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Editorial: Widebandgap Electronics - The "Good" Kind of Challenges
... I never know what to say when someone asks a question like, "Is the widebandgap electronics market good or not?" I can say that we expect something between 20% to 50% annual growth for the next few years. I can also say that GaN is finally in a position...
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TSMC Makes Inroads in LED Industry with Investment in BridgeLux
LIGHTimes StaffApril 21, 2008...LED chip maker, BridgeLux, recently reported $30 million dollars in private equity and $10 million in bank lines of credit. Among the investors in the LED chip company is TSMC, Taiwan Semiconductor Manufacturing Company Limited, a dominant supplier of silicon wafers, according to an article in the Taiwan Economic News.
BridgeLux touts its gallium nitride (GaN) capabilities in epitaxial growth, structures, and designs for high power LEDs.
BridgeLux founder and current chief technology officer, Heng Liu, reportedly introduced one of the first GaN metal organic chemical vapor deposition (MOCVD) reactors in the industry. The company expertise also comes from executives who served at two of the biggest LED suppliers, Cree, and Lumileds (Now called Philips Lumileds).
The Taiwan Economic News cited insiders at TSMC who said that the company was bringing old MOCVD equipment back online for LED production. Content continues for LIGHTimes SecondPage members... April 21, 2008...The high performance materials division of Saint-Gobain Group of France, has acquired Lumilog, a developer and producer of gallium nitride (GaN) wafers. Saint Gobain acquired Lumilog from its founders and investors, Banexi Ventures Partners, Emertec Gestion, Sophia Euro Lab SAS and TechFund Capital on April 1, 2008. Terms of the transaction were not disclosed.
The Saint Gobain Group has four business divisions and employs some 200,000 people around the world. GaN is a critical material for Blu-ray laser diodes and advanced LEDs.
Lumilog reported a sales volume of about €2 million (about US $3.2 million) for 2007. Saint Gobain News Release HelioVolt Taps Former DuPont Executive to be CTO
CompoundSemi News StaffApril 21, 2008...Austin, Texas-based thin film solar technology firm, HelioVolt, has hired former DuPont executive, Dr. Louay Eldada as the company’s new chief technology officer (CTO). Dr. Eldada will direct strategic technology planning and development of HelioVolt’s advanced thin film solar energy products in the new position. HelioVolt is commercializing a suite of high performance copper indium gallium selenide (CIGS) photovoltaic products based on the company’s rapid FASST™ manufacturing process. According to HelioVolt, the proprietary process can be used to print high efficiency, low-cost photovoltaic materials for solar panels, integrated systems, and solar-enabled building products including architectural glass, and roofing tiles. HelioVolt says that Dr. Eldada will manage both internal and collaborative technology development in his new position.
For the past five yours Eldada was an executive at Dupont. Prior to that, Dr. Eldada founded and managed Telephotonics Inc., which was later acquired by DuPont. Dr. Eldada also served at Honeywell Inc. (formerly AlliedSignal Inc.) where he started the Telecom Photonics business unit and then directed its R&D branch. Corning Inc. acquired the successful group, and Dr. Eldada continued to manage technical development.
“Renewable energy has been a lifelong passion of mine. I’m looking forward to applying my experience in defining technology roadmaps and achieving those strategic targets to my new role at HelioVolt, a company as dynamic and promising as the growing solar energy market it intends to help reshape,” said Dr. Eldada.
HelioVolt News Release Raytheon Demonstrates Advantages of Gallium Nitride in Radar Components
CompoundSemi News StaffApril 16, 2008...Raytheon of Tewksbury, Massachusetts USA, is developing gallium nitride-based transmit-receive modules for use in future radar upgrades. According to the company, the development is part of an on-going 42-month, $11.5 million Next Generation Transmit Receive Integrated Microwave Module (NGT) contract from the Missile Defense Agency's Advanced Technology Directorate. Raytheon says it is demonstrating that transmit-receive modules using GaN-powered monolithic microwave integrated circuit amplifiers (MMICs). GaN MMICs reportedly have a significant performance advantage in that they provide significantly higher radio frequency power with greater efficiency than current modules, the company said.
The NGT program leverages GaN technology being developed under the Defense Advanced Research Projects Agency's Wide Bandgap Semiconductor program as well as company-funded efforts.
Russell indicated that GaN technology can increase radar ranges, sensitivity, and search capabilities. He also said that the technology enables reduction in the size of the antenna, which improves transportability and reduces acquisition and lifecycle costs without sacrificing performance.
