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Editorial: Aixtron's Doing It Right
... MOCVD reactors are the backbone of today's compound semi industry. Everyone in the CS industry knows that, and Aixtron, one of our industry's two primary MOCVD suppliers (the other being Veeco) lives by it. Aixtron continues to put to work over 20 years of experience weathering the inevitable international...
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NIST Scientists Devise Method for Nanoscale Etching and Imaging with Ion Beams
CompoundSemi News StaffNovember 18, 2008...Researchers at the National Institute of Standards and Technology (NIST) reportedly developed a new method of focusing a stream of ions into a point as small as one nanometer (one billionth of a meter). The approach that they have devised is very versatile and can be used with a wide range of ions tailored to a particular function. In nanotechnology, it is expected to carve smaller features on semiconductors than now are possible. Additionally, it can also produce images of nanoscale structures with finer resolution than currently possible with electron microscopes.
The NIST researchers point out that the current technology for both applications is problematic because the high energies needed to focus gallium for milling tasks end up burying small amounts in the sample and contaminating the material. Additionally, when gallium ions are used to collect images they inadvertently damage the sample because they are relatively heavy. With a different approach, the NIST team created a focused ion beam that generates a small cloud instead of a sharp metal point. They use a combination of magnetic fields and laser light to trap and cool the atoms to very low temperatature. Then another laser ionizes the atoms and focuses them into a small beam of ions. The NIST researchers have called the device Magneto-Optical Trap Ion Source (MOTIS). The initial tests used chromium atoms. The team expects that other atoms could also be used. NIST News Release November 18, 2008...TriQuint Semiconductor of Hillsboro, Oregon and San Diego, California USA, has introduced a new, high power discrete RF transistor family for broadband. The technology dubbed "Powerband", which was unveiled at he MILCOM military communications conference and exhibition at the San Diego Convention Center, can be utilized in radar, signal jammers, and wireless communications.
TriQuint says that while previous broadband solutions traded-off performance to achieve relative wide-band service, its PowerBand technology achieves what it says is unprecedented bandwidth coverage without sacrificing efficiency or other key performance parameters.
“PowerBand changes the wireless equation, creating an opportunity to save a tremendous amount of space, cost and energy. Because PowerBand™ efficiently delivers high power across unprecedented bandwidth, an RF design may require only one transistor line-up2 instead of several.” said TriQuint President and CEO Ralph Quinsey.
“The incredible performance of PowerBand is the first thing that evaluating engineers recognize as truly outstanding,” said Bill McCalpin, PowerBand™ Co-Inventor and General Manager, TriQuint Colorado Design Center. “A traditional high power RF transistor is designed to operate across a narrow frequency range, such as 2.53 - 2.65 GHz. Within that range it delivers power relatively efficiently. But as bandwidth increases, performance falls. PowerBand is totally different in its ability to deliver high power—up to 50Watts2—and high efficiency performance – 50 percent PAE, typical – across a much wider frequency range, from 500 MHz to 3 GHz.” TriQuint News Release Covage Selects Infinera for Nationwide Optical Network in France
CompoundSemi News StaffNovember 18, 2008...Covage, an optical network provider in France, has selected the Infinera DTN optical system for a nationwide network across France to support its wholesale telecom business. The Infinera DTN optical system reportedly offers speed and flexibility fulfilling Covage's mission of bringing greater competition to the French telecom market.
Covage, which is involved in the acquisition, development and operation of "Open Access Next Generation Networks" in France, provides wholesale bandwidth services to telecom operators. Covage is jointly owned by Axia Networks France, a wholly owned subsidiary of Axia NetMedia Corporation, and VINCI Networks, a wholly owned subsidiary of VINCI Construction France. It currently has interests in 12 regional networks and is building a national optical backbone to interconnect its regional networks and offer cost-effective carrier services to its customers nationwide.
