Source/Type: CompoundSemi Online -- Compound Semiconductor Supply Chain News - Reported News

TDI Begins Production of 3-Inch GaN Epi Products
Author: CompoundSemi News Staff

April 9, 2008... Technologies and Devices International Inc. (TDI), a developer and supplier of compound nitride semiconductor materials, announced that it began production of its 3-inch 20-130 Micron thick GaN wafers. TDI uses its patented hydride vapor phase epitaxial (HVPE) process and multi-wafer equipment at the company's facility in Silver Spring, Maryland facility. The GaN wafers consist of a 20-130 micron thick GaN layer deposited on (0001) c-plane 3-inch sapphire substrates. TDI points out that new product broadens its family of GaN, AlN, AlGaN, InN, and InGaN templates manufactured on 2-inch Sapphire and AlN templates on 2-, 3-, 4-inch SiC. These thick GaN templates are targeted for applications such as quasi-bulk low-defect GaN substrates for MOCVD, MBE homoepitaxial growth of advanced blue, green and white GaN-based light emitting diodes (LEDs) as well as laser diodes. The company contends that use of the wafer lowers the cost of epitaxy, substantially simplifies the growth process, and improves final device performance.

"There is a clear trend in the industry to develop and commercialize GaN-based devices on larger substrates. TDI 's customers are rapidly moving from the industry standard 2-inch epitaxial wafer used for fabrication of light emitters, to 3-inch wafers," said Alexander Usikov, TDI's Technical Director. “This production breakthrough of large area low-cost GaN wafers will benefit our customers in terms of higher device throughput, improved material yields and reduced production costs," he added. Company News Release

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