"The NGT program is important because it is the first significant government-funded contract to address the use of the more capable GaN semiconductors in a relevant environment," said Steve Bernstein, IDS' program manager on NGT. "This recent demonstration shows that GaN technology performs better in transmit-receive modules representative of those used in modern radars." Raytheon News Release Skyworks Components in Samsung’s Award-winning FEMTO Cells
CompoundSemi News StaffApril 16, 2008...Samsung recently won two prominent FEMTO cell awards. Skyworks reports that its transceivers, power amplifiers, and low noise amplifiers are in the award winning FEMTO cells. Samsung was awarded the International Consumer Electronics Show (CES) Best of Innovations 2008 in the Wireless Handsets Accessories category for UbiCell, a small, personal base station. UbiCell installs without any technical assistance and works with users’ mobile phones for secure, indoor cellular service over existing broadband networks. The Maeil Business Newspaper, one of the most influential economic daily in Korea, and the Korea Industrial Technology Association (KOITA) , operated by the Korean government, also gave Samsung an award FEMTO cells because of their technological importance, originality, and economic value.
“We want to thank Skyworks for their innovative portfolio of transceivers, power amplifiers and low-noise amplifiers for use in our FEMTO cell applications,” said Oh, Seung Cheol, senior engineer at Samsung. “We rely heavily on their high-quality Linear Products portfolio, and it ultimately contributed to Samsung winning these two prestigious awards.” Skyworks News Release Kopin Extends HBT Purchase and Supply Agreement with Skyworks
CompoundSemi News StaffApril 16, 2008...Kopin Corp. of Taunton, Massachusetts USA, reported that Skyworks Solutions has extended its purchase and supply agreement. Under the agreement, Kopin will supply all 4-inch-diameter and the vast majority of 6-inch-diameter HBT wafer requirements of Skyworks through July 2010. According to Kopin, the agreement applies to a wide range of III-V technologies including multiple GaAs HBT products, Skyworks’ advanced BiFET design and Kopin's GAIN-HBT platform. Kopin noted that the agreement also facilitates the companies’ continued collaboration to improve yields, drive down costs, and expand into new products.
“I am pleased that Skyworks and Kopin will continue to work closely together,” said Bruce Freyman, Skyworks vice president of worldwide operations. “In the past few years, we have been collaborating to improve efficiency, quality and cost, all while implementing promising new technologies. Our efforts have been very successful, and we presented Kopin with our Best Supplier Award last year. It’s important to have a partner such as Kopin that understands our philosophy and is capable of executing the demanding tasks necessary to achieve success in our industry.” Kopin News Release RFMD to Consolidate Production Testing; Begins Production of Microwave and Millimeter Wave Components
CompoundSemi News StaffApril 16, 2008...RF Micro Devices Inc., a radio frequency systems and solutions company based in Greensboro, North Carolina USA, announced it will consolidate its production test facilities for high volume cellular products. The company says it expects the facility shut down will reduce cycle time, better serve its customer base, and improve overall profitability by about $3 to $3.5 million annually. The company also announced that it will add gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) gain blocks and low noise amplifiers (LNAs) targeting the base station, satellite communications, and short-haul wireless infrastructure markets. Company News Release.
RFMD pointed out that the consolidation, which is expected to be completed in the September 2008 quarter, is the final phase of a production test transfer to RFMD's primary production test facility in Beijing, China. High volume cellular product testing will be transfered to the Beijing facility. The company indicated that about 80 of its employees from the facility will be laid off. RFMD currently employs over 2,000 employees in North Carolina. The company indicated that it expects a cash restructuring charge of about $1 million.
Bob Bruggeworth, president and CEO of RFMD, commented, "RFMD's international revenue is over 90% of total revenue, and it is imperative that our supply chain aligns with our customers' manufacturing facilities, which are located primarily in Asia. While this is a difficult decision because of the negative impact on employees, these actions are necessary to better serve our customers, ensure competitiveness and help position RFMD for long-term sustainable profitability." Company News Release Emcore Agrees Acquire Intel’s Enterprise and Storage Optical Assets; Will Supply CPV cells to XinAo Group in China
CompoundSemi News StaffApril 14, 2008...Emcore of Albuquerque, New Mexico USA, announced a definitive agreement to acquire the enterprise and storage assets of Intel’s Optical Platform Division in addition to the Intel Connects Cables business. Emcore also announced an agreement to supply concentrator photovoltaic cells to XinAo Group in China. Emcore said it will issue 3.7 million shares of restricted stock for the acquisition, with certain adjustments based on Emcore's stock price twelve months after the closing of the transaction.
In the Intel deal, Emcore will gain intellectual property, inventory, fixed assets and technology relating to optical transceivers for enterprise and storage customers from Intel. Emcore will also receive optical cable interconnects for high-performance computing clusters. Emcore hopes the acquisition will increase its presence in the optical communications market, especially in the realms of 10 Gigabit Ethernet and storage area network transceivers. Emcore predicts an about $45 million in added revenue over the coming year. Emcore News Release.