Infinera explains that its use of photonic integration enables Covage to put more optical capacity in a smaller footprint than on competitor systems, helping reduce operating expense. Also, Infinera's system allows the separation between the line-side modules and the client-side modules that enables Covage to offer many different services from the same system. Infinera News Release U.S. DOE Awards $1.5 Million to GeneSic to Develop Power Technology for Green Energy Integration into Grid
CompoundSemi News StaffNovember 12, 2008...The US Department of Energy has awarded GeneSiC Semiconductor of Dulles, Virginia USA, two separate grants totaling $1.5 million for the development of high-voltage silicon carbide (SiC) devices to enable wind and solar power integration with the nation's electricity grid. Silicon carbide is semiconductor material that can handle 10x the voltage and 100x the current of silicon. This makes it ideal for high-power applications including: renewable energy (wind and solar) installations and electrical-grid control systems.
The first award is a $750k Phase II Small Business Innovative Research (SBIR) grant for the development of fast, multi-kilovolt SiC gate-turn-off (GTO) power devices that can be used in government and commercial applications such as: power-management and -conditioning systems for ships, the utility industry, and medical imaging. The second is a $750k Phase II Small Business Technology Transfer (STTR) grant for the development of optically gated high-power SiC switches for environments plagued by electro-magnetic interference (EMI).
"These awards demonstrate the DOE's confidence in GeneSiC's capabilities, as well as its commitment to alternative energy solutions," notes Dr. Ranbir Singh, president of GeneSiC. "An integrated, efficient power grid is critical to the nation's energy future -- and the SiC devices we're developing are critical for overcoming the inefficiencies of conventional silicon technologies." GeneSic News Release RFMD Awarded DOD Follow-on Contract; Selected to Support Samsung 3G Platform; Begins Volume Shipment of 2G Transmit Module
CompoundSemi News StaffNovember 12, 2008...RF Micro Devices, Inc., of New York, has signed a 12-month contract with the United States Department of Defense (DOD) valued at $1.4 million for the development of Gallium Nitride (GaN) technology and high-power RF solutions.
Additionally, the company reported that Samsung selected its RF3267 and RF6266 front-ends, for Samsung's multi-band, multimode 3G handsets and smartphones. RFMD News Release. Separately, RFMD announced the release of a 2G transmit module to enhance system-on-a-chip (SoC) RF solutions. RFMD News Release. The company has also made its GaN process technology, fabricated in its high-volume commercial wafer fab available for production designs for a broad range of Aerospace & Defense and commercial applications.
The DOD contract award (#FA8650-05-C-5411) is an extension to previous contracts with the DOD, and it supports of RFMD's ongoing GaN RF power technology project. The goals of the program include: reliability verification, passive element development, and technology qualification of a manufacturable 48V GaN RF power process for amplifiers and switches. Also, the company notes that the current program supports the demonstration of wideband, high power GaN MMIC amplifier and switch circuits targeting L, S, and C-band applications.
The additional funding is to extend the cut-off frequency of RFMD's GaN process up to 90GHz. The company says it expects additional DOD contract awards in calendar year 2009. RFMD News Release Tegal Gets Repeat Order for Plasma Etch System from LED Maker
CompoundSemi News StaffNovember 12, 2008...Tegal Corporation of Petaluma, California USA, reported that it has received a follow-on order for an additional Tegal 901ACS unit from a leading LED maker. Tegal says the LED maker will use the new 901ACS system to help expand capacity for its lighting and optical sensor device production. The additional system adds to the customer’s installed base of Tegal 900ACS Series plasma etch systems now being used for these applications. The Tegal 900ACS Series is optimized for pad, zero layer, non-selective nitride, backside, and planarization etching, as well as for photoresist descum, oxide, nitride, poly, and compound materials applications for HB-LED, Optoelectronic, TFH, and MEMS device fabrication.
“Our customer understands completely that the Tegal 900ACS tool, with its single-wafer etch configuration, brings improved manufacturing precision to the task of fabricating LEDs,” said John Almerico, Marketing Director, Etch Products, Tegal Corporation. “Improved manufacturing precision translates as better process reproducibility, better manufacturing reproducibility, higher device yields, and lower operating costs for the plasma etch applications in our customer’s fabs. That’s an unbeatable value proposition, into which our customer has readily, and repeatedly, bought.”
