital investment costs. Research is engaged to reduce manufacturing costs and to raise the efficiency of the cells. The scientists point out that silicon-based conventional PV cells converting only a fraction of the spectrum attaining about 17 percent conversion efficiency.
The project's multi-junction solar cells are reportedly able to catch more sun light energy due to their composition of different materials, including gallium, phosphorus, indium, and germanium. As the researchers point out, multi-junction solar cells are expensive and have been used primarily applications in space. However, concentrating sunlight 100s of times allows significantly reduced cost. The project will look at concentrating sunlight well above 1000 times the natural solar power flux. Fullspectrum News Release Vishay Releases New N-Channel Power MOSFETs
CompoundSemi News StaffNovember 25, 2008...Vishay reports that it added to its family of Gen III TrenchFET power MOSFETs with the release of a new 20-V n-channel device. According to the company, the device offers the industry's lowest on-resistance and on-resistance times gate charge with this voltage rating in the PowerPAK SO-8 package type. The SiR440DP provides a maximum on-resistance of 2.0mΩ at a 4.5-V gate drive and 1.55mΩ at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 87 at 4.5V.
The company contends that these specifications represent an improvement for on-resistance of 23 percent at 4.5V and 22.5 percent at 10V, and a 27 percent lower FOM compared to the closest competing devices optimized for low conduction losses and low switching losses. Vishay says its Siliconix SiR440DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and many systems using point-of-load (POL) power conversion.
Vishay has also released the new 20-V SiR866DP and SiR890DP n-channel power MOSFETs in the PowerPAK SO-8 package type. Respectively they offer on-resistance at 4.5V of 2.5mΩ and 4mΩ, on resistance at 10V of 1.9mΩ and 2.9mΩ, with typical gate charges of 35.3nC and 20nC. Company News Release
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