Regarding the XinAo deal, Emcore has reported the signing of an agreement with XinAo Group to supply multi-junction CPV systems. Initially, Emcore will deliver a 50 kW, 500x CPV system in Langfang, China to be used for test and evaluation of its reliability and performance. Following that, XinAo says it will install Emcore CPV systems for a major coal gasification project. In addition, the agreement states that XinAo intends to build a CPV system manufacturing plant in China, jointly owned and cerfified by Emcore, to manufacture CPV systems designed and certified by Emcore for the Chinese market. Emcore News Release Ascent Solar Agrees to Help Develop Building Integrated Photovoltaic Roofing Products
CompoundSemi News StaffApril 14, 2008...Ascent Solar of Littleton, Colorado USA, has entered a definitive cooperation agreement with Giscosa Sociedad Limitada of Spain (Giscosa), a distributor and manufacturer of rubber membranes for roofing, reservoirs, and canals. The cooperative agreement is to develop of building integrated photovoltaic (BIPV) roofing products based on Giscosa’s existing RubberSun roofing products. Once developed, the photovoltaic roofing products will be distributed by Giscosa into the European marketplace.
Joseph McCabe, Ascent Solar’s Vice President of Business Development stated, “Ascent Solar is pleased to be working with BIPV innovators like Giscosa, particularly in European markets such as Spain, which we believe currently offer attractive incentives for PV solutions.” Ascent Solar News Release Spectrolab to Provide CPV Systems in Australia
CompoundSemi News StaffApril 14, 2008...Spectrolab of Sylmar, California USA, a wholly owned subsidiary of Boeing, won a third multimillion-dollar contract from Solar Systems Pty. Ltd. for 350 mW of concentrator photovoltaic cell assemblies. The assemblies will reportedly be used in the new 154-megawatt solar power station to be built in the state of Victoria, Australia. The CPV cell assemblies will also be used in other power stations throughout Australia and the United States. Contract details were not disclosed. When added to previous contracts from April and August 2006, the Hawthorn, Victoria-based Solar Systems has ordered 360 megawatts of CPV power from Spectrolab.
"Solar energy is in high demand, and our record-breaking conversion efficiency of over 40 percent is an industry best" said David Lillington, president of Spectrolab. "Our partnership with Solar Systems has resulted in the demonstration of affordable and reliable concentrating solar power systems. Renewable energy is a worldwide priority, and Spectrolab is well positioned to expand its global role in this rapidly expanding industry" Boeing News Release Argonne National Laboratory Researchers Create 'Super Insulator'
CompoundSemi News StaffApril 14, 2008...Researchers at Argonne National Laboratory in Argonne, Illinois USA, discovered that a thin film of titanium nitride cooled to near absolute zero is not a superconductor, a conductor, or a semiconductor, it is a “Super Insulator.” The researchers have suggested that such materials may be used in applications such as: accelerators, magnetic-levitation (maglev) trains, MRI machines, and other specialty circuits, sensors, and battery shields. Argonne senior scientist Valerii Vinokur explained, "If you pass a current through a superconductor, then it will carry the current forever; conversely, if you have a superinsulator, then it will hold a charge forever." Vinokur indicated that if a regular battery is exposed to the air, its power will eventually drain into the air in days or weeks because air is not a perfect insulator.
When cooled titanium nitride’s electrons join together into something called Cooper pairs. In super insulators the Cooper pairs form forming self-locking roadblocks. In superconductors, they form long chains that enable the unrestricted flow of electrons.
"In superinsulators, Cooper pairs avoid each other, creating enormous electric forces that oppose penetration of the current into the material," Vinokur said. "It's exactly the opposite of the superconductor," he added. The researchers findings appear in the April 3, 2008 issue of Nature.Company News Release Our news features are reported
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The
McDonald Report
Commentary & Perspective...
Widebandgap Electronics - The "Good" Kind of Challenges
Guest Editorial by Tom Hausken, Strategies UnlimitedApril 14, 2008...I never know what to say when someone asks a question like, "Is the widebandgap
electronics market good or not?" I can say that we expect something between
20% to 50% annual growth for the next few years. I can also say that GaN is
finally in a position to displace silicon LDMOS, GaAs, and even vacuum tubes
in some applications, and SiC is already selling well into power supplies. But
a "good" market means that it meets or exceeds expectations, and everyone's
expectations are very different.