Tegal News Release Ascent Solar and TurtleEnergy to Collaborate on Development of Building Integrated PV Products
CompoundSemi News StaffNovember 12, 2008...Ascent Solar of Littleton, Colorado USA, a developer of flexible thin-film copper indium gallium diselenide (CIGS) photovoltaic modules, signed a definitive Cooperation Agreement with TurtleEnergy LLC of Linden, New Jersey. The agreement targets the development of new building integrated photovoltaic (BIPV) roofing material products intended for the U.S. marketplace. Ascent Solar indicates that it intends to supply TurtleEnergy with product from its existing 1.5 MW production line during 2009 for TurtleEnergy to develop, test and certify integrated BIPV products. Ascent Solar says it will increase deliveries of solar modules to TurtleEnergy after it expands production capacity. Ascent notes that subsequently the company's will complete demonstration scale projects to validate the system level performance and to boost market demand for the BIPV roofing products.
John Milard, TurtleEnergy founder commented, “Ascent Solar’s flexible, light weight PV modules work well with our solar electric business plans and strategies, continuing our culture of new innovations rooted in an 85 year legacy.”
Joseph McCabe, Ascent Solar’s Vice President of Business Development stated, “We believe TurtleEnergy will be an attractive business partner for photovoltaic product development, with BIPV installation experience in locations that have attractive incentives.” Ascent Solar News Release SolFocus Signs Largest CPV Deal for Europe
CompoundSemi News StaffNovember 10, 2008...SolFocus, a provider of concentrator photovoltaic (CPV) solutions based in Mountain View, California USA, announced the signing of a $103 million (€80M) agreement with EMPE Solar to install over 10 megawatts (MW) of CPV solar in several sites across southern Spain by the end of 2010. SolFocus contends that its CPV systems use high?efficiency PV cells and advanced optics to offer high solar energy yields at competitive costs for commercial, industrial, and utility applications. According to the SolFocus the project will be the largest deployment of CPV technology in Europe. It will reportedly produce enough electricity to meet the energy requirements for a city of approximately 40,000 residents. SolFocus says its systems use low-cost materials such as glass and aluminum, and because of the concentrating effect, they only require 1/1000 the photovoltaic material.
“CPV, with its high energy density and output, is an ideal solution for the Spanish market, providing more clean, reliable energy with a small land footprint and low lifetime cost,” said Gary D. Conley, CEO and Chairman of SolFocus. Inc. “As we continue to drive down costs towards becoming competitive with fossil fuels, sophisticated partners like EMPE Solar will play a critical role in breaking new ground throughout the Mediterranean.”
The latest deal comes after SolFocus recently completed two utility-scale CPV projects for the Institute of Concentration Photovoltaic Systems (ISFOC) in Spain.
SolFocus News Release Raytheon Awards TriQuint 4-Star Supplier Excellence Award
CompoundSemi News StaffNovember 10, 2008...Raytheon Company’s Space and Airborne Systems reportedly recognized TriQuint during its annual Supplier Excellence Awards (SEA) event with a four-star award. Out of fifteen companies recognized, TriQuint was one of only two companies that received the 4-Star award for quality, delivery, performance, and customer satisfaction.
“We’re extremely proud to be recognized by Raytheon Space and Airborne Systems for work on chipsets for phased array radar and other critical programs,” commented Tom Cordner, TriQuint Vice President, who received the award along with Dr. Gailon Brehm, TriQuint’s Military Products Marketing Director.
“Recognition by Raytheon SAS is gratifying because it honors the men and women of TriQuint who consider working in defense and aerospace products a special type of assignment,” remarked Dr. Brehm. “We continually strive to offer our customers the industry’s best power and filter devices through our top-rated foundry, supported by our ISO/AS9100 Approved Quality System."
TriQuint makes integrated circuits for defense and aerospace applications including communications satellites, phased array radar, guidance, control, and related systems. TriQuint’s reportedly has expertise in RF, microwave and millimeter wave power and filter technologies, die-level devices, packaged products, and integrated modules. Additionally the company is also ranked as the largest GaAs foundry service and the defense industry’s leading foundry provider, according to Strategy Analytics’ semiconductor market reports.
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