Ferdinand Braun Institute adds Aixtron multiwafer MOCVD for GaN LEDs
Source/Type: Company News Releases

May 6, 2008... Aachen/Germany--Aixtron AG is pleased to announce an order from the Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) for an AIX 2600G3HT Planetary Reactor system with 8x4 inch capacity.
FBH, located in Berlin, Germany, will use the system to strengthen its research and development activities in GaN based UV- LEDs, laser diodes and GaN HFETs.

Dr. Markus Weyers, Head of the Materials Technology Department, comments: “The FBH has accumulated considerable experience with a wide range of Aixtron MOCVD systems. We already have an AIX 2600G3HT Planetary Reactor system with 8x3 inch and 11x2 inch capacity in operation. I am therefore very confident that we can build on this to quickly and efficiently grow UV-LEDs. The new tool will especially allow us to prepare high temperature AlN thin films with high crystalline quality uniformly and reproducibly. We know that the AIX 2600G3 system is especially suited for the uniform and reliable growth of such challenging semiconductor materials and will make a great contribution to this exciting R&D project.”

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