While there are a lot of nice niches in widebandgap electronics, there won't
be much left if everyone (and there are more) splits up the market evenly. Let's
be frank: our most optimistic scenario estimates that the market may grow to
as much as $300 million by 2012, while competing in a sandbox (an available
market) of about $1 billion. That $300 million is a great niche if you and a
few others share it, but it isn't much if it's divided among 15 or 20 companies.
And keep in mind, that's not even our "most likely" scenario.
But first, let's review what widebandgap electronics can do. They can run faster,
hotter, and at higher voltage and power than other semiconductors. Other technologies
can do any one of these more cost effectively, but GaN and SiC are very good
at doing them all at once. That means they are good for high-speed circuits
and power circuits, or better yet, high-speed power circuits. It also means
improved efficiency, especially when you consider the overall system design.
For example, widebandgap devices can save in cooling, battery power, and allow
more compact and portable systems. So, we can expect to see them in mobile platforms,
hybrid cars, that sort of thing.
For GaN, the hot products are HEMTs; for microwave power amplifiers. Silicon
LDMOS will continue at the lower frequencies, GaAs at lower powers, and vacuum
tubes at the very highest powers and frequencies (and for microwave ovens!).
But GaN is great for new applications like WiMAX base stations, especially since
these new technologies not only use higher carrier frequencies (where silicon
is at a disadvantage), but also wider signal bandwidths. To send that much information
over a wide area, you need an efficient and linear amplifier. GaN (and to some
extent SiC) does that well.
For SiC, the hot products are Schottky diodes for power supplies and other
power circuits. It's been more difficult to commercialize FETs and bipolar transistors,
but there is now some progress there too. With increasing regulatory pressures
to make electronics and motors more efficient, and the soaring price of energy,
the timing is perfect for SiC (and to some extent GaN) power devices.
Opportunities are not without challenges, though, and there are plenty of those
too. As always, a lot depends on unit prices, but prices depend greatly on having
good manufacturing yields on 4-inch and even perhaps 6-inch wafers, whether
the wafer material is SiC, Si, sapphire, or native GaN. In the case of GaN substrates
and epi layers, the defect density is still a challenge. Great progress has
been made, but there is more to go.
There is much more to electronics than just the chip. Packages must be improved
to match the materials. Circuits must be rejiggered to match the new devices.
And while microwave circuit design is complex and time-consuming, the price
pressure in power supply design is punishing. There is also uncertainty in the end-user demand. Wireless technologies are
notoriously prone to risk. WiMAX is a case in point. When will it finally take
off? There are several WiMAX technologies, and there are other wireless technologies
vying for the same application. Even in the slower-moving power components business, silicon is still moving
forward after all these years. For example, a start-up called Q-Speed aims to
do what SiC can do, but in silicon. That is, its "soft recovery" diodes
that are faster than conventional ultrafast diodes, and almost as fast as SiC
Schottky diodes. And so far its diodes can go to 600 V reverse voltage, which
extends beyond the range of silicon Schottky diodes (but not as high as SiC).
Of course, there are also the competitors. We group them into four categories.
For the GaAs foundries like Eudyna, Oki, RFMD, Toshiba, and Triquint, working
on GaN is a no-brainer. They already understand microwave markets, and they
are paying for their III-V foundries with their GaAs products. For military
contractors like HRL, Northrop Grumman, and Raytheon, working on GaN is also
an obvious choice, since they need the new technology for their high-margin
customers. Cree, Nitronex, and Velox Semiconductor are using their advantage
in materials expertise. Moreover, Cree can pay for much of its electronics manufacturing
with its LED foundry. Finally, power electronics powerhouses like Infineon,
STMicrolectronics, and others can leverage their ties to demanding customers
(such as the automotive industry) to make and sell SiC diodes and transistors.
All said, the growth rates are very attractive and the timing is finally right.
And very importantly, the challenges facing widebandgap electronics suppliers
are not only the usual kind, but they are the kind you want: the "good"
kind.
Tom Hausken is the Director, Components Practice for Strategies Unlimited.
Dr. Hausken has over 25 years in the semiconductor and optoelectronics industries,
spanning device and materials research, product development, laboratory management,
and technology and market analysis. He has been with Strategies since 1999 and
holds a B.S.E.E.from Montana State University and a Ph.D. from the University
of California, Santa Barbara. For more market details and projections, check
into Strategies Unlimited's recently released report, Wide
Band Gap Electronics: Technology Trends and Market Forecasts - 2008. If you have questions about the
solid state lighting and compound semiconductor industries or have news
or views to share, I'm Jo Ann McDonald, Editor of LIGHTimes and CompoundSemi News.
Feel free to contact me directly, anytime. 
My direct tel at the ranch is
+1-325-463-5345
From time to time Jo Ann may comment on companies in which she holds a
modest investment - be sure to read
her disclosure at some point in time... |
